Diodes DSS4160DS User Manual

DSS4160DS

60V DUAL NPN LOW SATURATION TRANSISTOR IN SOT26

Features

 BV

 I

 I

 R

 Low Saturation Voltage V

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

> 60V

CEO

= 1A high Continuous Collector Current

C

= 2A Peak Pulse Current

CM

= 100mΩ for a Low Equivalent On-Resistance

CE(sat)

< 250mV @ 1A

CE(sat)

Mechanical Data

 Case: SOT26

 Case Material: Molded Plastic, “Green” Molding Compound

 UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

 Weight: 0.015 grams (approximate)

SOT26

Top View

B1

C1

E1

Device Symbol

B2

C2

E2

E1

B1

C2

C1

B2

E2

Top View

Pin-Out

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DSS4160DS-7 ZN9 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green”
and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2013 2014 2015 2016 2017 2018 2019 2020

Code A B C D E F G H

Month Jan Feb Mar Apr May Jun Jul

Code 1 2 3 4 5 6 7

ZN9 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: A = 2013
M = Month ex: 9 = September

Aug Sep Oct Nov Dec

8 9 O N D

DSS4160DS

Document number DS36556 Rev. 1 – 2

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November 2013

© Diodes Incorporated



Absolute Maximum Ratings – Q1 & Q2 Common (@T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current

V

CBO

V

CEO

V

EBO

I

I

CM

Base current
Peak Pulse Base current

I

BM

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

(Notes 5 & 9)

(Notes 6 & 9)

Power Dissipation
Linear Derating Factor

(Notes 6 & 10)

(Notes 7 & 9)

(Notes 8 & 9)

(Notes 5 & 9)
(Notes 6 & 9) 139

Thermal Resistance, Junction to Ambient

(Notes 6 & 10) 113
(Notes 7 & 9) 113

(Notes 8 & 9) 73
Thermal Resistance, Junction to Lead (Note 11)
Operating and Storage Temperature Range

ESD Ratings (Note 12)

= +25°C, unless otherwise specified.)

A

C

I

B

80 V
60 V

5 V
1 A
2 A

300 mA

1 A

0.7

5.6

0.9

7.2

P

D

1.1

8.8

1.1

8.8

1.7

13.6
179

R

JA



R

JL

T

, T

J

STG

96

-55 to +150

DSS4160DS

W

mW/C

C/W

C

Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Machine Model ESD MM 400 V C

Notes: 5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air

conditions whilst operating in a steady-state.

6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper.

7. Same as note (5), except the device is mounted on 50mm x 50mm 2oz copper.

8. Same as note (7), except the device is measured at t < 5 seconds.

9. One active die operating with the collector attached to the heatsink.

10. Two active dice running at equal power with heatsink split 50% to each collector.

11. Thermal resistance from junction to solder-point (at the end of the collector lead).

12. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

DSS4160DS

Document number DS36556 Rev. 1 – 2

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www.diodes.com

November 2013

© Diodes Incorporated

Thermal Characteristics and Derating Information

V

CE(sat)

Limit

1

DC

1s

amb

=25°C

100ms

10ms

1ms

100m

T

25mm x 25mm

Collector Current (A)

C

I

10m

1oz FR4

100m 1 10

VCE Collector-Emitter Voltage (V)

Safe Operating Area

140

T

=25°C

120

100

80

amb

25mm x 25mm

1oz FR4

D=0.5

60

Single Pulse

40

D=0.2

20

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

D=0.05

D=0.1

120

100

80

60

40

20

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Transient Thermal Impedance

DSS4160DS

100µs

T

=25°C

amb

50mm x 50mm

2oz FR4

D=0.5

Single Pulse

D=0.2

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

2.0

100

Single Pulse

T

=25°C

amb

1.5

10

50mm x 50mm

2oz FR4

1

25mm x 25mm

1oz FR4

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipation (W)

Pulse Width (s)

1.0

0.5

0.0

Max Power Dissipation (W)

Pulse Power Dissipation

DSS4160DS

Document number DS36556 Rev. 1 – 2

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50mm x 50mm 2oz FR4

One active die t<5secs

25mm x 25mm 1oz FR4

Two active die

50mm x 50mm 2oz FR4

One active die

25mm x 25mm 1oz FR4

one active die

15mm x 15mm 1oz FR4

one active die

0 20 40 60 80 100 120 140 160

Temperature (°C)

Derating Curve

November 2013

© Diodes Incorporated