Diodes DSS4160U User Manual

θ

Features

• Epitaxial Planar Die Construction

• Low Collector-Emitter Saturation Voltage, V

• Complementary PNP Type Available (DSS5160U)

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green Device" (Note 2)

NEW PRODUCT

Maximum Ratings @T

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Base Current (DC) Peak Base Current

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

CE(SAT)

Top View

DSS4160U

LOW V

NPN SURFACE MOUNT TRANSISTOR

CE(SAT)

Mechanical Data

• Case: SOT-323

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Copper Plated

Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.006 grams (approximate)

C

B

Device Schematic

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

I

BM

E

80 V 60 V

5 V 1 A 2 A

300 mA

1 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ TA = 25°C PD Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

DSS4160U

Document number: DS31684 Rev. 2 - 2

2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

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R

JA

T

, T

J

STG

400 mW 313

-55 to +150

°C/W

°C

March 2009

(BR)

)

r

P, P

O

R

PAT

O

N

C

O

CTO

R

C

U

R

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage

Collector Cutoff Current

V V V

I

Collector Cutoff Current Emitter Cutoff Current

I

ON CHARACTERISTICS (Note 4)

DC Current Gain

Collector-Emitter Saturation Voltage

V

CE(SAT)

NEW PRODUCT

Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance Current Gain-Bandwidth Product

SWITCHING CHARACTERISTICS

Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time

Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

600

R

CE(SAT

V

BE(SAT

V

BE(ON

C

80

CBO

I

CES

EBO

CBO

CEO

EBO

60

5

⎯ ⎯

250

h

FE

200 100

⎯ ⎯

⎯ ⎯ ⎯

⎯ ⎯

obo

f

T

t

on

t

d

t

off

t

⎯

s

t

⎯

f

150

⎯

⎯ ⎯

⎯

⎯ ⎯ ⎯ ⎯ ⎯ ⎯

⎯ ⎯ ⎯

⎯ ⎯

63 33

30 420 380

40

10

V

IC = 100μA, IE = 0

V

IC = 10mA, IB = 0

V

IE = 100μA, IC = 0

nA

100

50 100 nA 100 nA

⎯ ⎯ ⎯

115 150 280

280 mΩ

1.1 V

0.9 V

10 pF

⎯ ⎯ ⎯ ⎯ ⎯ ⎯

VCB = 60V, IE = 0

μA

V VCE = 60V, VBE = 0 V

V V

⎯

V I

mV

I I IC = 1A, IB = 100mA IC = 1A, IB = 50mA V

VCB = 10V, f = 1.0MHz

MHz

VCE = 10V, IC = 50mA, f = 100MHz

ns ns ns

V

ns

I ns ns

DSS4160U

= 60V, IE = 0, TA = 150°C

CB

= 5V, IC = 0

EB

= 5V, IC = 1mA

CE

= 5V, IC = 500mA

CE

= 5V, IC = 1A

CE

= 100mA, IB = 1mA

C

= 500mA, IB = 50mA

C

= 1A, IB = 100mA

C

= 5V, IC = 1A

CE

= 10V

CC

= 0.5A, IB1 = IB2 = 25mA

C

Pw = 1ms

Pw = 10ms

(mW)

I

DISSI

WE

D

500

400

300

200

100

0

R = 313°C/W

θ

JA

25 50

T , AMBIENT TEMPERATURE (°C)

A

75 100 125

Fig. 1 Power Dissipation vs.

Ambient Temperature (Note 3)

150

(A)

1

EN

0.1

Pw = 100ms

DC

LLE

0.01

C

I,

0.001

0.1 1 10 100 V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage (Note 3)

DSS4160U

Document number: DS31684 Rev. 2 - 2

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March 2009

C CUR

REN

T

G

N

C

O

CTO

R

T

R

T

TER TUR

N-O

N VOLTAG

T

TER

TURATIO

N VOLTAG

CAPACIT

N

C

NEW PRODUCT

DSS4160U

E

-EMI

VOLTAGE (V)

LLE

0.01

SATURATION

CE(SAT)

V,

0.001

1.2

E (V)

1.0

1

I/I = 10

CB

0.1

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.1 1,000

1 10 100 10,000

I , COLLECTOR CURRENT (mA)

Fig. 4 Typical Collector-Emitter Saturation Voltage

C

vs. Collector Current

I = 10

/I

CB

1,000

T = 150°C

800

A

AI

600

T = 85°C

A

400

FE

h, D

200

T = 25°C

A

T = -55°C

A

0

1 10 100 10,000

I , COLLECTOR CURRENT (mA)

Fig. 3 Typical DC Current Gain vs. Collector Current

C

1,000

1.2

E (V)

V = 5V

CE

1.0

V = 5V

CE

0.8

T = -55°C

A

0.6

T = 25°C

A

0.4

T = 85°C

A

0.2

T = 150°C

A

BE(ON)

0

V , BASE-EMI

0.1 10 100 1,000 10,000

1

I , COLLECTOR CURRENT (mA)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

180

150

f = 1MHz

120

E (pF)

A

90

C

ibo

60

0.8

T = -55°C

A

0.6

T = 25°C

SA

0.4

0.2

A

T = 85°C

A

T = 150°C

A

0

0.1 10 100 10,000

BE(SAT)

V , BASE-EMI

11,000

I , COLLECTOR CURRENT (mA)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

30

C

0

obo

0.1 1 10 100 V , REVERSE VOLTAGE (V)

R

Fig. 7 Typical Capacitance Characteristics

DSS4160U

Document number: DS31684 Rev. 2 - 2

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March 2009

T

R

T

HER

R

TANC

1

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

0.01

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , PULSE DURATION TIME (s)

1

NEW PRODUCT

E

ESIS

MAL

ANSIEN

r(t),

0.001

Fig. 8 Transient Thermal Response (Note 3)

Ordering Information (Note 5)

Part Number Case Packaging

DSS4160U-7 SOT-323 3000/Tape & Reel

Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

R (t) = r(t) *

θ

JA

R = 310°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

DSS4160U

R

θθJA

10,0001,000

Marking Information

ZN9

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ZN9 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008)

YM

M = Month (ex: 9 = September)

Package Outline Dimensions

K

J

DSS4160U

Document number: DS31684 Rev. 2 - 2

A

SOT-323

Dim Min Max Typ

C

B

A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10

G

H

M

D - - 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30

D

L

M 0.10 0.18 0.11

0° 8° -

α

All Dimensions in mm

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March 2009

DSS4160U

Suggested Pad Layout

NEW PRODUCT

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.

Y

Z

X

E

C

IMPORTANT NOTICE

LIFE SUPPORT

Dimensions Value (in mm)

Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0

DSS4160U

Document number: DS31684 Rev. 2 - 2

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March 2009

Diodes DSS4160U User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual