Diodes DMP3010LPS User Manual

Product Summary

I

V

R

(BR)DSS

-30V

7.5m @ V 10m @ VGS = -4.5V

DS(ON)

GS

= -10V

D

TA = +25°C

-36A

-31A

Description

This new generation 30V P-Channel Enhancement Mode MOSFET

has been designed to minimize R

switching performance. This device is ideal for use in notebook

battery power management and loadswitch.

and yet maintain superior

DS(ON)

Applications

• Notebook Battery Power Management

• DC-DC Converters

• Loadswitch

Top View

POWERDI5060-8

Pin1

Bottom View

Ordering Information (Note 4 & 5)

DMP3010LPS

Green

Features

• Thermally Efficient Package-Cooler Running Applications

• High Conversion Efficiency

• Low

• Low Input Capacitance

• Fast Switching Speed

• <1.1mm Package Profile – Ideal for Thin Applications

• ESD HBM Protected up to 1kV

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

P-CHANNEL ENHANCEMENT MODE MOSFET

– Minimizes On State Losses

RDS(ON)

Mechanical Data

• Case: POWERDI5060-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.097 grams (approximate)

D

G

S

Internal Schematic

Top View

Pin Configuration

POWERDI

®

Part Number Qualification Case Packaging

DMP3010LPS-13 Commercial POWERDI5060-8 2500 / Tape & Reel

DMP3010LPSQ-13 Automotive POWERDI5060-8 2500 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/

Marking Information

POWERDI is a registered trademark of Diodes Incorporated.

DMP3010LPS

Document number: DS32239 Rev. 10 - 2

DDD

P4015SP

P3010LS

YY

WW

SDSSG

1 of 7

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Logo

Part no.

Xth week: 01 ~ 53 Year: “09” = 2009

Year: “13” = 2013

November 2013

)

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage Gate-Source Voltage

= +25°C

Continuous Drain Current (Note 7) VGS = 10V

Continuous Drain Current (Note 7) VGS = 4.5V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

Steady

State

Steady

State

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

Pulsed Drain Current (Notes 6 & 9) Avalanche Current (Notes 10 & 11) Repetitive Avalanche Energy (Notes 10 & 11) L = 1mH

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) R Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7) R Power Dissipation (Notes 7 & 8) Thermal Resistance, Junction to Case @TC = +25°C (Notes 7 & 8) R Operating and Storage Temperature Range

T

DMP3010LPS

V

DSS

V

GSS

I

D

I

D

I

D

I

DM

I

AR

E

AR

P

D

JA

P

D

JA

P

D

JC

, T

J

STG

-30 V

±20 V

-36

-29

-31

-25

-14.5

-11.5

A

-100 A

-17.5 A 153 mJ

2.18 W 55 °C/W

14.37 W

8.7 °C/W

58.7 W

2.13 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 11)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I

GSS

DSS

-30 — — V — — — —

-1.0 A

±100 nA

VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 11) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

V

GS(th

R

DS(ON)

|Y V

fs

SD

-1.1 -1.6 -2.1 V — —

|

— —

5.7 7.5

7.2 10 30 — S

-0.65 -1.0 V

VDS = VGS, ID = -250µA V

= -10V, ID = -10A

m

GS

V

= -4.5V, ID = -10A

GS

VDS = -15V, ID = -10A VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance

C

iss

C

oss

C

rss

R Total Gate Charge (VGS = -10V) Qg Total Gate Charge (VGS = -4.5V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 6. Device mounted on FR-4 PCB with 1 inch square 2 oz. Copper, single sided.

7. Device mounted on FR-4 PCB with infinite heatsink.

8. R

9. Repetitive rating, pulse width limited by junction temperature, 10μs pulse, duty cycle = 1%.

10. I

11. Short duration pulse test used to minimize self-heating effect.

is guaranteed by design while R

JC

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.

AR

12. Guaranteed by design. Not subject to production testing.

is determined by the user’s board design.

CA

Q Q

t

D(on

t

D(off

s

d

t

f

— — — — — — — — — — — —

6234 1500

774

1.28

126.2

59.2

16.1

15.7

11.4

9.4

260.7

99.3

— — — — — — — — — — — —

pF

V

= 15V, VGS = 0V,

pF pF



nC nC nC nC

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, ID = -10A

= -15V, VGS = -4.5V,

V

DS

I

= -10A

D

ns ns ns

= -15V, V

V

DS

= 6, ID = -1A

R

G

ns

GEN

= -10V,

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DMP3010LPS

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November 2013

D

RAIN CUR

REN

T

R

CUR

R

T

R

OUR

CE ON-R

TANC

R

OUR

CE ON-R

TANC

R

RAIN

OUR

C

DMP3010LPS

(A)

30

25

20

15

V = -10V

GS

V = -4.5V

GS

V = -5.0V

GS

V = -3.5V

GS

V = -3.0V

GS

V = -2.5V

GS

(A)

EN

30

25

20

15

V = -5V

DS

AIN

10

D

-I ,

5

V = -2.0V

0

0 0.5 1 1.5 2 2.5 3 3.5 4

-V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

Fig. 1 Typical Output Characteristic

0.020

Ω

E ( )

10

D

-I , D

5

T = 150°C

A

T = 125°C

A

0

0 0.5 1 1.5 2 2.5 3

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

0.016

Ω

E ( )

0.014

V = -4.5V

GS

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.016

0.012

ESIS

AIN-S

, D

DS(ON)

0.012

0.008

V = -4.5V

GS

V = -10V

0.004

0

0 5 10 15 20 25 30

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

GS

vs. Drain Current and Gate Voltage

ESIS

0.010

0.008

0.006

AIN-S

0.004

, D

0.002

DS(ON)

0

0 5 10 15 20 25 30

-I , DRAIN CURRENT (A)

D

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

1.6

1.4

0.020

0.016

E

1.2

1.0

V = -10V

GS

I = -20A

DSON

R , DRAIN-SOURCE

D

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150

V = -4.5V

GS

I = -10A

D

T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On-Resistance Variation with Temperature

-S

, D

DSON

0.012

V = -4.5V

0.008

0.004

ON-RESISTANCE (NORMALIZED)

GS

I = -10A

D

V = -10V

GS

I = -20A

D

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Fig. 6 On-Resistance Variation with Temperature

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DMP3010LPS

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OUR

CE CUR

RENT

C

UNC

TIO

N CAPACITAN

C

GE CUR

REN

T

OUR

C

OLT

G

R

C

URR

T

DMP3010LPS

2.5

2.0

30

25

(A)

20

I = -250µA

D

I = -1mA

D

15

T = 25°C

A

1.5

1.0

10

S

0.5

GS(TH)

-V , GATE THRESHOLD VOLTAGE (V) 0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperat ure

10,000

C

iss

E (pF)

-I , S 5

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

100,000

10,000

(nA)

T = 150°C

A

C

oss

1,000

C

rss

, J

T

100

f = 1MHz

04 8121620

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Total Capacitance

10

V = -15V

8

E(V)

DS

I = -10A

D

A

6

E V

4

E-S

GS

2

-V , A

0

0 20406080100120140

Q , OTAL GATE CHARGE (nC)

T

g

Fig. 11 Gate-Source Voltage vs. Total Gate Charge

1,000

DSS

-I , LEAKA

100

10

1

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

DS

T = 125°C

A

T = 85°C

A

T = 25°C

A

Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

100

R

DS(on)

Limited

10

(A)

DC

EN

P = 10s

W

1

AIN

D

T = 150°C

-I , D

0.1

T = 25°C V = -10V Single Pulse

DUT on 1 * MRP Board

0.01

0.1 1 10 100

P = 1s

W

P = 100ms

W

P = 10ms

J(max)

A

GS

-V , DRAIN-SOURCE VOLTAGE (V)

DS

W

P = 1ms

W

Fig. 12 SOA, Safe Operation Area

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R, T

R

T T

HER

R

TANC

−

1

D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

(T)

D = Single Pulse

0.001

0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s)

1

Fig. 13 Transient Thermal Response

D = 0.9

R (t) = r(t) *

θ

JA

R = 97°C/W

JA

Duty Cycle, D = t1/t2

DMP3010LPS

R

θθJA

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

D

D1

Detail A

O (4X)

E1

E

c

A1

e

1

O (4X)

POWERDI is a registered trademark of Diodes Incorporated.

A

Detail A

b (8X)

E3

E2

L

1

D3

D2

G

DMP3010LPS

Document number: DS32239 Rev. 10 - 2

e/2

b2 (4X)

K

b3 (4X)

M

M1

L1

5 of 7

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POWERDI5060-8

Dim Min Max Typ

A 0.90 1.10 1.00

A1 0.00 0.05 

b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60

c 0.230 0.330 0.277

D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10

E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19

e 1.27 BSC

G 0.51 0.71 0.61

K 0.51

L 0.51 0.71 0.61 L1 0.050 0.20 0.175

M 3.235 4.035 3.635 M1 1.00 1.40 1.21

Θ 10º 12º 11º Θ1 6º 8º 7º

All Dimensions in mm

−



November 2013

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X

Y

3

4

Y

X

3

2

Y

1

Y

5

Y

4

Y

7

X

2

1

Y

6

C

G

1

X

G

Y︵4

x

︶

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DMP3010LPS

Dimensions Value (in mm)

C 1.270 G 0.660

G1 0.820

X 0.610 X1 4.100 X2 0.755 X3 4.420 X4 5.610

Y 1.270 Y1 0.600 Y2 1.020 Y3 0.295 Y4 1.825 Y5 3.810 Y6 0.180 Y7 6.610

November 2013

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

DMP3010LPS

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DMP3010LPS

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