Diodes DSS4160V User Manual

θ

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Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available (DSS5160V)

• Low Collector-Emitter Saturation Voltage, V

• Surface Mount Package Suited for Automated Assembly

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 1)

• "Green Device" (Note 2)

NEW PRODUCT

Maximum Ratings @T

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Base Current (DC) Peak Base Current

Top View

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

LOW V

NPN SURFACE MOUNT TRANSISTOR

CE(SAT)

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, “Green” Molding Compound. UL

CE(SAT)

Bottom View Device Schematic Pin Out Configuration

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.003 grams (approximate)

654

123

80 V 60 V

5 V 1 A 2 A

300 mA

1 A

3

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

I

BM

1, 2, 5, 6

4

DSS4160V

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ TA = 25°C PD Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

DSS4160V

Document number: DS31671 Rev. 2 - 2

2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_fre e/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

T

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600 mW

R

JA

, T

J

STG

208

-55 to +150

°C/W

°C

March 2009

(BR)

)

r

P, P

OWER

PATIO

N

C

O

CTO

R

C

U

R

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage

Collector Cutoff Current

V V V

I

Collector Cutoff Current Emitter Cutoff Current

I

ON CHARACTERISTICS (Note 4)

DC Current Gain

Collector-Emitter Saturation Voltage

Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage

SMALL SIGNAL CHARACTERISTICS

NEW PRODUCT

Output Capacitance

V

CE(SAT)

R

CE(SAT

V

BE(SAT

V

BE(ON

C

Current Gain-Bandwidth Product

SWITCHING CHARACTERISTICS

Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time

Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

600

80

CBO

I

CES EBO

CBO CEO EBO

60

5

⎯ ⎯ ⎯ ⎯

⎯ ⎯

250

h

FE

200 100

⎯ ⎯

⎯ ⎯ ⎯

⎯ ⎯

obo

f

T

t

on

t

d

t

off

t

⎯

s

t

⎯

f

150

⎯

⎯ ⎯

⎯

⎯ ⎯ ⎯ ⎯ ⎯ ⎯

⎯ ⎯

⎯

⎯ ⎯ ⎯

⎯ ⎯

68 31

37 430 383

47

10

V

IC = 100μA, IE = 0

V

IC = 10mA, IB = 0

V

IE = 100μA, IC = 0

nA

100

50 100 nA 100 nA

⎯ ⎯

⎯

110 140 250

250 mΩ

1.1 V

0.9 V

10 pF

⎯ ⎯ ⎯ ⎯ ⎯ ⎯

VCB = 60V, IE = 0

μA

V VCE = 60V, VBE = 0 V

V V

⎯

V I

mV

I I IC = 1A, IB = 100mA IC = 1A, IB = 50mA V

VCB = 10V, f = 1.0MHz

MHz

VCE = 10V, IC = 50mA, f = 100MHz

ns ns ns

V

ns

I ns ns

DSS4160V

= 60V, IE = 0, TA = 150°C

CB

= 5V, IC = 0

EB

= 5V, IC = 1mA

CE

= 5V, IC = 500mA

CE

= 5V, IC = 1A

CE

= 100mA, IB = 1mA

C

= 500mA, IB = 50mA

C

= 1A, IB = 100mA

C

= 5V, IC = 1A

CE

= 10V

CC

= 0.5A, IB1 = IB2 = 25mA

C

500

(A)

(mW)

400

300

DISSI

200

D

100

R = 208°C/W

θ

JA

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75 100 125

150

Fig. 1 Power Dissipation vs.

Ambient Tem perature ( No te 3)

DSS4160V

Document number: DS31671 Rev. 2 - 2

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1

EN

0.1

Pw = 100ms

DC

LLE

0.01

C

I,

0.001

0.1 1 10 100 V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage (Note 3)

Pw = 10ms

Pw = 1ms

March 2009

C CUR

REN

T G

N

C

O

C

T

O

R

T

TER

T

TER TURN-O

OLTAG

T

TER

TURATIO

N VOLTAG

C

PACITANC

F

1,000

V = 5V

CE

AI

800

T = 150°C

A

T = 85°C

A

600

T = 25°C

A

400

FE

h, D

T = -55°C

A

200

-EMI

VOLTAGE (V)

LLE

0.01

SATURATION

CE(SAT)

V,

0.1

1

I/I = 10

CB

T = 150°C

A

T = 85°C

A

T = -55°C

A

T = 25°C

A

DSS4160V

NEW PRODUCT

0

1 10 100 10,000

I , COLLECTOR CURRENT (mA)

Fig. 3 Typical DC Current Gain vs. Collector Current

C

1,000

1.2

E (V)

N V

1.0

0.8

V = 5V

CE

T = -55°C

A

0.6

T = 25°C

A

0.4

T = 85°C

A

0.2

T = 150°C

A

BE(ON)

0

V , BASE-EMI

0.1 10 100 1,000 10,000

1

I , COLLECTOR CURRENT (mA)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

200

0.001

0.1 1,000

1 10 100 10,000

I , COLLECTOR CURRENT (mA)

Fig. 4 Typical Collector-Emitter Saturation Voltage

C

vs. Collector Current

1.2

E (V)

1.0

I = 10

/I

CB

0.8

T = -55°C

A

0.6

T = 25°C

SA

0.4

0.2

A

T = 85°C

A

T = 150°C

A

0

0.1 10 100 10,000

BE(SAT)

V , BASE-EMI

11,000

I , COLLECTOR CURRENT (mA)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Curr ent

160

f = 1MHz

)

E (p

120

80

A

C

ibo

40

C

0

obo

0.1 1 10 100 V , REVERSE VOLTAGE (V)

R

Fig. 7 Typical Capa citance Characte r is ti cs

DSS4160V

Document number: DS31671 Rev. 2 - 2

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March 2009

T

R

T T

HER

R

TANC

Y

1

E

ESIS

MAL

ANSIEN

r(t),

0.1

0.01

D = 0.7 D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , PULSE DURATION TIME (s)

1

Fig. 8 Transi ent Thermal Respo nse (Note 3)

NEW PRODUCT

Ordering Information (Note 5)

Part Number Case Packaging

DSS4160V-7 SOT-563 3000/Tape & Reel

Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

R (t) = r(t) *

θ

JA

R = 178°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

DSS4160V

R

θθJA

10,0001,000

Marking Information

ZN9

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ZN9 = Product Type Marking Code YM = Date Code Marking

M

Y = Year (ex: V = 2008) M = Month (ex: 9 = September)

Package Outline Dimensions

K

DSS4160V

Document number: DS31671 Rev. 2 - 2

A

SOT-563

B

C

Dim Min Max Typ

A 0.15 0.30 0.20 B 1.10 1.25 1.20

D

G

C 1.55 1.70 1.60 D - - 0.50

G 0.90 1.10 1.00

H 1.50 1.70 1.60 K 0.55 0.60 0.60

M

L 0.10 0.30 0.20

M 0.10 0.18 0.11

All Dimensions in mm

H

L

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March 2009

DSS4160V

Suggested Pad Layout

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,

NEW PRODUCT

harmless against all damages. Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written

approval of the President of Diodes Incorporated.

G

Z

Y

X

C2

C1

IMPORTANT NOTICE

LIFE SUPPORT

Dimensions Value (in mm)

Z 2.2 G 1.2 X 0.375

Y 0.5 C1 1.7 C2 0.5

DSS4160V

Document number: DS31671 Rev. 2 - 2

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March 2009