DSS4160DS
60V DUAL NPN LOW SATURATION TRANSISTOR IN SOT26
Features
BV
I
I
R
Low Saturation Voltage V
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
> 60V
CEO
= 1A high Continuous Collector Current
C
= 2A Peak Pulse Current
CM
= 100mΩ for a Low Equivalent On-Resistance
CE(sat)
< 250mV @ 1A
CE(sat)
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.015 grams (approximate)
SOT26
Top View
B1
C1
E1
Device Symbol
B2
C2
E2
E1
B1
C2
C1
B2
E2
Top View
Pin-Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS4160DS-7 ZN9 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green”
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2013 2014 2015 2016 2017 2018 2019 2020
Code A B C D E F G H
Month Jan Feb Mar Apr May Jun Jul
Code 1 2 3 4 5 6 7
ZN9 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: A = 2013
M = Month ex: 9 = September
Aug Sep Oct Nov Dec
8 9 O N D
DSS4160DS
Document number DS36556 Rev. 1 – 2
1 of 7
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November 2013
© Diodes Incorporated
Absolute Maximum Ratings – Q1 & Q2 Common (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
V
CBO
V
CEO
V
EBO
I
I
CM
Base current
Peak Pulse Base current
I
BM
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
(Notes 5 & 9)
(Notes 6 & 9)
Power Dissipation
Linear Derating Factor
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 8 & 9)
(Notes 5 & 9)
(Notes 6 & 9) 139
Thermal Resistance, Junction to Ambient
(Notes 6 & 10) 113
(Notes 7 & 9) 113
(Notes 8 & 9) 73
Thermal Resistance, Junction to Lead (Note 11)
Operating and Storage Temperature Range
ESD Ratings (Note 12)
= +25°C, unless otherwise specified.)
A
C
I
B
80 V
60 V
5 V
1 A
2 A
300 mA
1 A
0.7
5.6
0.9
7.2
P
D
1.1
8.8
1.1
8.8
1.7
13.6
179
R
JA
R
JL
T
, T
J
STG
96
-55 to +150
DSS4160DS
W
mW/C
C/W
C
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except the device is mounted on 50mm x 50mm 2oz copper.
8. Same as note (7), except the device is measured at t < 5 seconds.
9. One active die operating with the collector attached to the heatsink.
10. Two active dice running at equal power with heatsink split 50% to each collector.
11. Thermal resistance from junction to solder-point (at the end of the collector lead).
12. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS4160DS
Document number DS36556 Rev. 1 – 2
2 of 7
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November 2013
© Diodes Incorporated
Thermal Characteristics and Derating Information
V
CE(sat)
Limit
1
DC
1s
amb
=25°C
100ms
10ms
1ms
100m
T
25mm x 25mm
Collector Current (A)
C
I
10m
1oz FR4
100m 1 10
VCE Collector-Emitter Voltage (V)
Safe Operating Area
140
T
=25°C
120
100
80
amb
25mm x 25mm
1oz FR4
D=0.5
60
Single Pulse
40
D=0.2
20
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pulse Width (s)
D=0.05
D=0.1
120
100
80
60
40
20
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Transient Thermal Impedance
DSS4160DS
100µs
T
=25°C
amb
50mm x 50mm
2oz FR4
D=0.5
Single Pulse
D=0.2
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
2.0
100
Single Pulse
T
=25°C
amb
1.5
10
50mm x 50mm
2oz FR4
1
25mm x 25mm
1oz FR4
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissipation (W)
Pulse Width (s)
1.0
0.5
0.0
Max Power Dissipation (W)
Pulse Power Dissipation
DSS4160DS
Document number DS36556 Rev. 1 – 2
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50mm x 50mm 2oz FR4
One active die t<5secs
25mm x 25mm 1oz FR4
Two active die
50mm x 50mm 2oz FR4
One active die
25mm x 25mm 1oz FR4
one active die
15mm x 15mm 1oz FR4
one active die
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
November 2013
© Diodes Incorporated
)
)
)
r
Electrical Characteristics - Q1 & Q2 common (@T
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 13)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
250
DC Current Gain (Note 13)
Collector-Emitter Saturation Voltage (Note 13)
Equivalent On-Resistance
Base-Emitter Saturation Voltage (Note 13)
Base-Emitter Turn-On Voltage (Note 13)
Output Capacitance
Transition Frequency
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 13. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
h
FE
V
CE(sat)
R
CE(sat
V
BE(sat
V
BE(on
C
obo
f
T
t
on
t
d
t
t
off
t
s
t
f
200
100
150 220
= +25°C, unless otherwise specified.)
80
60
5
380
420
380
60
70
100
100 250 mΩ
940 1100 mV
780 900 mV
5.5 10 pF
63
33
30
420
380
40
100 nA
50 µA
100 nA
100 nA
110
140
250
V
IC = 100µA
V
IC = 10mA
V
IE = 100µA
V
V
V
V
I
C
I
mV
C
I
C
I
C
I
C
I
C
IC = 1A, IB = 100mA
IC = 1A, IB = 50mA
IC = 1A, V
V
V
MHz
f = 100MHz
ns
ns
ns
V
ns
I
B1
ns
ns
DSS4160DS
= 60V, IE = 0A
CB
= 60V, IE = 0A, TJ = +150°C
CB
= 60V, VBE= 0V
CES
= 5V, IC = 0A
EB
= 1mA, V
= 500mA, V
= 1A, V
= 100mA, IB = 1mA
= 500mA, IB = 50mA
= 1A, IB = 100mA
= 10V, f = 1MHz
CB
= 10V, IC = 50mA
CE
= 10V, IC = 0.5A
CC
= -IB2 = 25mA
CE
CE
CE
= 5V
= 5V
= 5V
CE
= 5V
DSS4160DS
Document number DS36556 Rev. 1 – 2
4 of 7
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November 2013
© Diodes Incorporated
D
C CUR
REN
T GAIN
C
O
CTO
R
T
TER
T
TER TUR
N-O
N VOLTAG
MIT
TER
TURATIO
N VOLTAG
C
P
CITANC
Typical Electrical Characteristics (@T
1,000
V = 5V
T = 150°C
800
A
600
T = 85°C
A
h,
400
FE
200
T = 25°C
A
T = -55°C
A
0
1 10 100 10,000
I , COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
C
1.2
E (V)
V = 5V
CE
1.0
CE
1,000
= +25°C, unless otherwise specified.)
A
1
0.1
I/I = 10
CB
-EMI
VOLTAGE (V)
LLE
0.01
SATURATION
CE(SAT)
V,
0.001
0.1 1,000
1 10 100 10,000
Fig. 6 Typical Collector-Emitter Saturation Voltage
1.2
I = 10
E (V)
/I
CB
1.0
DSS4160DS
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , COLLECTOR CURRENT (mA)
C
vs. Collector Current
0.8
T = -55°C
A
0.6
T = 25°C
A
0.4
T = 85°C
A
0.2
T = 150°C
A
BE(ON)
0
V , BASE-EMI
0.1 10 100 1,000 10,000
1
I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
180
150
f = 1MHz
120
E (pF)
90
A
A
60
C
ibo
0.8
T = -55°C
A
0.6
T = 25°C
SA
0.4
0.2
A
T = 85°C
A
T = 150°C
A
0
0.1 10 100 10,000
BE(SAT)
V, BASE-E
11,000
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
30
C
0
obo
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 9 Typical Capacitance Characteristics
DSS4160DS
Document number DS36556 Rev. 1 – 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
K
J
A
Dim Min Max Typ
B C
H
M
D
L
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
G
Z
Y
X
C2
C2
C1
Dimensions Value (in mm)
Z 3.20
G 1.60
X 0.55
Y 0.80
C1 2.40
C2 0.95
SOT26
0° 8°
DSS4160DS
0.95
DSS4160DS
Document number DS36556 Rev. 1 – 2
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© Diodes Incorporated
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
DSS4160DS
DSS4160DS
Document number DS36556 Rev. 1 – 2
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