Diodes DSS20201L User Manual
θ
θ
Please click here to visit our online spice models database.
Features
• Ideal for Medium Power Amplification and Switching
• Complementary PNP Type Available (DSS20200L)
• Ultra Low Collector-Emitter Saturation Voltage
• Lead Free By Design/RoHS Compliant (Note 1)
• “Green” Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Top View
DSS20201L
LOW V
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, "Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
C
B
Device Schematic
V
CBO
V
CEO
V
EBO
I
CM
I
C
E
20 V
20 V
6 V
4 A
2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DSS20201L
Document number: DS31605 Rev. 2 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
R
R
, T
T
J
1 of 5
www.diodes.com
JA
JA
STG
600 mW
209 °C/W
1.2 mW
104 °C/W
-55 to +150 °C
December 2008
© Diodes Incorporated
(BR)
(BR)
(BR)
)
)
)
r
C
O
CTO
R CUR
REN
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
NEW PRODUCT
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
1.6
V
V
V
V
R
CBO
CEO
EBO
I
⎯ ⎯
CBO
I
⎯ ⎯
EBO
h
FE
CE(SAT)
CE(SAT
V
BE(SAT
V
BE(ON
f
T
C
⎯ ⎯
obo
C
⎯ ⎯
ibo
t
on
t
d
t
t
off
t
s
t
f
20
20
6
200
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
200 330
200
200
⎯ ⎯ V
⎯ ⎯ V
⎯ ⎯
⎯
⎯
⎯
⎯
40 50
75 90
70 100
35 50
⎯ ⎯
⎯ ⎯
150
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
10
V
IC = 100μA
V
IC = 10mA
V
IE = 100μA
100
100 nA
nA
V
VEB = 6V, IC = 0
V
⎯ V
10
⎯
mV
I
I
I
I
mΩ
IE = 2A, IB = 200mA
0.9 V
0.9 V
45 pF
450 pF
200 ns
100 ns
100 ns
610 ns
500 ns
110 ns
IC = 1A, IB = 10mA
VCE = 2V, IC = 1A
V
MHz
f = 100MHz
VCB = 3V, f = 1MHz
VEB = 0.5V, f = 1MHz
V
I
V
I
DSS20201L
= 20V, IE = 0
CB
= 2V, IC = 10mA
CE
= 2V, IC = 500mA
CE
= 2V, IC = 1A
CE
= 2V, IC = 2A
CE
= 0.1A, IB = 10mA
C
= 1.0A, IB = 100mA
C
= 1.0A, IB = 10mA
C
= 2.0A, IB = 200mA
C
= 5V, IC = 100mA,
CE
= 15V, IC = 750mA,
CC
15mA
B1 =
= 15V, IC = 750mA,
CC
= IB2 = 15mA
B1
1.4
1.2
1.0
0.8
(Note 4)
1
(A)
Pw = 100ms
0.1
DC
Pw = 10ms
0.6
0.4
D
P , POWER DISSIPATION (W)
(Note 3)
LLE
I,
0.01
C
0.2
0
0
25 50 75 100 125 150
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Pow er Dissipation vs. Ambient Temperat ur e
0.001
0.1 1 10 100
V , COL LECTOR-E M ITTER VOLTAG E (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DSS20201L
Document number: DS31605 Rev. 2 - 2
2 of 5
www.diodes.com
December 2008
© Diodes Incorporated
Loading...