Diodes DRTR5V0U4SL User Manual

Features
IEC 61000-4-2 (ESD): Air ±30kV, Contact ±25kV  4 Channels of ESD Protection  Low Channel Input Capacitance of 0.8pF Typical  Typically Used at High Speed Ports such as USB 2.0,
IEEE1394, Serial ATA, DVI, HDMI, PCI
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
SOT363
Top View
NC
CH 1
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Mechanical Data
Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
CH 4
CH 3
65 4
12 3
CH 2
Device Pinout
GND
Pin 1 Pin 2
Pin 3
Device Schematic
DRTR5V0U4SL
Pin 5
Pin 4
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
DRTR5V0U4SL-7 Standard TG5 7 8 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2013 2014 2015 2016 2017 2018 2019
Code A B C D E F G
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
TG1
TG5
YM
DRTR5V0U4SL
Document number: DS36222 Rev. 2 - 2
www.diodes.com
TG5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September)
1 of 5
December 2013
© Diodes Incorporated
t
r
(
)
(
)
P
P
OWER
P
T
O
P
P
U
RAT
G
O
F
DRTR5V0U4SL
Maximum Ratings (@T
= +25°C, unless otherwise specified)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
I
PP
V
ESD_Contac
V
ESD_Ai
5 A 8/20 µs, Per Figure 2
±25 kV Standard IEC 61000-4-2
±30 kV Standard IEC 61000-4-2
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range
P
D
R
θJA
T
, T
J
STG
Electrical Characteristics (@T
= +25°C, unless otherwise specified)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage Channel Leakage Current (Note 6, 7) Reverse breakdown voltage
Clamping Voltage, Positive Transients
Forward Voltage
V
RWM
I
V
V
V
R
BR
CL
F
— — 1 10 nA
7.0 — 9.5 V — 10.5 — V — 12.5 — V — 0.8 — V
— 5.5 V
— 0.8 —
Dynamic Resistance
R
DYN
— 0.6 —
I/O to GND Capacitance
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Measured from pin 1, 2, 4, or 5 to GND.
8. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the following URL: http://www.diodes.com/destools/appnote_dnote.html.
C
I/O-GND
— 0.8 1.2 pF
200
175
Note 5
100
200 mW 625
-65 to +150
VR = 2.5V IR = 1mA, from CH to GND I
= 1A, tp = 8/20μs
PP
I
= 3A, tp = 8/20μs
PP
IF = 1mA
= 10A to 20A, tp = 100ns, I/O
I
TLP
to GND
= 10A to 20A, tp = 100ns,
I
TLP
GND to I/O V
= 2.5V, f = 1MHz
I/O-GND
C/W
C
N (mW) I
A
150
125
100
75
%
IN
50
DISSI
75
,
50
D
LSE DE
25
EAK
PEAK POWER OR CURRENT
25
0
0
25
50 75
T , AMBIENT TEMPERATURE ( C)
A
125 175
100
150
°
Figure 1 Power Derating Curve
DRTR5V0U4SL
Document number: DS36222 Rev. 2 - 2
2 of 5
www.diodes.com
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
Figure 2 Pulse Derating Curve
175 200
150
December 2013
© Diodes Incorporated
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