Diodes DMP3012LPS User Manual

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DMP3012LPS

P-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

5060-8

Product Summary

(BR)DSS

-30V

9m @ V

12m @ VGS = -4.5V

DS(ON)

= -10V

TC = +25°C

-45A

-35A

Description and Applications

This new generation 30V P-Channel Enhancement Mode MOSFET

has been designed to minimize R

switching performance. This device is ideal for use in Notebook

battery power management and loadswitch.

• Notebook Battery Power Management

• DC-DC Converters

• Loadswitch

POWERDI5060-8

and yet maintain superior

DS(ON)

Pin1

Features and Benefits

• Thermally Efficient Package-Cooler Running Applications

• High Conversion Efficiency

• Low

• Low Input Capacitance

• Fast Switching Speed

• <1.1mm Package Profile – Ideal for Thin Applications

• ESD HBM Protected up to 1kV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

– Minimizes On State Losses

RDS(ON)

Mechanical Data

• Case: POWERDI5060-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.097 grams (approximate)

Internal SchematicBottom View Top View

Top View

Pin Confi

uration

Ordering Information (Note 4)

Part Number Case Packaging

DMP3012LPS-13 POWERDI5060-8 2500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated.

DMP3012LPS

Document number: DS35247 Rev. 2 - 2

DDD

P3010LS

Y W

SDSSG

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1 of 6

= Manufacturer’s Marking P3012LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 13 = 2013) WW = Week (01 - 53)

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DMP3012LPS

Maximum Ratings (@T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -10V

Continuous Drain Current (Note 6) VGS = -4.5V

Pulsed Drain Current (Notes 6)

Avalanche Current (Notes 7) L = 1mH

Avalanche Energy (Notes 7) L = 1mH

= +25°C, unless otherwise specified.)

Characteristic Symbol

= +25°C

Steady

State

Steady

State

= +70°C

= +25°C

= +70°C

alue Unit

DSS

GSS

-30 V

±20 V

13.2

10.5

11.4

9.1

-100 A

-24 A

292 mJ

Thermal Characteristics

Characteristic Symbol

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5) R

Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 6) R

Thermal Resistance, Junction to Case @ TC = +25°C (Notes 6 ) R

Operating and Storage Temperature Range

JA

JC

, T

STG

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

DSS

GSS

DSS

-30 — — V

— — -1.0 A

— — ±100 nA

ON CHARACTERISTICS (Note 8) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

DS (ON)

GS(th)

-1.1 -1.6 -2.1 V

— 7.5 9.0

— 8.5 12.0

— 30 — S

— -0.65 -1.0 V

m

DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

iss

oss

rss

Total Gate Charge (VGS = -10V) Qg

Total Gate Charge (VGS = -4.5V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

AS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

D(on)

D(off)

— 6807 — pF

— 988 — pF

— 647 — pF

— 6.2 — 

— 139 — nC

— 66 — nC

— 19 — nC

— 21 — nC

— 8.9 — ns

— 10.5 — ns

— 254 — ns

— 95 — ns

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DMP3012LPS

Document number: DS35247 Rev. 2 - 2

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alue Unit

1.29 W

97 °C/W

2.36 W

53 °C/W

4.0 °C/W

-55 to +150 °C

VGS = 0V, ID = -250µA

VDS = -30V, VGS = 0V

VGS = ±20V, VDS = 0V

VDS = VGS, ID = -250µA

= -10V, ID = -10A

= -4.5V, ID = -10A

VDS = -15V, ID = -10A

VGS = 0V, IS = -1A

= 15V, VGS = 0V,

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

= -15V, ID = -10A

= -15V, V

= 6, ID = -1A

= -10V,

GEN

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RAIN CUR

REN

CUR

OUR

CE ON-R

TANC

OUR

CE ON-R

TANC

N-SOUR

RAIN

OUR

DMP3012LPS

V = -5V

(A)

T = 150°C

AIN

-I , D

0 0.5 1 1.5 2 2.5 3

-V , GATE-SOURCE VOLTAGE (V)

T = 125°C

T = 85°C

T = 25°C

Figure 2 Typical Transfer Characteri stics

0.02

E ( )

0.018

V = -4.5V

0.016

T = -55°C

E ( )

30.0

V = -4.0V

25.0

(A)

20.0

V = -3.5V

V = -3.0V

15.0

10.0

-I ,

5.0

0.0 0 0.5 1 1.5 2 2.5 3

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

0.012

0.01

V = -2.5V

V = -2.2V

ESIS

AIN-S

, D

V = -4.5V

0.008

V = -10V

0.006

0.004

DS(ON)

0.002 012345678910

-I , DRAIN-SOURCE CURRENT (A)

Figure 3 Typical On- Resistance

vs. Drain Current and Gate Voltage

1.5

V = -4.5V

I = -10A

1.3

1.1

0.9

DSON

0.7

ON-RESISTANCE (NORMALIZED)

V = -10V

I = -20A

0.014

ESIS

T = 125°C

T = 150°C

0.012

T = 85°C

T = -55°C

AIN-S

, D

DS(ON)

0.01

T = 25°C

0.008

0.006

0.004

0.002

0 5 10 15 20 25 30

-I , DRAIN CURRENT (A)

Figure 4 Typical On-Resistance

vs. Drain Current and Temperature

0.02

0.015

V = -4.5V

I = -10A

-S

0.01

, D

DSON

V = -10V

I = -20A

0.005

ON-RESISTANCE (NORMALIZED)

0.5

-50-25 0 255075100125150 T , AMBIENT TEMPERATURE (°C)

Figure 5 On-Resistance Variation with Temperature

-50-25 0 255075100125150 T , JUNCTION TEMPERATURE (°C)

Figure 6 On-Resistance Variation with Temperature

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DMP3012LPS

Document number: DS35247 Rev. 2 - 2

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OURCE CUR

UNCTIO

N C

DMP3012LPS

2.5

GE (V)

I = -1mA

LD V

1.5

I = -250µA

ESH

TE TH

0.5

GS(TH )

-V , G

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

100000

f = 1MHz

)

NT (

T = 150°C

-I ,

T = 125°C

T = 85°C

T = 25°C

T = -55°C

0 0.3 0.6 0.9 1.2 1.5

-V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

E (pF)

10000

ITA

APA

, J

1000

iss

oss

rss

V = -15V

I = -10A

-V , ATE-SOURCE VOLTAGE (V) 1

100

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Total Capacitance

D = 0.9

D = 0.7

D = 0.5

D = 0.3

D = 0.1

esistance

D = 0.05

0306090120150

Figure 10 Gate-Source Voltage vs. Total Gate Charge

Q , OTAL GATE CHARGE (nC)

her

D = 0.02

ransient

D = 0.01

r(t),

D = 0.005

D = Sing le Pulse

R (t) = r(t) *

R = 95°C/W

Duty Cycle, D = t /t

θθJA

0.0001 0.001 0.01 0.1 1 10 100 1000

t , PULSE DURATION TIME (s)

Figure 11 Transient Thermal Response

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DMP3012LPS

Document number: DS35247 Rev. 2 - 2

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Page 5

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Detail A

O (4X)

b (8X)

Detail A

O (4X)

e/2

b2 (4X)

b3 (4X)

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y︵4

︶

DMP3012LPS

POWERDI5060-8

Dim Min Max Typ

A 0.90 1.10 1.00

A1 0.00 0.05

b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60

c 0.230 0.330 0.277

D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10

E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19

e 1.27 BSC G 0.51 0.71 0.61 K 0.51

L 0.51 0.71 0.61

L1 0.10 0.20 0.175

M 3.235 4.035 3.635

M1 1.00 1.40 1.21

Θ 10° 12° 11°

Θ1 6° 8° 7°

All Dimensions in mm

Dimensions Value (in mm)

C 1.270 G 0.660

G1 0.820

X 0.610 X1 4.100 X2 0.755 X3 4.420 X4 5.610

Y 1.270 Y1 0.600 Y2 1.020 Y3 0.295 Y4 1.825 Y5 3.810 Y6 0.180 Y7 6.610

− −

−

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DMP3012LPS

Document number: DS35247 Rev. 2 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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DMP3012LPS

POWERDI is a registered trademark of Diodes Incorporated.

DMP3012LPS

Document number: DS35247 Rev. 2 - 2

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