Diodes DPLS160V User Manual

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DPLS160V

Features

• Epitaxial Planar Die Construction

• Complementary NPN Type Available (DNLS160V)

• Surface Mount Package Suited for Automated Assembly

• Ultra Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 1)

• "Green Device" (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, “Green” Molding

NEW PRODUCT

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.003 grams (approximate)

Maximum Ratings @T

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

LOW V

CE(SAT)

654

123

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

PNP SURFACE MOUNT TRANSISTOR

SOT-563

1, 2, 5, 6

3

4

-80 V

-60 V

-5 V

-1 A

-2 A

-300 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ T
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

DS31251 Rev. 3 - 2 1 of 4

2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

= 25°C

A

T

www.diodes.com

PD

R

JA

θ

, T

J

STG

300 mW
417

-55 to +150

°C/W

°C

DPLS160V

© Diodes Incorporated

P, P

OWER

P

TIO

N

C

O

C

TOR CUR

REN

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage -80
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage

Collector Cutoff Current
Collector Cutoff Current

Emitter Cutoff Current

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I
I

I

ON CHARACTERISTICS (Note 4)

DC Current Gain

Collector-Emitter Saturation Voltage

NEW PRODUCT

Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage

V

CE(SAT)

R

CE(SAT)

V

BE(SAT)

V

BE(ON)

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

Current Gain-Bandwidth Product

SWITCHING CHARACTERISTICS

Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time

Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

400

⎯ ⎯

-60

-5

CBO

CES
EBO

⎯ ⎯

⎯ ⎯
⎯ ⎯

200

FE

100

150

h

⎯

⎯
⎯

⎯

⎯

⎯

⎯

obo

f

T

t

on

t

⎯

d

t

⎯

r

t

off

t

⎯

s

t

⎯

f

150 220

⎯

⎯

V

IC = -100μA, IE = 0

⎯ ⎯
⎯ ⎯

-100

-50

-100 nA

-100 nA

325
250
180

-90

-90

-160

⎯

⎯
⎯

-160

-175

-330

160 330 mΩ

-0.95 -1.1 V

-0.82 -0.9 V

10 15 pF

⎯

36
12

24
163
132

31

⎯
⎯
⎯
⎯
⎯
⎯

V

IC = -10mA, IB = 0

V

IE = -100μA, IC = 0

nA

V

μA

V
VCE = -60V, V
V

V

V

V
V
I

mV

I
I
IC = -1A, IB = -100mA
IC = -1A, IB = -50mA
V

VCB = -10V, f = 1.0MHz

MHz

VCE = -10V, IC = -50mA, f = 100MHz

ns
ns
ns

V
I

ns
ns
ns

1.5

= -60V, IE = 0

CB

= -60V, IE = 0, TA = 150°C

CB

= -5V, IC = 0

EB

= -5V, IC = -1mA

CE

= -5V, IC = -500mA

CE

= -5V, IC = -1A

CE

= -100mA, IB = -1mA

C

= -500mA, IB = -50mA

C

= -1A, IB = -100mA

C

= -5V, IC = -1A

CE

= -10V

CC

= -0.5A, IB1 = IB2 = -25mA

C

BE

= 0

350

I = -10mA

B

I = -8mA

B

I = -6mA

B

I = -4mA

B

I = -2mA

B

(mW)

A

DISSI

300

250

200

150

100

D

1.2

(A)

0.9

0.6

LLE

C

-I ,

0.3

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75

100 125

150

175

200

Fig. 1 Maximum Power Dissipation vs.

Ambient Temperat ure

0

01234

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage

5

DS31251 Rev. 3 - 2 2 of 4

www.diodes.com

DPLS160V

© Diodes Incorporated

C CUR

REN

T

G

N

T

TER

TURATIO

OLTAG

600

AI

400

200

FE

h, D

0.4

0.3

0.2

0.1

SATURATION VOLTAGE (V)

CE(SAT)

-V , COLLECTOR EMITTER

0

NEW PRODUCT

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

Fig. 3 Typical DC Current Gain vs. Collector Current

BE(ON)

-V , BASE EMITTER TURN-ON VOLTAGE (V)

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

120

0

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

C

1.2

E (V)

1.0

N V

0.8

T = -55°C

A

0.6

T = 25°C

A

SA

T = 85°C

A

0.4

T = 150°C

A

I/I = 20

CB

0.2

0

0.001 0.01 0.1 1 10

BE(SAT)

C

-V , BASE-EMI

-I , COLLECTOR CURRENT (A)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

250

100

C

ibo

f = 1MHz

200

80

150

60

100

40

CAPACITANCE (pF)

C

obo

20

0

0.01 0.1 1 10 100
V , REVERSE VOLTAGE (V)

R

Fig. 7 Typical Total Capacitance

50

0

T

f , CURRENT GAIN-BANDWIDTH PRODUCT (MHz)

0102030405060708090100

I , COLLECTOR CURRENT (mA)

C

Fig. 8 Typical Gain-Bandwidth Product

vs. Collector Current

DS31251 Rev. 3 - 2 3 of 4

www.diodes.com

V = -10V

CE

f = 100MHz

DPLS160V

© Diodes Incorporated

Ordering Information (Note 5)

Device P ackaging Shipping

DPLS160V-7 SOT-563 3000/Tape & Reel

Notes: 5. For packaging details, go to our website at http://www. diodes.com/datasheets/ap02007.pdf.

Marking Information

g Code

Date Code Key

Year

NEW PRODUCT

Code V W X Y Z A B C

Jan F Mar A May J J A Sep O Nov Dec Month eb pr un ul ug ct

Code 1 2 3 4 5 6 7 8 9 O N D

PK1 = Product Type Markin

PK1

2008 2009 2010 2011 2012 2013 2014 2015

YM

YM = Date Code Markin
Y = Year ex: V = 2008
M

= Month ex: 9 = September

g

Package Outline Dimensions

K

A

Dim Min Max Typ

B

C

D

G

M

H

L

SOT-563

A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50

G 0.90 1.10 1.00

H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20

M 0.10 0.18 0.11

All Dimensions in mm

Suggested Pad Layout (in mm)

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

2.2

1.2

0.5

0.375

0.5

0.5

1.7

IMPORTANT NOTICE

LIFE SUPPORT

DS31251 Rev. 3 - 2 4 of 4

www.diodes.com

DPLS160V

© Diodes Incorporated