Diodes DMP3056LSD User Manual

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DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Summary

(BR)DSS

-30V

45mΩ @ V

65mΩ @ VGS = -4.5V

DS(on) max

= -10V

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R

performance, making it ideal for high efficiency power management

applications.

Applications

NEW PRODUCT

• Power Management Functions

• Backlighting

• DC-DC Converters

TOP VIEW

) and yet maintain superior switching

DS(ON)

TOP VIEW

Internal Schematic

TA = +25°C

-6.9A

-5.1A

SO-8

DMP3056LSD

Features

• Dual P-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

• Weight: 0.072g (approximate)

P-Channel MOSFET P-Channel MOSFET

Ordering Information (Note 4)

Part Number Case Packaging

DMP3056LSD-13 SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Y WW

Chengdu A/T Site

DMP3056LSD

Document number: DS31420 Rev. 7 - 2

P3056LD

Y W

Shanghai A/T Site

1 of 5

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= Manufacturer’s Marking P3056LD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

January 2014

Page 2

)

DMP3056LSD

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Drain Current (Note 5) Steady State

Pulsed Drain Current (Note 6)

= +25°C

= +70°C

DSS

GSS

-30 V

±20

-6.9

-5.8

-24 A

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5)

NEW PRODUCT

Operating and Storage Temperature Range

J, TSTG

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate-Source Leakage

DSS

⎯ ⎯

GSS

-30

⎯ ⎯

-1 µA

±100 ±800

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance Diode Forward Voltage (Note 7)

GS(th

DS (ON)

-1 -1.7 -2.1 V

⎯

-0.5

⎯

45 65

⎯

-1.2 V

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance Reverse Transfer Capacitance

Gate Resistance

⎯

iss

⎯

oss

⎯

rss

⎯

722 114

3.3

⎯ ⎯ ⎯

⎯ Ω

SWITCHING CHARACTERISTICS

Total Gate Charge

⎯

QG ⎯ Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time

Notes: 5. Device mounted on 2 oz. 1” x 1” Copper pads on 2” x 2” FR-4 PCB.

6. Pulse width ≤10μS, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.

DMP3056LSD

Document number: DS31420 Rev. 7 - 2

⎯

d(on

⎯

d(off

www.diodes.com

⎯

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6.8

13.7

1.6

4.2

6.4

5.3

26.5

14.7

⎯

⎯ ⎯

2.5 W 50 °C/W

-55 to +150 °C

= 0V, ID = -250µA

= -30V, VGS = 0V

= ±20V, VDS = 0V

mΩ

= ±25V, VDS = 0V

= VGS, ID = -250μA

= -10V, ID = -6.0A

= -4.5V, ID = -5.0A

= -10V, ID = -5.3A

VGS = 0V, IS = -1.7A

pF pF pF

= -25V, VGS = 0V

f = 1.0MHz

= 0V, VGS = 0V

f = 1.0MHz

= -15V, VGS = -4.5V,

= -6A

= -15V, VGS = -10V,

= -6A

= -15V, VGS = -10V,

= -1A, RG = 6.0Ω

January 2014

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RAIN CUR

REN

URRENT

TATIC DR

OUR

THRESH

OLT

PAC

TANC

NEW PRODUCT

(A)

V = -10V

V = -4.5V

-I , D 3

V = -1.5V

V = -1.0V

V = -3.0V

V = -2.5V

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Out put Characteristics

0.1

V = 5V

Pulsed

(A)

AIN

-I , D 2

T = 125°C

T = 85°C

T = 150°C

1 1.5 2 2.5 3 3.5 4

-V , GATE SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characterist ics

0.05

0.04

DMP3056LSD

T = 25°C

T = -55°C

0.03

V = -4.5V

I = -5.0A

AIN-S

V = -4.5V

, S

ON-RESISTANCE ( )

DS(ON)

V = -10V

0.01

0.1 1 10

-I , DRAIN-SOURCE CURRENT (A)

Fig. 3 On-Resistance vs. Drain Current & Gate Voltage

2.8

E (V)

2.6

I = -250µA

2.4

2.2

LD V

1.8

1.6

1.4

-V ,

1.2

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Fig. 5 Gate Threshold Variation vs. Ambient Temperature

0.02

ON-RESISTANCE ( )

DS(ON)

0.01

R , STATIC DRAIN-SOURCE

10,000

)

1,000

E (p

100

V = -10V

I = -6.0A

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Fig. 4 Static Drain-Source On-Resistance

vs. Ambient Temperature

f = 1MHz

iss

oss

rss

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 6 Typical Total Capacitance

DMP3056LSD

Document number: DS31420 Rev. 7 - 2

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January 2014

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URCE CUR

REN

DMP3056LSD

(A)

0.1

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

0 0.2 0.4 0.6 0.8 1 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

NEW PRODUCT

0.01

-I , S

0.001

0.0001

Fig. 7 Reverse Drain Current vs. Source-Drain Voltage

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Dim Min Max

DETAIL A

7°~9

0.254 GAUGE PLANE

SEATING PLANE

DETAIL A

SO-8

A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10 E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

0° 8°

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DMP3056LSD

Document number: DS31420 Rev. 7 - 2

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Dimensions Value (in mm)

X 0.60

Y 1.55 C1 5.4 C2 1.27

January 2014

Page 5

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

NEW PRODUCT

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMP3056LSD

Document number: DS31420 Rev. 7 - 2

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January 2014