Diodes DSS2540M User Manual
r
Features
• Low Collector-Emitter Saturation Voltage, V
• Ultra-Small Leadless Surface Mount Package
• ESD: HBM 8kV, MM 400V
• Complementary PNP Type Available (DSS3540M)
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen, and Antimony Free. "Green" Device (Note 2)
DFN1006-3
Bottom View
CE(sat)
40V LOW V
Mechanical Data
• Case: DFN1006-3
• Case Material: Molded Plastic, "Green" Molding Compound.
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
• Weight: 0.0009 grams (Approximate)
C
B
E
Device Symbol
NPN SURFACE MOUNT TRANSISTOR
CE(sat)
UL Flammability Classification Rating 94V-0
per MIL-STD-202, Method 208
B
C
E
Top View
Device Schematic
DSS2540M
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS2540M-7 TC 7 8mm 3,000
DSS2540M-7B TC 7 8mm 10,000
Notes: 1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DSS2540M-7
TC TC
Top View
Dot Denotes Collector Side
Ba
DSS2540M
Document number: DS31820 Rev. 3 - 2
DSS2540M-7B
Top View
Denotes Base and Emitter Side
1 of 5
www.diodes.com
TC = Product Type Marking Code
January 2011
© Diodes Incorporated
θ
T
R
T T
HER
R
TANC
R
OWER
P
P
OWER
P
T
O
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
Collector Current - Continuous
Peak Pulse Collector Current
Peak Base Current
I
I
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
1
0.1
0.01
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
E
ESIS
MAL
ANSIEN
R
, T
T
J
CBO
CEO
EBO
I
C
CM
BM
JA
STG
DSS2540M
P(pk)
40 V
40 V
6 V
500 mA
1 A
100 mA
250 mW
500
-55 to +150
R (t) = r(t) *
θ
JA
R = 500°C/W
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
t
θθJA
1
t
2
°C/W
°C
D = 0.005
r(t),
0.001
0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
D = Single Pulse
0.00001
t , PULSE DURATION TIME (s)
1
Fig. 1 Transient Therma l Re sponse
1,000
(W)
100
Single Pulse
R (t) = r(t) *
θ
JA
R = 500°C/W
T - T = P * R (t)
JA JA
R
JA
θθJA
θ
0.30
0.25
N (W)
0.20
I
A
10
ANSIENT P
0.15
DISSI
0.10
1
,
D
0.05
R = 500°C/W
θ
JA
P(pk), PEAK T
0.1
1E-06 0.0001 0.01 1 100 10,000
t , PULSE DURATION TIME (s)
1
Fig. 2 Single Pulse Maximum Power Dissipation
0
0 50 100 150 200
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 3 Power Dissipation vs. Ambient Temperature (Note 4)
DSS2540M
Document number: DS31820 Rev. 3 - 2
2 of 5
www.diodes.com
January 2011
© Diodes Incorporated
Loading...