Diodes DRDNB21D User Manual

Features and Benefits

• Epitaxial Planar Die Construction

• Two Pre-Biased Transistors and Two Switching Diodes,

Internally Connected in One Package

• Ideally Suited for Automated Assembly Processes

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

R1 = R3 = 2.2kΩ (nominal)
R2 = R4 = 47kΩ (nominal)

Top View

6

R1

1

R2

Top View

DRDNB21D

COMPLEX ARRAY FOR DUAL RELAY DRIVER

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic. "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.0062 grams (approximate)

R4

R3

4

1
6

R2 R4

3

D1

5

Q1 Q2

2

D2

R3R1

Device Circuit

5

2

3
4

Ordering Information (Note 3)

Device Packaging Shipping

DRDNB21D-7 SOT-363 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, visit our website at http://www.diodes.com.

Marking Information

RD08

RD08 = Product Type Marking Code
YM = Date Code Marking
Y = Year (e.g. T = 2006)

YM

M = Month (e.g. 1 = January)

Date Code Key

Year 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016

Code S T U V W X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DRDNB21D

Document number: DS30756 Rev. 6 - 2

1 of 7

www.diodes.com

February 2011

© Diodes Incorporated

θ

)

)

)

)

)

Δ

Δ

Maximum Ratings, Total Device @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Junction Temperature Range

T

J

Maximum Ratings, Pre-Biased NPN Transistor @T

Characteristic Symbol Value Unit

Collector-Emitter Voltage
Base-Emitter Voltage
Output Current
Peak Collector Current

Maximum Ratings, Switching Diode @T

Characteristic Symbol Value Unit

Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage
Forward Continuous Current (Note 4)
Average Rectified Output Current (Note 4)
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs

@ t = 1.0s

= 25°C unless otherwise specified

A

V
V

V

P

D

R

JA

, T

STG

= 25°C unless otherwise specified

A

V

CC

V

in

I

O

I

CM

V

RM
RRM
RWM

V

R

R(RMS

I

FM

I

O

I

FSM

200 mW
625

-55 to +150

50 V

-5 to +12 V
100 mA
100 mA

100 V

75 V

53 V
500 mA
250 mA

4.0

1.0

DRDNB21D

°C/W

°C

A

Electrical Characteristics, Pre-Biased NPN Transistor @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

V

Input Voltage
Output Voltage

Input Current
Output Current
DC Current Gain
Input Resistor Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*

* Transistor - For Reference Only

l(off

V

l(on

V

O(on

I

l

I

O(off

G

l

R1

R2/R1

f

⎯

T

Electrical Characteristics, Switching Diode @T

0.5

⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯

80

-30

-20

= 25°C unless otherwise specified

A

⎯ ⎯

1.1 V

0.3 V

3.6 mA

0.5 uA

⎯ ⎯ ⎯

+30 % -

⎯

+20 % -

⎯

250

⎯

V

VCC = 5V, IO = 100μA
VO = 0.3V, IO = 5mA
IO/Il = 50mA/0.25mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 10mA

MHz

VCE = 10V, IE = 5mA, f = 100MHz

Characteristic Symbol Min Max Unit Test Condition

Reverse Breakdown Voltage (Note 5)

Forward Voltage

Reverse Current (Note 5)

Total Capacitance
Reverse Recovery Time

Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com

5. Short duration pulse test used to minimize self-heating effect.

DRDNB21D

Document number: DS30756 Rev. 6 - 2

V

(BR)R

VF

IR

CT ⎯

trr

www.diodes.com

75

0.62

⎯
⎯
⎯

⎯

⎯

2 of 7

⎯

0.72

0.855

1.0

1.25

2.5
50
30
25

4.0 pF

4.0 ns

V

IR = 10μA
IF = 5.0mA

IF = 10mA

V

IF = 100mA
IF = 150mA

VR = 75V

μA

VR = 75V, TJ = 150°C

μA
μA

VR = 25V, TJ = 150°C

nA

VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA, I

= 0.1 x IR, RL = 100Ω

rr

February 2011

© Diodes Incorporated

P, P

OWER

P

T

O

C

O

CTO

R

T

TER

C

C

U

R

R

T G

Device Characteristics

250

200

N (mW)
I

150

A

DISSI

100

D

50

0

0

T , AMBIENT TEMPERATURE (°C)

A

Fig. 1 Power Derating Curve (Total Device)

120

Note 4

1608040

DRDNB21D

200

Pre-Biased NPN Transistor Elements

1

I/I = 10

CB

-EMI

0.1

T = 25C

°

A

T = 75C

°

A

T = -25C

°

A

LLE

0.01

SATURATION VOLT AGE (V)

CE(SAT)

V,

0.001
0

10

I , COLLECTOR CURRENT (mA)

C

20

Fig. 2 Typical V vs. I

30

CE(SAT) C

40

50

DRDNB21D

Document number: DS30756 Rev. 6 - 2

3 of 7

www.diodes.com

1,000

AIN

EN

100

FE

h, D

10

110100

I , COLLECTOR CURRENT (mA)

C

Fig. 3 Typical DC Current Gain

February 2011

© Diodes Incorporated