Diodes DSS2515M User Manual

r

Features

• Low Collector-Emitter Saturation Voltage, V

• Ultra-Small Leadless Surface Mount Package

• ESD HBM SKV MM 400V

• Complementary PNP Type Available (DSS3515M)

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

DFN1006-3

Bottom View

CE(sat)

B

Device Symbol

DSS2515M

15V LOW V

NPN SURFACE MOUNT TRANSISTOR

CE(sat)

Mechanical Data

• Case: DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0009 grams (Approximate)

C

B

C

E

E

Top View

Device Schematic

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DSS2515M-7 TA 7 8mm 3,000

DSS2515M-7B TA 7 8mm 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DSS2515M

Document number: DS31816 Rev. 3 - 2

DSS2515M-7

TA TA

Top View

Dot Denotes Collector Side

DSS2515M-7B

Ba

Denotes Base and Emitter Side

Top View

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TA = Product Type Marking Code

January 2011

© Diodes Incorporated

θ

T

R

T T

HER

R

TANC

R

OWER

P

P

OWER

P

T

O

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage

V
V

V
Collector Current - Continuous
Peak Pulse Collector Current
Peak Base Current

I
I

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.

1

0.1

0.01

D = 0.9

D = 0.7

D = 0.5
D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

E

ESIS

MAL

ANSIEN

R

, T

T

J

CBO
CEO
EBO

I

C
CM
BM

JA

STG

DSS2515M

P(pk)

15 V
15 V

6 V

500 mA

1 A

100 mA

250 mW
500

-55 to +150

R (t) = r(t) *

θ

JA

R = 500°C/W

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

JA

t

θθJA

1

t

2

°C/W

°C

D = 0.005

r(t),

0.001

0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000

D = Single Pulse

0.00001
t , PULSE DURA TION TIME (s)

1

Fig. 1 Transient Therma l Re sponse

1,000

(W)

100

Single Pulse

R (t) = r(t) *

θ

JA

R = 500°C/W

T - T = P * R (t)

JA JA

R

JA

θθJA

θ

0.30

0.25

N (W)

0.20

I
A

10

ANSIENT P

0.15

DISSI

0.10

1

,

D

0.05

R = 500°C/W

θ

JA

P(pk), PEAK T

0.1
1E-06 0.0001 0.01 1 100 10,000

t , PULSE DURATION TIME (s)

1

Fig. 2 Single Pulse Maximum Power Dissipation

0

0 50 100 150 200

T , AMBIENT TEMPERATURE ( C)

A

°

Fig. 3 Power Dissipation vs. Ambient Temperature (Note 4)

DSS2515M

Document number: DS31816 Rev. 3 - 2

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)

)

)

C

O

CTO

R C

U

R

RENT

C

C

U

R

R

T G

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage

Collector Cutoff Current
Emitter Cutoff Current

BV

CBO

BV

CEO

BV

EBO

I

⎯ ⎯

CBO

I

EBO

ON CHARACTERISTICS (Note 5)

200

DC Current Gain

Collector-Emitter Saturation Voltage

Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage

h

V

CE(sat)

R

CE(sat

V

BE(sat

V

BE(on

FE

150

⎯ ⎯
⎯ ⎯

⎯ ⎯

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Current Gain-Bandwidth Product

Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

C

⎯ ⎯

f

obo

T

250

1.0

15
15

6

⎯ ⎯
⎯ ⎯
⎯ ⎯

⎯ ⎯

⎯
⎯

90

⎯

⎯
⎯

⎯

⎯
⎯
⎯

⎯ ⎯

100

50

100 nA

⎯

⎯
⎯

25
150
250

500 mΩ

1.1 V

0.9 V

6 pF

800

V

IC = 100μA, IE = 0

V

IC = 10mA, IB = 0

V

IE = 100μA, IC = 0

nA

VCB = 15V, IE = 0

μA

⎯

mV

= 15V, IE = 0, TA = 150°C

V

CB

V

= 5V, IC = 0

EB

= 2V, IC = 10mA

V

CE

= 2V, IC = 100mA

V

CE

V

= 2V, IC = 500mA

CE

I

= 10mA, IB = 0.5mA

C

= 200mA, IB = 10mA

I

C

I

= 500mA, IB = 50mA

C

IC = 500mA, IB = 50mA
IC = 500mA, IB = 50mA
V

= 2V, IC = 100mA

CE

VCB = 10V, f = 1.0MHz

MHz

VCE = 5V, IC = 100mA, f = 100MHz

DSS2515M

700

I = 5mA

0.8

(A)

0.6

B

I = 4mA

B

I = 3mA

B

600

AIN

500

T = 150°C

A

T = 125°C

A

T = 85°C

A

EN

FE

h, D

400

300

200

I = 2mA

B

0.4

LLE

C

0.2

I,

I = 1mA

B

T = 25°C

A

T = -55°C

A

100

0

012

V , COLLE CTOR -EMI TTER VOLTAGE (V)

CE

Fig. 4 Typical Collector Current

vs. C ollector-Emitter Vo ltage

0

1 10 100 1,000

Fig. 5 Typical DC Current Gain vs. Collector Current

-I , COLLECTOR CURRENT (mA)

C

DSS2515M

Document number: DS31816 Rev. 3 - 2

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C

O

C

TOR

T

TER

2

T

TER

TURATIO

OLTAG

T

TER TUR

N-O

N VOLTAG

R, C

O

CTO

R

T

TER

DSS2515M

1

I/I = 20

CB

1.

E (V)

I = 20

/I

CB

1.0

N V

-EMI

0.8

VOLTAGE (V)

0.1

LLE

T = 150°C

SATURATION

CE(SAT)

V,

0.01

0.1 10 100 1,000
Fig. 6 Typical Collector-Emitter Saturation Voltage

1

I , COLLECTOR CURRENT (mA)

C

T = 125°C

A

A

T = -55°C

A

vs. Collector Current

1.2

E (V)

V = 2V

CE

1.0

T = 85°C

A

T = 25°C

A

SA

0.6

0.4

0.2

0.1 1 10 100 1,000

BE(SAT)

V , BASE-EMI

1,000

Ω

()

100

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

T = 150°C

A

I , COLLECTOR CURRENT (mA)

C

A

Fig. 7 Typical Base-Emitter Saturation Voltage

vs. Collector Current

I/I = 20

CB

0.8

-EMI

T = -55°C

A

10

LLE

0.6

0.4

BE(ON)

0.2

V , BASE-EMI

0.1 1 10 100 1,000
Fig. 8 Typical Base-Emitter Turn-On Voltage

T = 25°C

A

T = 85°C

A

T = 125°C

T = 150°C

A

I , COLLECTOR CURRENT (mA)

C

A

vs. Collector Current

1

CE(SAT)

SATURATION RESISTANCE

-

0.1

0.1 1 10 100 1,000

Fig. 9 Typical Collector-Emitter Saturation Resistance

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

-I , COLLECTOR CURRENT (mA)

C

vs. Collector Current

T = 150°C

A

Package Outline Dimensions

DSS2515M

Document number: DS31816 Rev. 3 - 2

A

A1

D

DFN1006-3

Dim Min Max Typ

A 0.47 0.53 0.50

A1 0 0.05 0.03

b1 0.10 0.20 0.15
b2 0.45 0.55 0.50

D 0.95 1.075 1.00

b1

b2

E

e

E 0.55 0.675 0.60

e

⎯ ⎯

0.35

L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3

⎯ ⎯

0.40

All Dimensions in mm

L2

L1L3

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DSS2515M

Suggested Pad Layout

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

X

1

G2

X

C

Dimensions Value (in mm)

Z 1.1
G1 0.3
G2 0.2

X 0.7

X1 0.25

G1

Y

Z

IMPORTANT NOTICE

LIFE SUPPORT

Y 0.4

C 0.7

DSS2515M

Document number: DS31816 Rev. 3 - 2

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January 2011

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