Diodes DRD-xxxx-W User Manual
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Features
• Epitaxial Planar Die Construction
• One Transistor and One Sw
• Lead Free By
• "Green" Dev
Design/RoHS Compliant (Note 1)
ice (Note 2)
itching Diode in One Package
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. "Green" Molding
Compound. UL Flammability
• Moisture Sensitivity
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 8
• Ordering Information: See Page 8
• Weight: 0.008 grams (approximate)
P/N R1 (NOM) R2 (NOM)
DRDNB16W
DRDPB16W
DRDNB26W
DRDPB26W
: Level 1 per J-STD-020D
Classification Rating 94V-0
1K
1K
220
220
10K
10K
4.7K
4.7K
42
K
J
DRDN010W/
DRDN005W
A
H
D
DRD (xxxx) W
COMPLEX ARRAY FOR RELAY DRIVERS
B C
L
F
DRDP006W
M
R2
R1
DRDNB16W/
DRDNB26W
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α
All Dimensions in mm
DRDPB16W/
DRDPB26W
R1
⎯
0°
0.10
8°
R2
Maximum Ratings, Total Device @T
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Temperature Range
Maximum Ratings, DRDN010W NPN Transistor @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 3)
Maximum Ratings, DRDN005W NPN Transistor @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous (Note 3)
Notes: 1. No purposefully added lead.
DS30573 Rev. 10 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on page 9 or our website at http://www.diodes.com/datasheets/ap02001.pdf.
= 25°C unless otherwise specified
A
P
D
R
JA
θ
TJ, T
STG
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
I
C
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
I
C
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diodes.com
200 mW
625
-55 to +150
45 V
18 V
5 V
1000 mA
80 V
80 V
4.0 V
500 mA
°C/W
°C
DRD (xxxx) W
© Diodes Incorporated
Maximum Ratings, DRDP006W PNP Transistor @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 3)
V
V
V
CBO
CEO
EBO
I
C
Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor @T
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
V
CC
V
IN
I
C
Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor @T
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
V
CC
V
IN
I
C
Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor @T
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
V
CC
V
IN
I
C
-60 V
-60 V
-5.0 V
-600 mA
= 25°C unless otherwise specified
A
50 V
-5 to +10 V
600 mA
= 25°C unless otherwise specified
A
50 V
-5 to +5 V
600 mA
= 25°C unless otherwise specified
A
-50 V
+5 to -10 V
600 mA
Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor @T
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
Maximum Ratings, Switching Diode @T
= 25°C unless otherwise specified
A
V
CC
V
IN
I
C
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 3)
Average Rectified Output Current (Note 3)
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
DS30573 Rev. 10 - 2
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2 of 9
V
V
V
V
R(RMS)
I
RM
RRM
RWM
V
I
FM
I
O
FSM
R
= 25°C unless otherwise specified
A
-50 V
+5 to -5 V
-600 mA
100 V
75 V
53 V
500 mA
250 mA
4.0
2.0
© Diodes Incorporated
A
DRD (xxxx) W
Electrical Characteristics, DRDN010W NPN Transistor @T
Characteristic Symbol Min Max Unit Test Condition
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Current Gain-Bandwidth Product
Capacitance
h
V
CE(SAT)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
f
C
FE
obo
T
150 800
⎯
45
18
5
⎯
⎯
100
⎯
0.5 V
⎯
⎯
⎯
1
1
⎯
8 pF
Electrical Characteristics, DRDN005W NPN Transistor @T
Characteristic Symbol Min Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
h
V
CE(SAT)
V
BE(SAT)
f
FE
T
80
80
4.0
⎯
⎯
100
⎯
⎯
100
= 25°C unless otherwise specified
A
⎯
IC = 100mA, V
CE
= 1V
IC = 300mA, IB = 30mA
V
I
= 100μA, IE = 0
C
V
I
= 1mA, IB = 0
C
V
I
= 100μA, IC = 0
E
μA
V
= 40V, IE = 0
CB
μA
V
= 4V, IC = 0
EB
MHz
VCE = 10V, IC = 50mA, f = 100MHz
VCB = 10V, IE = 0, f = 1MHz
= 25°C unless otherwise specified
A
⎯
⎯
⎯
100 nA
100 nA
⎯ ⎯
0.25 V
1.2 V
⎯
V
V
V
MHz
IC = 100μA, IE = 0
IC = 1.0mA, IB = 0
IE = 100μA, IC = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
V
= 60V, IBO = 0V
CE
V
= 80V, IBO = 0V
CE
IC = 10mA, VCE = 1.0V
IC = 100mA, V
IC = 100mA, IB = 10mA
IC = 100mA, VCE = 1.0V
VCE = 2.0V, IC = 10mA,
f = 100MHz
CE
= 1.0V
Electrical Characteristics, DRDP006W PNP Transistor @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Current Gain-Bandwidth Product
Capacitance
h
V
CE(SAT)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
C
FE
f
obo
T
100 300
-0.4 V
⎯
-60
-60
-5
⎯
200
⎯
⎯
⎯
⎯
-10 nA
⎯
8 pF
⎯
IC = -150mA, V
IC = -150mA, IB = -15mA
V
I
= -10μA, IE = 0
C
V
I
= -10mA, IB = 0
C
V
I
= -10μA, IC = 0
E
V
= -50V, IE = 0
CB
MHz
VCE = -20V, IC = -50mA, f = 100MHz
VCB = -10V, IE = 0, f = 1MHz
Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor @T
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
DS30573 Rev. 10 - 2
V
V
V
I
O(off)
l(off)
l(on)
O(on)
I
l
G
l
f
T
0.3
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⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
56
⎯
⎯ ⎯ ⎯
200
0.3V V
V
2.0 V
7.2 mA
0.5
μA
MHz
⎯
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 20mA
IO/Il = 50mA/2.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 50mA
VCE = 10V, IE = 5mA, f = 100MHz
= -10V
CE
= 25°C unless otherwise specified
A
DRD (xxxx) W
© Diodes Incorporated
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