Diodes DSS4140V User Manual

θ

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Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available (DSS5140V)

• Low Collector-Emitter Saturation Voltage, V

• Surface Mount Package Suited for Automated Assembly

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 1)

• "Green Device" (Note 2)

NEW PRODUCT

Maximum Ratings @T

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Repetitive Peak Collector Current (Note 3) Peak Pulse Collector Current Base Current (DC) Peak Base Current

Top View

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

LOW V

NPN SURFACE MOUNT TRANSISTOR

CE(SAT)

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, “Green” Molding Compound. UL

CE(SAT)

Bottom View Device Schematic Pin Out Configuration

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.003 grams (approximate)

654

123

40 V 40 V

5 V 1 A 2 A 3 A

300 mA

1 A

V V V

3

I

CRP

I

CBO CEO EBO

I

C

CM

I

B

BM

1, 2, 5, 6

4

DSS4140V

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4) @ TA = 25°C PD Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

DSS4140V

Document number: DS31655 Rev. 2 - 2

2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_fre e/index.php.

3. Operated under pulsed conditions: Pulse width ≤ 30ms; duty cycle ≤ 0.2.

4. Device mounted on FR-4 PCB with minimum recommended pad layout.

T

1 of 5

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600 mW

R

JA

, T

J

STG

208

-55 to +150

°C/W

°C

March 2009

(BR)

)

r

P, P

OWER

PAT

O

N

C

O

C

T

O

R CUR

R

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage

Collector Cutoff Current Collector Cutoff Current

Emitter Cutoff Current

V V V

I

ON CHARACTERISTICS (Note 5)

DC Current Gain

Collector-Emitter Saturation Voltage

Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage

NEW PRODUCT

Base-Emitter Turn On Voltage

V

CE(SAT)

R

CE(SAT

V

BE(SAT

V

BE(ON

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

Current Gain-Bandwidth Product

SWITCHING CHARACTERISTICS

Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time

Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

600

CBO CEO EBO

CBO

CES EBO

40

5

⎯ ⎯ ⎯ ⎯

⎯ ⎯

40

300

FE

200

300

h

75

⎯

⎯ ⎯ ⎯

⎯ ⎯

obo

f

T

t

on

t

d

t

off

t

⎯

s

t

⎯

f

150

⎯ ⎯ ⎯

⎯

⎯ ⎯ ⎯ ⎯ ⎯ ⎯

⎯ ⎯ ⎯

⎯

⎯ ⎯ ⎯ ⎯

⎯ ⎯

58 30

28 375 350

25

10

V

IC = 100μA, IE = 0

V

IC = 10mA, IB = 0

V

IE = 100μA, IC = 0

nA

100

50 100 nA 100 nA

⎯

900

⎯

80 110 190 440

190 mΩ

1.2 V

1.1 V

10 pF

⎯ ⎯ ⎯ ⎯ ⎯ ⎯

VCB = 40V, IE = 0

μA

V VCE = 40V, VBE = 0 V

V V

⎯

V V I I

mV

I I IC = 1A, IB = 100mA IC = 1A, IB = 100mA V

VCB = 10V, f = 1.0MHz

MHz

VCE = 10V, IC = 50mA, f = 100MHz

ns ns ns

V

ns

I ns ns

DSS4140V

= 40V, IE = 0, TA = 150°C

CB

= 5V, IC = 0

EB

= 5V, IC = 1mA

CE

= 5V, IC = 500mA

CE

= 5V, IC = 1A

CE

= 5V, IC = 2A

CE

= 100mA, IB = 1mA

C

= 500mA, IB = 50mA

C

= 1A, IB = 100mA

C

= 2A, IB = 200mA

C

= 5V, IC = 1A

CE

= 10V

CC

= 0.5A, IB1 = IB2 = 25mA

C

Pw = 1ms

Pw = 10ms

(mW) I

DISSI

D

500

400

300

200

100

0

R = 208°C/W

θ

JA

25 50

T , AMBIENT TEMPERATURE (°C)

A

75 100 125

Fig. 1 Power Dissipation vs.

Ambient Tem peratur e ( N ot e 4)

150

(A)

1

EN

0.1

Pw = 100ms

DC

LLE

0.01

C

I,

0.001

0.1 1 10 100 V , COLLE CTOR-EM ITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emi t ter Voltage (Note 4)

DSS4140V

Document number: DS31655 Rev. 2 - 2

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March 2009

C CUR

RENT G

C

O

C

T

O

R

T

TER

T

TER TURN-O

OLTAG

T

TER

TURATIO

OLTAG

C

PACITANC

NEW PRODUCT

DSS4140V

1,600

1,400

V = 5V

CE

1

I/I = 10

CB

1,200

AIN

1,000

FE

h, D

800

600

400

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

-EMI

VOLTAGE (V)

LLE

0.01

SATURATION

CE(SAT)

V,

0.1

T = 150°C

A

T = 85°C

A

T = 25°C

T = -55°C

A

200

0

1 10 100 1,000 10,000

I , COLLECTOR CURRENT (mA)

Fig. 3 Typical DC Current Gain vs. Collector Current

C

1.2

E (V)

V = 5V

CE

1.0

0.001

1.2

E (V)

1.0

0.1

1 10 100 1,000 10,000

I , COLLECTOR CURRENT (mA)

Fig. 4 Typical Collector-Emitter Saturation Voltage

C

vs. Collector Current

I = 10

/I

CB

N V

BE(ON)

V , BASE-EMI

E (pF)

A

0.8

T = -55°C

A

0.6

T = 25°C

A

0.4

T = 85°C

A

0.2

T = 150°C

A

0

0.1

1 10 100 1,000 10,000

I , COLLECTOR CURRENT (mA)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

200

160

120

80

C

ibo

f = 1MHz

N V

0.8

T = -55°C

A

0.6

T = 25°C

SA

0.4

0.2

A

T = 85°C

A

T = 150°C

A

0

0.1 10 100 1,000 10,000

BE(SAT)

V , BASE-EMI

1

I , COLLECTOR CURRENT (mA)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

40

C

obo

0

0.1 1 10 100 V , REVERSE VOLTAGE (V)

R

Fig. 7 Typical Capaci t ance Characteristics

DSS4140V

Document number: DS31655 Rev. 2 - 2

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March 2009

T

R

T T

HER

R

TANC

Y

1

0.1

0.01

D = 0.7 D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

E

ESIS

MAL

ANSIEN

r(t),

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 10,000 t , PULSE DURATION TIME (s)

1

Fig. 8 Transient Therm al Respo nse (Note 4)

NEW PRODUCT

Ordering Information (Note 6)

Part Number Case Packaging

DSS4140V-7 SOT-563 3000/Tape & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

R (t) = r(t) *

θ

JA

R = 180°C/W

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA

Duty Cycle, D = t /t

R

θ

JA

θ

12

1,000

DSS4140V

Marking Information

ZN6

M

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ZN6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September)

Package Outline Dimensions

K

DSS4140V

Document number: DS31655 Rev. 2 - 2

A

SOT-563

B

C

Dim Min Max Typ

A 0.15 0.30 0.20 B 1.10 1.25 1.20

D

G

C 1.55 1.70 1.60 D - - 0.50

G 0.90 1.10 1.00

H 1.50 1.70 1.60 K 0.55 0.60 0.60

M

L 0.10 0.30 0.20

M 0.10 0.18 0.11

All Dimensions in mm

H

L

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March 2009

DSS4140V

Suggested Pad Layout

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.

NEW PRODUCT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.

G

Z

Y

X

C2

C1

IMPORTANT NOTICE

LIFE SUPPORT

Dimensions Value (in mm)

Z 2.2 G 1.2 X 0.375 Y 0.5

C1 1.7 C2 0.5

DSS4140V

Document number: DS31655 Rev. 2 - 2

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March 2009