Diodes DSS30101L User Manual
Features
• Ideal for Medium Power Amplification and Switching
• Ultra Low Collector-Emitter Saturation Voltage
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• “Green” Device (Note 2)
• ESD rating: 400V-MM, 8KV-HBM
ADVANCE INFORMATION
Top View
LOW V
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
C
B
E
Device Symbol Pin Configuration
C
B
DSS30101L
E
Ordering Information
Part Number Case Packaging
DSS30101L-7 SOT-23 3000/Tape & Reel
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DSS30101L
Document number: DS31588 Rev. 3 - 2
ZN3
www.diodes.com
ZN3 = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
1 of 6
August 2010
© Diodes Incorporated
θ
P, P
OWER
PATIO
N
R
OWER
T
R
T
T
HER
R
TANC
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 3. Device mounted on FR-4 PCB MRP
0.8
ADVANCE INFORMATION
0.6
(W)
DSS30101L
V
CBO
V
CEO
V
EBO
I
CM
I
C
R
JA
, T
T
J
STG
400
(W)
300
50 V
30 V
5 V
2 A
1 A
600 mW
209 °C/W
-55 to +150 °C
Single Puls e
R (t) = r(t) *
θ
JA
R = 175°C/W
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
θθJA
0.4
DISSI
R = 209°C/W
0.2
θ
D
JA
200
ANSIENT P
100
P(pk), PEAK T
0
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs . Ambi ent Temperature (Note 3)
0
0.00001 0.001 0.1 10 1,000
t , PULSE DURATION TIME (s)
1
Fig. 2 Single Pulse Maximum Power Dissipation
1
D = 0.9
E
D = 0.7
D = 0.5
ESIS
0.1
D = 0.3
MAL
D = 0.1
0.01
ANSIEN
r(t),
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R (t) = r(t) *
θ
JA
R = 175°C/W
P(pk)
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
t
θθJA
1
t
2
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
t , PULSE DURATION TIME (s)
1
Fig. 3 Transient Thermal Respo nse
DSS30101L
Document number: DS31588 Rev. 3 - 2
2 of 6
www.diodes.com
August 2010
© Diodes Incorporated