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Features
• Epitaxial Planar Die Construction
• One Transistor and One Sw
• Lead Free By
• "Green" Dev
Design/RoHS Compliant (Note 1)
ice (Note 2)
itching Diode in One Package
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. "Green" Molding
Compound. UL Flammability
• Moisture Sensitivity
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 8
• Ordering Information: See Page 8
• Weight: 0.008 grams (approximate)
P/N R1 (NOM) R2 (NOM)
DRDNB16W
DRDPB16W
DRDNB26W
DRDPB26W
: Level 1 per J-STD-020D
Classification Rating 94V-0
1K
1K
220
220
10K
10K
4.7K
4.7K
42
K
J
DRDN010W/
DRDN005W
A
H
D
DRD (xxxx) W
COMPLEX ARRAY FOR RELAY DRIVERS
B C
L
F
DRDP006W
M
R2
R1
DRDNB16W/
DRDNB26W
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25 α
All Dimensions in mm
DRDPB16W/
DRDPB26W
R1
⎯
0°
0.10
8°
R2
Maximum Ratings, Total Device @T
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Temperature Range
Maximum Ratings, DRDN010W NPN Transistor @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 3)
Maximum Ratings, DRDN005W NPN Transistor @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous (Note 3)
Notes: 1. No purposefully added lead.
DS30573 Rev. 10 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on page 9 or our website at http://www.diodes.com/datasheets/ap02001.pdf.
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 3)
V
V
V
CBO
CEO
EBO
I
C
Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor@T
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
V
CC
V
IN
I
C
Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor@T
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
V
CC
V
IN
I
C
Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor@T
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
V
CC
V
IN
I
C
-60 V
-60 V
-5.0 V
-600 mA
= 25°C unless otherwise specified
A
50 V
-5 to +10 V
600 mA
= 25°C unless otherwise specified
A
50 V
-5 to +5 V
600 mA
= 25°C unless otherwise specified
A
-50 V
+5 to -10 V
600 mA
Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor@T
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
Maximum Ratings, Switching Diode@T
= 25°C unless otherwise specified
A
V
CC
V
IN
I
C
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 3)
Average Rectified Output Current (Note 3)
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Current Gain-Bandwidth Product
Capacitance
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Current Gain-Bandwidth Product
Capacitance
h
V
CE(SAT)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
C
FE
f
obo
T
100 300
-0.4 V
⎯
-60
-60
-5
⎯
200
⎯
⎯
⎯
⎯
-10 nA
⎯
8 pF
⎯
IC = -150mA, V
IC = -150mA, IB = -15mA
V
I
= -10μA, IE = 0
C
V
I
= -10mA, IB = 0
C
V
I
= -10μA, IC = 0
E
V
= -50V, IE = 0
CB
MHz
VCE = -20V, IC = -50mA, f = 100MHz
VCB = -10V, IE = 0, f = 1MHz
configuration with built-in bias resistors (low R1)
R1
DRDP006W
Application Example: DRDP006W current source
1k
DRDPB16W
Application Example: DRDPB16W current source
configuration with built-in bias resistors
R2
RL
Relay
configuration, bias resistors not included
10k
Ω
Ω
RL
Relay
DRDNB16W
1k
Ω
10k
Ω
Application Example: DRDNB16W current
sink configuration with built-in bias resistors
4.7k
Ω
220
Ω
DRDPB26W
Application Example: DRDPB26W current source
configuration with built-in bias resistors (low R1)
Relay
RL
RL
Relay
Suggested Pad Layout
G
Z
Y
X
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.