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r
Features
• Low Collector-Emitter Saturation Voltage, V
• Ultra-Small Leadless Surface Mount Package
• ESD: HBM 8kV, MM 400V
• Complementary NPN Type Available (DSS2540M)
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free, "Green" Device (Note 2)
DFN1006-3
Bottom View Top View
CE(sat)
B
Device Symbol
DSS3540M
40V LOW V
PNP SURFACE MOUNT TRANSISTOR
CE(sat)
Mechanical Data
• Case: DFN1006-3
• Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.0009 grams (Approximate)
C
B
C
E
E
Device Schematic
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS3540M-7 TD 7 8mm 3,000
DSS3540M-7B TD 7 8mm 10,000
Notes: 1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DSS3540M-7
TD TD
Top View
Dot Denotes Collector Side
Ba
DSS3540M
Document number: DS31821 Rev. 2 - 2
DSS3540M-7B
Top View
Denotes Base and Emitter Side
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TD = Product Type Marking Code
January 2011
© Diodes Incorporated
Page 2
θ
T
R
T T
HER
R
TANC
R
OWER
P, P
OWER
PAT
O
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
Collector Current - Continuous
Peak Pulse Collector Current
Peak Base Current
I
I
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
1
0.1
0.01
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
E
ESIS
MAL
ANSIEN
R
, T
T
J
CBO
CEO
EBO
I
C
CM
BM
JA
STG
DSS3540M
P(pk)
-40 V
-40 V
-6 V
-500 mA
-1 A
-100 mA
250 mW
500
-55 to +150
R (t) = r(t) *
θ
JA
R = 500°C/W
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
t
θθJA
1
t
2
°C/W
°C
D = 0.005
r(t),
0.001
0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
D = Single Pulse
0.00001
t , PULSE DURA TION TIME (s)
1
Fig. 1 Transient Therma l Re sponse
1,000
(W)
100
10
ANSIENT P
Single Pulse
R (t) = r(t) *
θ
JA
R = 500°C/W
T - T = P * R (t)
JA JA
R
JA
θθJA
θ
0.30
0.25
N (W)
0.20
I
0.15
DISSI
0.10
1
P(pk), PEAK T
0.1
1E-06 0.0001 0.01 1 100 10,000
t , PULSE DURATION TIME (s)
1
Fig. 2 Single Pulse Maximum Power Dissipation
D
R = 500°C/W
0.05
θ
JA
0
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 3 Power Dissipation vs. Ambient Temperature (Note 4)
DSS3540M
Document number: DS31821 Rev. 2 - 2
2 of 5
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January 2011
© Diodes Incorporated
Page 3
)
)
)
C
O
CTO
R
C
URREN
T
C C
URR
T
G
DSS3540M
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
BV
BV
BV
I
I
CBO
CEO
EBO
CBO
EBO
-40
-40
-6
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
V
V
V
-100
-50
nA
μA
-100 nA
IC = -100μA, IE = 0
IC = -10mA, IB = 0
IE = -100μA, IC = 0
VCB = -30V, IE = 0
= -30V, IE = 0, TA = 150°C
V
CB
V
= -5V, IC = 0
EB
ON CHARACTERISTICS (Note 5)
= -2V, IC = -10mA
V
CE
⎯
mV
= -2V, IC = -100mA
V
CE
V
= -2V, IC = -500mA
CE
I
= -10mA, IB = -0.5mA
C
= -100mA, IB = -5mA
I
C
I
= -200mA, IB = -10mA
C
= -500mA, IB = -50mA
I
C
IC = -500mA, IB = -50mA
IC = -500mA, IB = -50mA
V
= -2V, IC = -100mA
CE
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
h
V
CE(sat)
R
CE(sat
V
BE(sat
V
BE(on
200
FE
40
150
⎯
⎯
⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-50
-130
-200
-350
700 mΩ
-1.2 V
-1.1 V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
C
obo
f
T
⎯ ⎯
100
1.0
0.9
0.8
(A)
0.7
I = -5mA
B
0.6
0.5
0.4
LLE
0.3
C
0.2
-I ,
I = -4mA
B
I = -3mA
B
I = -2mA
B
I = -1mA
B
0.1
0
012345
-V , COLLECTOR-EMITTER VOLT AGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
AIN
EN
h, D
10 pF
⎯ ⎯
VCB = -10V, f = 1.0MHz
MHz
VCE = -5V, IC = -100mA, f = 100MHz
800
700
T = 150°C
600
500
A
T = 125°C
A
T = 85°C
A
400
T = 25°C
A
T = -55°C
A
FE
300
200
100
0
0.1 1 10 100 1,000
Fig. 5 Typical DC Current Gain vs. Collector Current
-I , COLLECTOR CURRENT (mA)
C
DSS3540M
Document number: DS31821 Rev. 2 - 2
3 of 5
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January 2011
© Diodes Incorporated
Page 4
C
O
CTO
R
T
TER
T
TER
TURATIO
OLTAG
T
TER TUR
N-O
N VOLTAG
R, C
O
CTO
R
T
TER
DSS3540M
1
I/I = 20
CB
1.2
E (V)
I = 20
/I
CB
1.0
-EMI
N V
0.8
VOLTAGE (V)
0.1
LLE
SATURATION
CE(SAT)
-V ,
0.01
0.1 1 10 100 1,000
Fig. 6 Typical Collector-Emitter Saturation Voltage
-I , COLLECTOR CURRENT (mA)
C
T = 150°C
T = 125°C
A
A
T = -55°C
A
vs. Collecto r Cu rrent
1.2
E (V)
V = -2V
CE
1.0
0.8
T = -55°C
A
0.6
T = 25°C
A
0.4
T = 85°C
T = 125°C
T = 150°C
A
0
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Base-Emitter Turn-On Voltage
BE(ON)
-V , BASE-EMI
0.2
A
A
vs. Collector Current
T = 85°C
A
T = 25°C
A
-EMI
LLE
-
SA
-V , BASE-EMI
CE(SAT)
0.6
0.4
0.2
BE(SAT)
1,000
Ω
()
SATURATION RESISTANCE
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
T = 150°C
A
A
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
I/I = 20
CB
100
10
T = -55°C
A
T = 25°C
1
0.1
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
Fig. 9 Typica l Collector-Emitter Sa tu r at i on R esistance
A
T = 85°C
A
T = 125°C
A
C
T = 150°C
A
vs. Collect or Current
Package Outline Dimensions
DSS3540M
Document number: DS31821 Rev. 2 - 2
A
DFN1006-3
A1
D
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0 0.05 0.03
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
b1
b2
E
e
E 0.55 0.675 0.60
e
⎯ ⎯
0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3
⎯ ⎯
0.40
All Dimensions in mm
L2
L1L3
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January 2011
© Diodes Incorporated
Page 5
DSS3540M
Suggested Pad Layout
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
X
1
G2
X
C
Dimensions Value (in mm)
Z 1.1
G1 0.3
G2 0.2
X 0.7
X1 0.25
G1
Y
Z
IMPORTANT NOTICE
LIFE SUPPORT
Y 0.4
C 0.7
DSS3540M
Document number: DS31821 Rev. 2 - 2
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January 2011
© Diodes Incorporated
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