Diodes DSL12AW User Manual

Page 1
Features
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Ultra Small Surface Mount Package
Lead Free, RoHS Compliant (Note 1)
Halogen and Antimony Free "Green" Device (Note 2)
ESD rating: 400V-MM, 8KV-HBM
Top View
ADVANCE INFORMATION
Ordering Information
Part Number Case Packaging
DSL12AW-7 SOT-363 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
12V LOW V
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Weight: 0.006 grams (approximate)
1, 2, 5, 6
3
4
Top View
Device Schematic
PNP SURFACE MOUNT TRANSISTOR
CE(sat)
UL Flammability Classification Rating 94V-0
Solderable per MIL-STD-202, Method 208
654
123
Top View
Pin Out Configuration
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ZPB
DSL12AW
Document Number: DS31644 Rev. 2 - 2
ZPB = Product Type Marking Code YM = Date Code Marking
YM
Y = Year (ex: V = 2008) M = Month (ex: 9 = September)
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Page 2
θ
θ
P, P
OWER
PATIO
C
O
CTO
R CUR
RENT
T
R
T
T
HER
R
TANC
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
V V
V Collector Current - Continuous Peak Pulse Collector Current
I
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Power Dissipation (Note 4) @ TA = 25°C PD Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Operating and Storage Temperature Range
Notes: 3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Device mounted on FR-4 PCB, mounted on 25mmx25mm square pad 1oz coverage of copper
0.8
R
R
T
, T
J
CBO CEO EBO
I
C
CM
JA
JA
10
STG
-12 V
-12 V
-5 V
-2 A
-3 A
450 mW 275
°C/W 650 mW 192
-55 to +150
Pw = 100µs
°C/W
°C
ADVANCE INFORMATION
0.6
N (W)
0.4
Note 4
DISSI
Note 3
0.2
D
0
050100150200
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature
1
D = 0.7
E
D = 0.5 D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
D = 0.9
t , PULSE DURA TION TIME (s)
1
Fig. 3 Transient Thermal Response
DSL12AW
Document Number: DS31644 Rev. 2 - 2
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(A)
1
0.1
LLE
0.01
C
I,
0.001
0.1 1 10 100
V , COLLECTOR EMITTER VOLTAGE (V)
CE
Fig. 2 Safe Operating Area
R (t) = r(t) *
θ
JA
R = 188°C/W
P(pk)
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
t
θθJA
1
t
2
February 2011
© Diodes Incorporated
Page 3
)
)
)
C
O
CTO
R CUR
RENT
C
C
URR
T G
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current
BV BV BV
I
CBO
I I
CBO CEO EBO
CES EBO
-12 -35
-12 -20
-5 -8.3
⎯ ⎯ ⎯
V V
V
-1 -100 nA
-1 -100 nA
-1 -100 nA
IC = -100μA, IE = 0 IC = -10mA, IB = 0 IE = -100μA, IC = 0 VCB = -12V, IE = 0 VCE = -12V, V V
= -5V, IC = 0
EB
BE
= 0
ON CHARACTERISTICS
= -1.5V, IC = -0.5A
100
DC Current Gain (Note 5)
Collector-Emitter Saturation Voltage (Note 5)
Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Output Capacitance
V
CE(sat)
R V
V
C
Current Gain-Bandwidth Product
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
ADVANCE INFORMATION
h
FE
CE(sat BE(sat BE(on
obo
f
T
100 100
1.6
1.4
I = 5mA
(A)
1.2
1.0
0.8
0.6
LLE
0.4
C
I,
0.2
B
I = 4mA
B
I = 3mA
B
I = 2mA
B
I = 1mA
B
0
024681012
V , COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage
DSL12AW
Document Number: DS31644 Rev. 2 - 2
CE
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⎯ ⎯
175 165 160
-70
-95
-115
300
-160
-235
-290 290 m
-0.95 V
-0.95 V 65 pF
180
500 450
T = 150°C
400 350
AIN
300
EN
250 200 150
FE
h, D
100
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
50
0
0.001 0.01 0.1 1 I , COLLECTOR CURRENT (A)
Fig. 5 Typical DC Current Gain vs. Collector Current
C
V
CE
V
mV
= -1.5V, IC = -0.8A
V
CE
V
= -1.5V, IC = -1A
CE
I
= -0.5A, IB = -10mA
C
= -0.8A, IB = -16mA
I
C
I
= -1A, IB = -20mA
C
IC = -1A, IB = -20mA IC = -1A, IB = -20mA V
= -1.5V, IC = -1A
CE
VCB = -1.5V, f = 1.0MHz
MHz
VCE = -5V, IC = -100mA, f = 100MHz
V = -1.5V
CE
February 2011
© Diodes Incorporated
Page 4
C CUR
REN
T G
N
C
O
CTO
R
T
TER
T
TER TURN-O
OLTAG
MIT
TER
TURATIO
N VOLTAG
C
P
CITANC
T = 125°C
T = 85°C
A
T = 25°C
A
A
T = 150°C
A
500 450
400
AI
350 300 250
200 150
FE
h, D
100
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V = -1V
CE
-EMI
VOLTAGE (V)
LLE
SATURATION
CE(SAT)
V,
0.14
0.12
0.10
0.08
0.06
0.04
0.02
I/I = 10
CB
T = -55°C
A
50
0
0.001 0.01 0.1 1 I , COLLECTOR CURRENT (A)
Fig. 6 Typical DC Current Gain vs. Collector Current
1.2
E (V)
C
V = -5V
CE
1.0
0
0.001 0.01 0.1 1 I , COLLECTOR CURRENT (A)
Fig. 7 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Current
1.4
I = 10
/I
E (V)
CB
1.2
ADVANCE INFORMATION
N V
BE(ON)
V , BASE-EMI
0.8
0.6
0.4
0.2
0
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
0.001 0.01 0.1 1 I , COLLECTOR CURRENT (A)
C
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collect or Current
210
180
f = 1MHz
1.0
SA
0.8
0.6
0.4
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
0.2
0
0.001 0.01 0.1 1
BE(SAT)
V , BASE-E
I , COLLECTOR CURRENT (A)
C
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
150
E (pF)
120
90
A A
C
ibo
60
30
0
0246810
C
obo
V , REVERSE VOLTAGE (V)
R
Fig. 10 T ypical Capacitance Characteristics
DSL12AW
Document Number: DS31644 Rev. 2 - 2
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Page 5
Package Outline Dimensions
K
J
Suggested Pad Layout
ADVANCE INFORMATION
Z
A
B C
H
M
D
G
Y
X
L
F
C2
C2
Dimensions Value (in mm)
Z 2.5
C1
G 1.3 X 0.42
Y 0.6 C1 1.9 C2 0.65
SOT-363
Dim Min Max
A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40
M 0.10 0.22
0° 8°
α
All Dimensions in mm
DSL12AW
Document Number: DS31644 Rev. 2 - 2
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Page 6
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
ADVANCE INFORMATION
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
DSL12AW
Document Number: DS31644 Rev. 2 - 2
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