Page 1
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• DIOFET utilize a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low R
• Low V
construction
• Low Q
diode switching losses
• Low gate capacitance (Q
through or cross conduction currents at high frequencies
• Avalanche rugged – I
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
– minimizes conduction loss
DS(on)
– reducing the losses due to body diode
SD
– lower Qrr of the integrated Schottky reduces body
rr
) ratio – reduces risk of shoot-
g/Qgs
and EAR rated
AR
D2
D2
G1
S1
Top View
Top View
Internal Schematic
DMS3019SSD
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.072 grams (approximate)
Q1 Q2
G2
S2/D1
S2/D1
S2/D1
D
1
G
1
S
1
Integrat ed Schottky Diode
G
2
N-Channel MOSFETN-Channel MOSFET +
D
2
S
2
Ordering Information (Note 3)
Part Number Case Packaging
DMS3019SSD-13 SO-8 2500 / Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
Top View
8 5
S3019SD
WW
YY
1 4
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Logo
Part no.
Week: 01 ~ 53
Y ear: “09” = 2009
October 2010
© Diodes Incorporated
Page 2
Maximum Ratings – Q1 @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
T
Continuous Drain Current (Note 4) VGS = 10V
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 5) VGS = 4.5V
Pulsed Drain Current (Note 6)
Avalanche Current (Notes 6 & 7)
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH
Steady
State
Steady
State
Steady
State
= 25°C
A
T
= 70°C
A
= 25°C
T
A
= 70°C
T
A
T
= 25°C
A
= 70°C
T
A
DMS3019SSD
V
DSS
V
GSS
I
D
I
D
I
D
I
DM
I
AR
E
AR
30 V
±12 V
7.0
5.6
9.0
7.0
8.0
6.5
A
A
A
40 A
13 A
25.4 mJ
Maximum Ratings – Q2 @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) VGS = 10V
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
Steady
Steady
Pulsed Drain Current (Note 6)
Avalanche Current (Notes 6 & 7)
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.1mH
State
State
State
T
= 25°C
A
T
= 70°C
A
T
= 25°C
A
= 70°C
T
A
T
= 25°C
A
T
= 70°C
A
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
AR
E
AR
30 V
±20 V
5.7
4.6
7.0
5.6
6.0
4.7
A
A
A
40 A
16 A
12.8 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T
= 25°C (Note 4) R
A
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
= 25°C (Note 5) R
A
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. The value in any given application depends on the user’s specific
board design. Device contains two active die running at equal power.
5. Device mounted on 1 inch x 1 inch FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Device contains two active die running
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
at equal power.
6. Repetitive rating, pulse width limited by junction temperature.
7. I
and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
AR
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2 of 10
P
D
θJA
P
D
θJA
T
, T
J
STG
1.19 W
107 °C/W
1.79 W
70 °C/W
-55 to +150 °C
October 2010
© Diodes Incorporated
Page 3
)
g
g
g
r
R
C
URRENT
R
C
URR
T
DMS3019SSD
Electrical Characteristics – Q1 @ T
= 25°C unless otherwise stated
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
C
C
R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Q
Q
t
D(on)
Turn-On Rise Time
Turn-Off Delay Time
t
D(off)
Turn-Off Fall Time
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
30
V = 4.5V
GS
25
(A)
20
V = 4.0V
GS
V = 3.5V
GS
V = 3.0V
GS
DSS
fs
SD
iss
oss
rss
t
t
f
30 - - V
- - 0.1 mA
- - ±100 nA
1.0 - 2.4 V
-
|
- 5 - S
- 0.4 1 V
- 1932 -
- 154 -
- 121 -
- 2.7 -
10
12
15
18
- 18.1 -
- 42.0 -
s
d
- 4.5 -
- 4.0 -
- 6.16 -
- 7.22 -
- 36.76 -
- 5.38 -
VGS = 0V, ID = 1mA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = 250μA
= 10V, ID = 9A
V
mΩ
GS
VGS = 4.5V, ID = 7A
VDS = 5V, ID = 9A
VGS = 0V, IS = 1A
= 15V, VGS = 0V,
V
DS
pF
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 4.5V, ID = 9A
nC
ns
= 15V, VGS = 10V, ID = 9A
V
DS
= 10V, VDS = 15V,
V
GS
= 3Ω, RL = 1.7Ω
R
G
30
V = 5V
25
(A)
20
DS
EN
15
AIN
D
I, D
10
V = 2.5V
5
V = 2.0V
0
GS
V = 2.2V
0 0.5 1 1.5 2
V , DRAIN-SOURCE VOL TAGE (V)
DS
Fig. 1 Typical Output Character i st ic
GS
GS
AIN
D
I, D
15
10
5
0
V = 150°C
GS
V = 125°C
GS
V = 85°C
GS
0 1 1.5 2 2.5 30.5
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristic
V = 25°C
GS
V = -55°C
GS
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
3 of 10
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October 2010
© Diodes Incorporated
Page 4
R
R
OUR
CE ON-R
TANC
R
R
OUR
CE ON-R
TANC
R
RAIN-SOUR
CE O
N-R
TAN
C
R
RAIN-SOUR
CE O
N-R
TAN
C
G
T
T
H
RESH
O
O
TAG
OUR
C
CUR
REN
T
DMS3019SSD
0.05
Ω
E ( )
0.04
ESIS
0.03
0.02
V = 4.5V
V = 10V
GS
GS
AIN-S
0.01
, D
DS(ON)
0
0102015 25 30
5
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.04
Ω
E ( )
V = 4.5V
GS
0.03
ESIS
0.02
AIN-S
0.01
, D
DS(ON)
0
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain C urrent an d Tem per ature
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
1.6
V = 4.5V
GS
I = 10A
D
Ω
Ω
E ( )
E ( )
0.03
1.4
V = 10V
GS
I = 20A
D
ESIS
ESIS
0.02
1.2
V = 4.5V
GS
I = 10A
1.0
DSON
R , DRAIN-SOURCE
0.8
ON-RESISTANCE (NORMALIZED)
0.6
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 5 On - R esistan ce Variatio n w it h Tem perature
3.0
E (V)
2.5
L
2.0
LD V
I = 100mA
1.5
D
, D
, D
0.01
DSON
DSON
(A)
0
20
16
12
D
V = 10V
GS
I = 20A
D
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 6 On-Resistance Variation with T emperature
T = 25°C
A
E
8
E
1.0
A
0.5
GS(TH)
V,
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
S
I, S
4
0
0.2
0 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
4 of 10
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October 2010
© Diodes Incorporated
Page 5
C, CAPACITAN
C
F
GE CUR
REN
T
GAT
OUR
C
OLTAG
DMS3019SSD
10,000
)
1,000
E (p
C
iss
f = 1MHz
10,000
1,000
(µA)
T = 125°C
A
T = 85°C
A
C
oss
C
100
10
0 5 10 15 20 25 30
rss
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Total Capacitance
10
V = 15V
E (V)
E V
E-S
GS
V,
8
6
4
2
DS
I = 12.7A
D
100
10
DSS
I, LEAKA
1
0102030
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
T = 25°C
A
0
0 5 10 15 20 25 30 35 40 45
Q , TOT AL GATE CHARGE (nC)
g
Fig. 11 Gate-Charge Characteris tics
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
5 of 10
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October 2010
© Diodes Incorporated
Page 6
)
g
g
g
r
R
C
U
R
RENT
R
C
URRENT
DMS3019SSD
Electrical Characteristics – Q2 @ T
= 25°C unless otherwise stated
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
C
C
R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Q
Q
t
D(on)
Turn-On Rise Time
Turn-Off Delay Time
t
D(off)
Turn-Off Fall Time
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
30
V = 10V
GS
25
V = 4.5V
GS
(A)
20
V = 4.0V
GS
DSS
fs
SD
iss
oss
rss
t
t
f
30 - - V
- - 1.0 μA
- - ±100 nA
1.0 - 2.4 V
-
|
- 2.5 - S
- 0.65 1.0 V
- 478.9 -
- 96.7 -
- 61.4 -
0.4 1.1 1.6
15
25
23
33
- 5.0 -
- 10.5 -
s
d
- 1.8 -
- 1.6 -
- 2.9 -
- 7.9 -
- 14.6 -
- 3.1 -
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250μA
= 10V, ID = 10A
V
mΩ
GS
VGS = 4.5V, ID = 7.5A
VDS = 5V, ID = 10A
VGS = 0V, IS = 1A
= 15V, VGS = 0V,
V
DS
pF
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 4.5V, ID = 10A
nC
ns
= 15V, VGS = 10V, ID = 10A
V
DS
= 10V, VDS = 15V,
V
GS
= 3Ω, RL = 1.5Ω
R
G
20
V = 5V
DS
15
(A)
15
AIN
10
D
I, D
5
V = 2.5V
GS
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN-SOURCE VOL TAGE (V)
DS
Fig. 12 Typical Output Characteristic
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
V = 3.5V
GS
V = 3.0V
GS
10
AIN
D
I, D
5
0
6 of 10
www.diodes.com
V = 150°C
GS
V = 125°C
GS
V = 85°C
GS
V = 25°C
GS
V = -55°C
GS
0 0.5 1 1.5 2 2.5 3 3.5 4
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 13 Typical Transfer Characteristic
October 2010
© Diodes Incorporated
Page 7
R
R
OUR
CE ON-R
TANC
R
RAIN-SOUR
CE O
N
R
TAN
C
OUR
C
CUR
R
N
T
DMS3019SSD
Ω
E ( )
ESIS
AIN-S
, D
0.05
0.04
0.03
0.02
0.01
V = 4.5V
GS
V = 10V
GS
Ω
E ( )
ESIS
-
, D
0.04
0.03
0.02
0.01
V = 10V
GS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
DS(ON)
0
0102015 25 30
5
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 14 Typic al On-Resistanc e
vs. Drain C urrent an d G at e Vol tage
1.7
V = 4.5V
1.5
GS
I = 5A
D
1.3
1.1
0.9
DSON
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.7
0.5
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 16 On-Resistance V ariation with Temperature
2.0
1.8
1.6
I = 1mA
1.4
1.2
I = 250µA
D
D
V = 10V
GS
I = 10A
D
DS(ON)
0
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Fig. 15 Typical On-Resistance
vs. Drain Current and Temperature
0.06
Ω
0.05
0.04
V = 4.5V
GS
I = 5A
0.03
D
0.02
V = 10V
GS
I = 10A
D
0.01
DSON
R , DRAIN- S OURCE ON -RESISTANCE ( )
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 17 On-Resistance Variation with T emperature
20
18
16
(A)
14
E
12
T = 25°C
A
10
E
8
1.0
0.8
GS(TH)
V , GATE THRESHOLD VOLT AGE (V)
0.6
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 18 Gate Thr eshold Varia t ion vs. Ambient Temperature
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
7 of 10
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6
S
I, S
4
2
0
0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 19 Diode Forward Voltage vs. Curr ent
October 2010
© Diodes Incorporated
Page 8
C, CAPACITANC
F
GE CUR
RENT
GAT
OUR
C
OLTAG
T
R
T
T
HER
R
TANC
DMS3019SSD
1,000
C
iss
f = 1MHz
)
10,000
1,000
(nA)
T = 150°C
A
E (p
100
10
0 5 10 15 20 25 30
C
oss
C
rss
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 20 Typical Total Capacitance
10
8
E (V)
V = 15V
DS
I = 10A
D
E V
E-S
6
4
T = 125°C
A
100
T = 85°C
A
10
DSS
I , LEAKA
1
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 21 Typical Leakage Current
vs. Drain-S ource Voltage
T = 25°C
A
2
GS
V,
0
02 4 6 81012
Q , TOT AL GATE CHARGE (nC)
g
Fig. 22 Gate-Charge Characteristics
1
E
D = 0.7
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
ANSIEN
r(t),
0.01
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
θ
JA
R = 113°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
0.001
0.00001 0.0001
0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)
1
Fig. 23 Transient Thermal Response
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
8 of 10
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October 2010
© Diodes Incorporated
Page 9
A
A
A
A
X
Y
Package Outline Dimensions
E1
E
A1
A2
A3
A
e
b
D
h
Detail ‘A’
°
45
L
0.254
Gauge Plane
Seating Plane
7°~9
°
Detail ‘A’
SO-8
Dim Min Max
- 1.75
1 0.10 0.20
2 1.30 1.50
3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
0° 8°
θ
All Dimensions in mm
DMS3019SSD
Suggested Pad Layout
X
Y
C2
C1
DimensionsValue (in mm)
0.60
1.55
C1 5.4
C2 1.27
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
9 of 10
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October 2010
© Diodes Incorporated
Page 10
DMS3019SSD
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
IMPORTANT NOTICE
LIFE SUPPORT
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
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October 2010
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