θ
θ
Please click here to visit our online spice models database.
Features
• Ideal for Medium Power Amplification and Switching
• Complementary PNP Type Available (DSS20200L)
• Ultra Low Collector-Emitter Saturation Voltage
• Lead Free By Design/RoHS Compliant (Note 1)
• “Green” Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Top View
DSS20201L
LOW V
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, "Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
C
B
Device Schematic
V
CBO
V
CEO
V
EBO
I
CM
I
C
E
20 V
20 V
6 V
4 A
2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DSS20201L
Document number: DS31605 Rev. 2 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
R
R
, T
T
J
1 of 5
www.diodes.com
JA
JA
STG
600 mW
209 °C/W
1.2 mW
104 °C/W
-55 to +150 °C
December 2008
© Diodes Incorporated
(BR)
(BR)
(BR)
)
)
)
r
C
O
CTO
R CUR
REN
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
NEW PRODUCT
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
1.6
V
V
V
V
R
CBO
CEO
EBO
I
⎯ ⎯
CBO
I
⎯ ⎯
EBO
h
FE
CE(SAT)
CE(SAT
V
BE(SAT
V
BE(ON
f
T
C
⎯ ⎯
obo
C
⎯ ⎯
ibo
t
on
t
d
t
t
off
t
s
t
f
20
20
6
200
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
200 330
200
200
⎯ ⎯ V
⎯ ⎯ V
⎯ ⎯
⎯
⎯
⎯
⎯
40 50
75 90
70 100
35 50
⎯ ⎯
⎯ ⎯
150
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
10
V
IC = 100μA
V
IC = 10mA
V
IE = 100μA
100
100 nA
nA
V
VEB = 6V, IC = 0
V
⎯ V
10
⎯
mV
I
I
I
I
mΩ
IE = 2A, IB = 200mA
0.9 V
0.9 V
45 pF
450 pF
200 ns
100 ns
100 ns
610 ns
500 ns
110 ns
IC = 1A, IB = 10mA
VCE = 2V, IC = 1A
V
MHz
f = 100MHz
VCB = 3V, f = 1MHz
VEB = 0.5V, f = 1MHz
V
I
V
I
DSS20201L
= 20V, IE = 0
CB
= 2V, IC = 10mA
CE
= 2V, IC = 500mA
CE
= 2V, IC = 1A
CE
= 2V, IC = 2A
CE
= 0.1A, IB = 10mA
C
= 1.0A, IB = 100mA
C
= 1.0A, IB = 10mA
C
= 2.0A, IB = 200mA
C
= 5V, IC = 100mA,
CE
= 15V, IC = 750mA,
CC
15mA
B1 =
= 15V, IC = 750mA,
CC
= IB2 = 15mA
B1
1.4
1.2
1.0
0.8
(Note 4)
1
(A)
Pw = 100ms
0.1
DC
Pw = 10ms
0.6
0.4
D
P , POWER DISSIPATION (W)
(Note 3)
LLE
I,
0.01
C
0.2
0
0
25 50 75 100 125 150
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Pow er Dissipation vs. Ambient Temperat ur e
0.001
0.1 1 10 100
V , COL LECTOR-E M ITTER VOLTAG E (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DSS20201L
Document number: DS31605 Rev. 2 - 2
2 of 5
www.diodes.com
December 2008
© Diodes Incorporated
C
O
CTO
R C
URR
T
C CUR
R
T
G
C
O
CTO
R
T
TER
T
TER TURN-O
OLTAG
2
T
T
R
T
U
RATIO
O
T
G
CAP
C
T
N
C
F
NEW PRODUCT
DSS20201L
1.8
1.6
(A)
EN
1.4
1.2
I = 5mA
B
I = 4mA
B
1.0
I = 3mA
0.8
LLE
0.6
C
0.4
I,
0.2
0
012345
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 3 Typical Collector Current
B
I = 2mA
B
I = 1mA
B
vs. Collector-Emitter Voltage
1
I/I = 10
CB
1,000
T = 150°C
A
T = 85°C
AIN
EN
A
T = 25°C
A
T = -55°C
A
100
FE
h, D
V = 2V
CE
10
1 10 100 1,000 10,000
Fig. 4 Typical DC Current Gain vs. Collector Current
I , COLLECTOR CURRENT (mA)
C
1.2
E (V)
V = 2V
CE
1.0
0.1
-EMI
VOLTAGE (V)
T = 150°C
A
T = 85°C
A
LLE
0.01
T = -55°C
SATURATION
CE(SAT)
V,
0.001
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
C
A
vs. Collector Current
1.
I = 10
/I
CB
E (V)
A
1.0
L
N V
0.8
T = -55°C
A
0.6
T = 25°C
A
SA
T = 85°C
E
A
0.4
T = 150°C
A
0.2
T = 25°C
A
N V
0.8
T = -55°C
A
0.6
T = 25°C
A
0.4
T = 85°C
A
T = 150°C
A
0.2
BE(ON)
0
V , BASE-EMI
1 10 100 1,000 10,000
1,000
)
100
E (p
A
I
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
f = 1MHz
C
ibo
A
10
C
obo
0
1 10 100 1,000 10,000
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collecto r Cu r re nt
1
0.1 1 10 100
V , REVERSE VOLT AGE (V)
R
Fig. 8 Typical Capacitance Characteristics
DSS20201L
Document number: DS31605 Rev. 2 - 2
3 of 5
www.diodes.com
December 2008
© Diodes Incorporated
G
T
H PRODUCT
H
T
R
T T
HER
R
TANC
NEW PRODUCT
DSS20201L
1,000
z)
(M
100
10
AIN-BANDWID
T
f,
V = 2V
CE
f = 100MHz
1
0102030405060708090100
I , COLLECTOR CURRENT (mA)
C
Fig. 9 Typical Gain-Bandwidt h Product
vs. Collector Current
1
0.1
0.01
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
θ
JA
R = 168°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
E
ESIS
MAL
ANSIEN
r(t),
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURA TION TIME (s)
1
Fig. 10 Transient Thermal Response
Ordering Information (Note 6)
Part Number Case Packaging
DSS20201L-7 SOT-23 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
ZN1
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DSS20201L
Document number: DS31605 Rev. 2 - 2
ZN1 = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
4 of 5
www.diodes.com
December 2008
© Diodes Incorporated
DSS20201L
Package Outline Dimensions
Suggested Pad Layout
NEW PRODUCT
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
K
J
Z
A
Dim Min Max Typ
A 0.37 0.51 0.40
C
B
H
K1
F
D
G
Y
L
X
E
M
C
IMPORTANT NOTICE
LIFE SUPPORT
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α
Dimensions Value (in mm)
SOT-23
0° 8° -
All Dimensions in mm
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
DSS20201L
Document number: DS31605 Rev. 2 - 2
5 of 5
www.diodes.com
December 2008
© Diodes Incorporated
Loading...