Features
• Ideal for Medium Power Amplification and Switching
• Ultra Low Collector-Emitter Saturation Voltage
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• “Green” Device (Note 2)
• ESD rating: 400V-MM, 8KV-HBM
ADVANCE INFORMATION
Top View
LOW V
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
C
B
E
Device Symbol Pin Configuration
C
B
DSS30101L
E
Ordering Information
Part Number Case Packaging
DSS30101L-7 SOT-23 3000/Tape & Reel
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DSS30101L
Document number: DS31588 Rev. 3 - 2
ZN3
www.diodes.com
ZN3 = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
1 of 6
August 2010
© Diodes Incorporated
θ
P, P
OWER
PATIO
N
R
OWER
T
R
T
T
HER
R
TANC
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 3. Device mounted on FR-4 PCB MRP
0.8
ADVANCE INFORMATION
0.6
(W)
DSS30101L
V
CBO
V
CEO
V
EBO
I
CM
I
C
R
JA
, T
T
J
STG
400
(W)
300
50 V
30 V
5 V
2 A
1 A
600 mW
209 °C/W
-55 to +150 °C
Single Puls e
R (t) = r(t) *
θ
JA
R = 175°C/W
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
θθJA
0.4
DISSI
R = 209°C/W
0.2
θ
D
JA
200
ANSIENT P
100
P(pk), PEAK T
0
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs . Ambi ent Temperature (Note 3)
0
0.00001 0.001 0.1 10 1,000
t , PULSE DURATION TIME (s)
1
Fig. 2 Single Pulse Maximum Power Dissipation
1
D = 0.9
E
D = 0.7
D = 0.5
ESIS
0.1
D = 0.3
MAL
D = 0.1
0.01
ANSIEN
r(t),
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R (t) = r(t) *
θ
JA
R = 175°C/W
P(pk)
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
t
θθJA
1
t
2
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
t , PULSE DURATION TIME (s)
1
Fig. 3 Transient Thermal Respo nse
DSS30101L
Document number: DS31588 Rev. 3 - 2
2 of 6
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August 2010
© Diodes Incorporated
(BR)
(BR)
(BR)
)
)
)
r
C
O
CTO
R C
U
R
R
T
C C
URR
N
T
GAIN
DSS30101L
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain (Note 4)
Collector-Emitter Saturation Voltage (Note 4)
Equivalent On-Resistance (Note 4)
Base-Emitter Saturation Voltage (Note 4)
Base-Emitter Turn-on Voltage (Note 4)
Transition Frequency
Output Capacitance
ADVANCE INFORMATION
Input Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
R
CE(sat
V
BE(sat
V
BE(on
f
T
C
obo
C
ibo
t
on
t
⎯
d
t
⎯
t
off
t
⎯
s
t
⎯
f
⎯
⎯
50
30
5
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
300
⎯ ⎯
300 450 900
200
⎯ ⎯ V
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
⎯
0.93 1.1 V
0.80 1.1 V
100 250
⎯
⎯
9 15 pF
65
57
19
38
340
315
25
V
IC = 100μA
V
IC = 10mA
V
IE = 100μA
100
50
100 nA
nA
V
μA
V
VEB = 4V, IC = 0
V
V
⎯
75
125
200
200
I
C
mV
I
C
I
C
mΩ
IE = 1A, IB = 100mA
IC = 1A, IB = 100mA
VCE = 2V, IC = 1A
⎯
f = 100MHz
V
MHz
VCB = 10V, f = 1MHz
⎯
⎯
⎯
⎯
⎯
⎯
⎯
pF
VEB = 5V, f = 1MHz
ns
ns
ns
V
ns
I
B1
ns
ns
= 30V, IE = 0
CB
= 30V, IE = 0, TA = 150°C
CB
= 5V, IC = 50mA
CE
= 5V, IC = 0.5A
CE
= 5V, IC = 1A
CE
= 0.1A, IB = 1mA
= 0.5A, IB = 50mA
= 1.0A, IB = 100mA
= 5V, IC = 100mA,
CE
= 5V, IC = 500mA,
CC
= -IB2 = 50mA
2.2
(A)
EN
2.0
1.8
1.6
1.4
I = 5mA
B
I = 4mA
B
I = 3mA
B
1.2
1.0
I = 2mA
B
0.8
LLE
0.6
C
I,
0.4
I = 1mA
B
0.2
0
012345
V , COLLECTOR-EMITTER VOLT AGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1,200
1,100
1,000
900
800
700
E
600
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
500
400
FE
h, D
300
T = -55°C
A
200
100
0
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
Fig. 5 Typical DC Current Gain vs. Collector Current
C
DSS30101L
Document number: DS31588 Rev. 3 - 2
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August 2010
© Diodes Incorporated
C
O
CTO
R
T
TER
R
Q
U
T ON-R
TANC
2
T
TER TUR
N-O
N VOLTAG
T
TER
TURATIO
N VOLTAG
CAPACITAN
C
DSS30101L
0.3
I/I = 10
CB
500
I/I = 10
450
E (V)
CB
400
0.2
-EMI
VOLTAGE (V)
LLE
0.1
T = 150°C
SATURATION
CE(SAT)
V,
0
0.001 0.01 0.1 1 10
Fig. 6 Typical Collector-Emitter Saturation Voltage
I , COLLECTOR CURRENT (A)
C
T = 125°C
A
A
T = 25°C
T = -55°C
A
T = 85°C
A
A
vs. Collector Current
1.
ADVANCE INFORMATION
E (V)
V = 5V
CE
1.0
350
ESIS
300
250
T = 125°C
T = -55°C
A
A
T = 150°C
A
200
IVALEN
T = 85°C
A
150
, E
CE(SAT)
100
50
T = 25°C
A
0
0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 7 Typical Equivalent On-Resistance
vs. Collecto r Cu r re nt
1.4
E (V)
I = 10
1.2
/I
CB
0.8
T = -55°C
A
0.6
T = 25°C
A
0.4
T = 85°C
T = 125°C
T = 150°C
0.2
BE(ON)
V , BASE-EMI
A
0
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 8 Typical Base-E m i tter Tur n-On V oltage
A
A
vs. Collector Current
150
120
E (pF)
90
60
C
ibo
f = 1MHz
1.0
0.8
T = -55°C
A
SA
0.6
T = 25°C
A
T = 85°C
0.4
T = 150°C
A
T = 125°C
A
A
0.2
0
0.001 0.01 0.1 1 10
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (A)
C
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
30
C
obo
0
0 5 10 15 20 25 30 35 40
V , REVERSE VOLTAGE (V)
R
Fig. 10 Typical Capacitance Characteristics
DSS30101L
Document number: DS31588 Rev. 3 - 2
4 of 6
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August 2010
© Diodes Incorporated
Package Outline Dimensions
ADVANCE INFORMATION
K
J
Suggested Pad Layout
Z
DSS30101L
Document number: DS31588 Rev. 3 - 2
DSS30101L
A
Dim Min Max Typ
A 0.37 0.51 0.40
C
B
H
K1
F
D
G
Y
X
L
E
M
C
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B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α
Dimensions Value (in mm)
SOT-23
0° 8° -
All Dimensions in mm
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
August 2010
© Diodes Incorporated
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
ADVANCE INFORMATION
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
IMPORTANT NOTICE
LIFE SUPPORT
DSS30101L
DSS30101L
Document number: DS31588 Rev. 3 - 2
6 of 6
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August 2010
© Diodes Incorporated
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