Diodes DSS20200L User Manual

E
B
Features
BV
I
I
Low Saturation Voltage V
R
Complimentary NPN Type : DSS20201L
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
> -20V
CEO
= -2A Continuous Collector Current
C
= -4A Peak Pulse Current
CM
< -120mV @ -1A
CE(sat)
= 40m for a low equivalent on-resistance
CE(SAT)
SOT23
Top View Device Symbol
DSS20200L
20V PNP LOW SATURATION TRANSISTOR IN SOT23
Mechanical Data
Case: SOT23
Case Material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
C
C
B
E
Top View
Pin-Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS20200L-7 ZP1 7 8 3,000
DSS20200L-13 ZP1 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ZP1
ZP1 = Product Type Marking Code YM = Date Code Marking
YM
Y = Year (ex: A = 2013) M = Month (ex: 9 = September)
DSS20200L
Document number: DS31604 Rev. 3 - 2
1 of 7
www.diodes.com
November 2013
© Diodes Incorporated
Absolute Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Collector Current
Continuous Collector Current
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation
Thermal Resistance, Junction to Ambient Air
(Note 5)
(Note 6) 1.2
(Note 5)
(Note 6) 104
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
ESD Ratings (Note 8)
DSS20200L
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
D
R
θJA
R
θJL
T
, T
J
STG
-20 V
-20 V
-7 V
-4 A
-2 A
600
mW
209
°C/W
75
-55 to +150 °C
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still
air conditions whilst operating in a steady-state.
6. Same as note (5), except mounted on 25mm x 25mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS20200L
Document number: DS31604 Rev. 3 - 2
2 of 7
www.diodes.com
November 2013
© Diodes Incorporated
C
O
CTO
R CUR
REN
T
T
R
T T
HER
R
TANC
DSS20200L
Thermal Characteristics and Derating information
1.6
1.4
1.2
1.0
0.8
(Note 4)
0.6
0.4
D
P , POWER DISSIPATION (W)
(Note 3)
0.2
0
25 50 75 100 125 150
0
T , AMBIENT TEMPERATURE ( C)A°
Figure 1 Power Dissipation vs. Ambient Temperature
1
0.1
0.01
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
E
ESIS
MAL
ANSIEN
r(t),
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s)
1
Figure 3 Transient Thermal Response
DSS20200L
Document number: DS31604 Rev. 3 - 2
3 of 7
www.diodes.com
10
(A)
1
Pw = 100ms
0.1
DC
Pw = 10ms
LLE
0.01
C
-I ,
0.001
0.1 1 10 100
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Figure 2 Typical Collector Current
vs. Collector-Emitter Voltage
R (t) = r(t) *
θ
JA
R = 166°C/W
P(pk)
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
t
θθJA
1
t
2
November 2013
© Diodes Incorporated
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