Features
IEC 61000-4-2 (ESD): Air ±15kV, Contact ±8kV
4 Channels of ESD Protection
Low Channel Input Capacitance of 1.0pF Typical
Typically Used at High Speed Ports such as USB 2.0,
IEEE1394, Serial ATA, DVI, HDMI, PCI
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
TSOT26
Top View
DRTR5V0U4TS
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
V
I/O 4
65 4
12 3
I/O 1
GND
Device Schematic
CC
I/O 3
I/O 2
Ordering Information (Note 4)
Product Compliance Marking Reel size(inches) Tape width(mm) Quantity per reel
DRTR5V0U4TS-7 AEC-Q101 TG2 7 8 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
<1000ppm antimony compounds.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2013 2014 2015 2016 2017 2018 2019
Code A B C D E F G
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DRTR5V0U4TS
Document number: DS36009 Rev. 4 - 2
TG2
TE1
YM
www.diodes.com
TG2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
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November 2013
© Diodes Incorporated
DRTR5V0U4TS
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
I
PP
V
ESD_Contact
V
ESD_Air
5 A 8/20µs, Per Figure 3
±8 kV Standard IEC 61000-4-2
±15 kV Standard IEC 61000-4-2
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
P
D
R
ΘJA
T
, T
J
STG
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage
Channel Leakage Current (Note 6, 7)
Reverse breakdown voltage
Forward Voltage
Clamping Voltage, Positive Transients
Clamping Voltage, Negative Transients
Dynamic Resistance
I/O to GND Capacitance
I/O to I/O Capacitance
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Measured from pin 1, 3, 4, 5 and 6 to GND.
8. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
following URL: http://www.diodes.com/destools/appnote_dnote.html
V
RWM
I
V
V
V
CL1
V
CL2
R
DYN
C
(I/O-GND)
C
(I/O-I/O)
R
BR
F
— — 5.5 V —
— 1 100 nA
6.0 — 9.0 V
— 0.8 — V
— 10.0 — V
— -1.7 — V
— 0.9 — Ω
— 1.0 1.5 pF
— 0.6 — pF
300
Note 5
100
250
75
N (mW)
200
%
IN
A
150
50
DISSI
LSE DE
100
D
50
EAK
25
PEAK POWER OR CURRENT
300 mW
417 °C/W
-65 to +150 °C
VR = 3V
IR = 1mA, from pin 5 to pin 2
IF = 8mA
IPP = 1A, tp = 8/20μs, I/O to GND
IPP = -1A, tp = 8/20μs, I/O to GND
IPP = 1A, tp = 8/20μs
V
V
= 0V, f = 1MHz
(I/O-GND)
= 0V, f = 1MHz
(I/O-I/O)
0
0125175
25 10050 75 150
T , AMBIENT TEMPERATURE ( C)
A
°
Figure 1 Power Derating Curve
DRTR5V0U4TS
Document number: DS36009 Rev. 4 - 2
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www.diodes.com
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
Figure 2 Pulse Derating Curve
150
175 200
November 2013
© Diodes Incorporated