Diodes DMS2220LFDB User Manual

G

P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR

Features

• Low On-Resistance

• 95mΩ @V

• 120mΩ @V

• 86mΩ (typ) @V

• Low Gate Threshold Voltage, -1.3V Max

• Fast Switching Speed

• Low Input/Output Leakage

• Incorporates Low V

• Low Profile, 0.5mm Max Height

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

= -4.5V

GS

= -2.5V

GS

= -1.8V

GS

Super Barrier Rectifier (SBR)

F

U-DFN2020-6

Type B

Bottom View

Mechanical Data

• Case: U-DFN2020-6 Type B

• Case Material: Molded Plastic, “Green” Molding Compound. UL

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

• Weight: 0.0065 grams (approximate)

ANCD

123

Q1

D1

456

S

Top View

Internal Schematic

K

DMS2220LFDB

SUPER BARRIER RECTIFIER

Flammability Classification Rating 94V-0

e4

per MIL-STD-202, Method 208

A

KD

Bottom View

Pin Configuration

NC

D

S

GK

®

Ordering Information (Note 4)

Part Number Case Packaging

DMS2220LFDB-7 U-DFN2020-6 Type B 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SBR is a registered trademark of Diodes Incorporated.

ME

DMS2220LFDB

Document number: DS31546 Rev. 9 - 2

ME = Marking Code YM = Date Code Marking Y = Year (ex: V = 2008)

YM

M = Month (ex: 9 = September) Dot denotes Pin 1

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January 2013

)

(BR)

DMS2220LFDB

Maximum Ratings – TOTAL DEVICE (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range

P

D

R

θJA

T

, T

J

STG

1.4 W 89 °C/W

-55 to +150 °C

Maximum Ratings – P-CHANNEL MOSFET – Q1 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Pulsed Drain Current (Note 6)

V

DSS

V

GSS

I

D

I

DM

-20 V

±12 V

-3.5 A

-12 A

Maximum Ratings – SBR – D1 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

V

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current Non-Repetitive Peak Forward Surge Current

8.3ms single half sine-wave superimposed on rated load

Electrical Characteristics – P-CHANNEL MOSFET – Q1 (@T

V

R(RMS

I

RRM

RWM

V

R

I

O

FSM

20 V

= +25°C, unless otherwise specified.)

A

14 V

1 A

3 A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

GSS

-20 — — V — — -1 µA

— —

±100 ±800

VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V

= ±8V, VDS = 0V

V

GS

nA

V

= ±12V, VDS = 0V

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage (Note 7)

V

GS(th

R

DS(ON)

|Y V

-0.45 — -1.3 V

60 74 86

SD

— — —

— 8 — S

|

fs

— 0.7 -1.2 V

95

120

—

VDS = VGS, ID = -250µA

= -4.5V, ID = -2.8A

V

GS

VGS = -2.5V, ID = -2.0A

mΩ

VGS = -1.8V, ID = -1.0A

VDS = -5V, ID = -2.8A VGS = 0V, IS = -1.6A

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance Reverse Transfer Capacitance

C

iss

C

oss

C

rss

— 632 — pF — 65 — pF — 54 — pF

= -10V, VGS = 0V

V

DS

f = 1.0MHz

Electrical Characteristics – SBR – D1 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 7)

Forward Voltage

Reverse Current (Note 7)

Notes: 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

V

F

I

R

20 — — V

R

— —

— — 100 µA

0.45

0.52

V

IR = 1mA

= 0.5A

I

F

= 1.0A

I

F

VR = 20V

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DMS2220LFDB

Document number: DS31546 Rev. 9 - 2

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RAIN CUR

REN

T

R

CUR

RENT

R

RAIN-SOUR

CE O

N-R

TAN

C

R

RAIN-SOUR

CE O

N-R

TAN

C

R

OUR

C

DMS2220LFDB

Q1 - P-CHANNEL MOSFET

10

8

(A)

V = -8.0V

GS

V = -4.5V

GS

V = -2.5V

GS

V = -2.0V

GS

6

V = -1.5V

GS

-I , D

4

D

2

V = -1.2V

V = -1.0V

0

01 2 3 45

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

0.14

Ω

GS

E ( )

0.12

10

V = -5V

DS

8

(A)

6

AIN

4

D

-I , D

2

0

0.5 1.0 1.5 2.0

0.14

Ω

T = 150°C

A

T = 125°C

A

-V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

T = 85°C

T = 25°C

A

T = -55°C

A

E ( )

0.12

0.1

ESIS

0.08

V = -1.8V

GS

V = -2.5V

0.06

GS

V = -4.5V

GS

0.04

, D

0.02

DS(ON)

0

012345678

-I , DRAIN CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

1.6

1.4

E

AIN-S

, D

DS(ON)

1.2

1.0

0.8

ON-RESISTANCE (NORMALIZED)

V = -2.5V

GS

I = -2A

D

V = -4.5V

GS

I = -5A

D

0.1

ESIS

T = 125°C

A

T = 150°C

A

0.08

T = 85°C

0.06

0.04

T = -55°C

A

T = 25°C

A

, D

0.02

DS(ON)

0

01234 5678

-I , DRAIN CURRENT (A)

D

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

Ω

0.11

0.09

V = -2.5V

GS

I = -2A

D

0.07

V = -4.5V

GS

I = -5A

D

0.05

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Fig. 5 On-Resistance Variation with Temperature

DS(ON)

0.03

R , DRAIN-SOURCE ON-RESISTANCE ( )

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Fig. 6 On-Resistance Variation with Temperature

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DMS2220LFDB

Document number: DS31546 Rev. 9 - 2

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C, CAPACIT

C

F

GAT

T

H

RESH

O

TAG

OUR

CE CUR

REN

T

R

T

H

R

TANC

DMS2220LFDB

10,000

f = 1MHz

)

1,000

E (p

AN

100

C

iss

C

oss

C

rss

10

048121620

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 7 Typical Capacitance

10

1

0.9

E (V)

0.8

L

0.7

LD V

0.6

0.5

E

I = -250µA

D

I = -1mA

D

0.4

0.3

GS(TH)

-V ,

0.2

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 8 Gate Thr eshold Variation vs. Ambient Temperature

8

(A)

6

T = 25°C

A

4

S

-I , S 2

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 9 Diode Forward Voltage vs. Current

1

0.1

0.01

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = 0.9

R (t) = r(t) *

θ

JA

R = 146°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

E

ESIS

MAL E

ANSIEN

r(t),

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s)

1

Fig. 10 Transient Thermal Response

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DMS2220LFDB

Document number: DS31546 Rev. 9 - 2

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P, P

OWER

PATIO

N

C, CAPACITAN

C

F

DMS2220LFDB

D1 - SBR

0.7

0.6

(W)

0.5

0.4

DISSI

0.3

0.2

D

0.1

0

0 0.5 1 1.5

I , AVERAGE FORWARD CURRENT (A)

F(AV)

Fig. 11 Forward Power Dissipation

10,000

1

T = 150°C

A

T = 125°C

0.1

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.001

F

I , INSTANTANEOUS FORWARD CURRENT (A)

0.0001

0.01

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Fig. 12 Typical Forward Characteristics

10,000

0.8

T = 150°C

1,000

100

A

T = 125°C

A

T = 85°C

A

10

1

T = 25°C

A

0.1

R

0.01

I , INSTANTANEOUS REVERSE CURRENT(uA)

0 5 10 15 20 25 30 35 40

V , INSTANTANEOUS REVERSE VOLTAGE (V)

R

Fig. 13 Typical Reverse Characteristics

1.6

1.4

1.2

Note 5

1.0

0.8

1,000

)

f = 1MHz

E (p

100

10

1

0.1 1 10 100 V , DC REVERSE VOLTAGE (V)

R

Fig. 14 Total Capacitance vs. Reverse Voltage

150

125

100

75

0.6 50

0.4

25

0.2

F(AV)

I , AVERAGE FORWARD CURRENT (A)

0

25 50 75 100 125 150 175

T , AMBIENT TEMPERATURE (°C)

A

Fig. 15 Forward Current Derating Curve

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DMS2220LFDB

Document number: DS31546 Rev. 9 - 2

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A

T , DERATED AMBIENT TEMPERATURE (°C)

0

010203040

V , DC REVERSE VOLTAGE (V)

R

Fig. 16 Operating Temperature Derating

January 2013

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Pin#1 ID

A

A1

D

D2

z

d

E

E2

f

e

b

A3

SEATING PLANE

f

L

Dim Min Max Typ

A 0.545 0.605 0.575 A1 0 0.05 0.02 A3

b 0.20 0.30 0.25

D 1.95 2.075 2.00

d D2 0.50 0.70 0.60

e

E 1.95 2.075 2.00 E2 0.90 1.10 1.00

f L 0.25 0.35 0.30 z

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y

X2

G1

C

G

X1

Y1

Z

G

Dimensions Value (in mm)

Z 1.67

G 0.20

G1 0.40

X1 1.0 X2 0.45

Y 0.37

Y1 0.70

C 0.65

U-DFN2020-6

Type B

⎯ ⎯

DMS2220LFDB

0.13

0.45

0.65

0.15

0.225

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DMS2220LFDB

Document number: DS31546 Rev. 9 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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DMS2220LFDB

SBR is a registered trademark of Diodes Incorporated.

DMS2220LFDB

Document number: DS31546 Rev. 9 - 2

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January 2013