Diodes DSL12AW User Manual
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• Ultra Small Surface Mount Package
• Lead Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
• ESD rating: 400V-MM, 8KV-HBM
Top View
ADVANCE INFORMATION
Ordering Information
Part Number Case Packaging
DSL12AW-7 SOT-363 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
12V LOW V
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound.
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
• Weight: 0.006 grams (approximate)
1, 2, 5, 6
3
4
Top View
Device Schematic
PNP SURFACE MOUNT TRANSISTOR
CE(sat)
UL Flammability Classification Rating 94V-0
Solderable per MIL-STD-202, Method 208
654
123
Top View
Pin Out Configuration
DSL12AW
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ZPB
DSL12AW
Document Number: DS31644 Rev. 2 - 2
ZPB = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
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February 2011
© Diodes Incorporated
θ
θ
P, P
OWER
PATIO
C
O
CTO
R CUR
RENT
T
R
T
T
HER
R
TANC
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
Collector Current - Continuous
Peak Pulse Collector Current
I
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Device mounted on FR-4 PCB, mounted on 25mmx25mm square pad 1oz coverage of copper
0.8
R
R
T
, T
J
CBO
CEO
EBO
I
C
CM
JA
JA
10
STG
DSL12AW
-12 V
-12 V
-5 V
-2 A
-3 A
450 mW
275
°C/W
650 mW
192
-55 to +150
Pw = 100µs
°C/W
°C
ADVANCE INFORMATION
0.6
N (W)
0.4
Note 4
DISSI
Note 3
0.2
D
0
050100150200
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature
1
D = 0.7
E
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
D = 0.9
t , PULSE DURA TION TIME (s)
1
Fig. 3 Transient Thermal Response
DSL12AW
Document Number: DS31644 Rev. 2 - 2
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(A)
1
0.1
LLE
0.01
C
I,
0.001
0.1 1 10 100
V , COLLECTOR EMITTER VOLTAGE (V)
CE
Fig. 2 Safe Operating Area
R (t) = r(t) *
θ
JA
R = 188°C/W
P(pk)
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
t
θθJA
1
t
2
February 2011
© Diodes Incorporated
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