Diodes DSS4160V User Manual
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Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DSS5160V)
• Low Collector-Emitter Saturation Voltage, V
• Surface Mount Package Suited for Automated Assembly
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
NEW PRODUCT
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
Top View
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
LOW V
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound. UL
CE(SAT)
Bottom View Device Schematic Pin Out Configuration
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.003 grams (approximate)
654
123
80 V
60 V
5 V
1 A
2 A
300 mA
1 A
3
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
1, 2, 5, 6
4
DSS4160V
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DSS4160V
Document number: DS31671 Rev. 2 - 2
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_fre e/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
T
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600 mW
R
JA
, T
J
STG
208
-55 to +150
°C/W
°C
March 2009
© Diodes Incorporated
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P, P
OWER
PATIO
N
C
O
CTO
R
C
U
R
R
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
V
V
V
I
Collector Cutoff Current
Emitter Cutoff Current
I
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
NEW PRODUCT
Output Capacitance
V
CE(SAT)
R
CE(SAT
V
BE(SAT
V
BE(ON
C
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
600
80
CBO
I
CES
EBO
CBO
CEO
EBO
60
5
⎯ ⎯
⎯ ⎯
⎯ ⎯
250
h
FE
200
100
⎯ ⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
obo
f
T
t
on
t
d
t
t
off
t
⎯
s
t
⎯
f
150
⎯
⎯
⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯ ⎯
68
31
37
430
383
47
10
V
IC = 100μA, IE = 0
V
IC = 10mA, IB = 0
V
IE = 100μA, IC = 0
nA
100
50
100 nA
100 nA
⎯
⎯
⎯
110
140
250
250 mΩ
1.1 V
0.9 V
10 pF
⎯
⎯
⎯
⎯
⎯
⎯
VCB = 60V, IE = 0
μA
V
VCE = 60V, VBE = 0
V
V
V
⎯
V
I
mV
I
I
IC = 1A, IB = 100mA
IC = 1A, IB = 50mA
V
VCB = 10V, f = 1.0MHz
MHz
VCE = 10V, IC = 50mA, f = 100MHz
ns
ns
ns
V
ns
I
ns
ns
DSS4160V
= 60V, IE = 0, TA = 150°C
CB
= 5V, IC = 0
EB
= 5V, IC = 1mA
CE
= 5V, IC = 500mA
CE
= 5V, IC = 1A
CE
= 100mA, IB = 1mA
C
= 500mA, IB = 50mA
C
= 1A, IB = 100mA
C
= 5V, IC = 1A
CE
= 10V
CC
= 0.5A, IB1 = IB2 = 25mA
C
500
(A)
(mW)
400
300
DISSI
200
D
100
R = 208°C/W
θ
JA
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
150
Fig. 1 Power Dissipation vs.
Ambient Tem perature ( No te 3)
DSS4160V
Document number: DS31671 Rev. 2 - 2
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1
EN
0.1
Pw = 100ms
DC
LLE
0.01
C
I,
0.001
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
Pw = 10ms
© Diodes Incorporated
Pw = 1ms
March 2009
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