Diodes DMP21D0UFB User Manual
A
f
Product Summary
I
Max
D
V
(BR)DSS
-20V
R
495mΩ @ V
690mΩ @ VGS = -2.5V
960mΩ @ VGS = -1.8V
DS(on)
Max
= -4.5V
GS
@ TA = 25°C
(Note 4)
-0.77A
-0.67A
-0.57A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(on)
ideal for high efficiency power management applications.
• Portable electronics
ESD PROTECTED TO 3kV
X1-DFN1006-3
Bottom View
Product Line o
Diodes Incorporated
DMP21D0UFB
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Footprint of just 0.6mm2 – thirteen times smaller than SOT23
• Low Gate Threshold Voltage
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• ESD Protected Gate 3KV
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X1-DFN1006-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Drain
S
D
G
Top View
Internal Schematic
Gate
Gate
Protection
Diode
Equivalent Circuit
Source
Ordering Information (Note 3)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMP21D0UFB-7B NG 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. For packaging details, go to our website at http://www.diodes.com.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
DMP21D0UFB
D
atasheet Number: DS35277 Rev. 3 - 2
DMP21D0UFB-7B
NG
Top View
Bar Denotes Gate
and Source Side
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NG = Product Type Marking Code
1 of 7
February 2012
© Diodes Incorporated
A
f
T
R
T T
H
R
R
TANC
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Steady
State
T
T
T
Pulsed Drain Current (Note 6)
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Thermal Characteristics
10
9
8
7
= 25°C (Note 4)
A
= 85°C (Note 4)
A
= 25°C (Note 5)
A
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DMP21D0UFB
V
DSS
V
GSS
I
D
I
DM
P
D
P
D
R
θJA
R
θJA
T
, T
J
STG
-20 V
±8 V
-0.77
-0.55
A
-1.17
-5.0 A
0.43 W
0.99 W
293 °C/W
126 °C/W
-55 to +150 °C
Single Pulse
R = 120°C/W
θ
JA
R (t) = r(t) * R
θθ
JA JA
T - T = P * R (t)
JA JA
θ
6
5
4
3
2
P(pk), PEAK TRANSIENT POWER (W)
1
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (SEC)
1
Fig. 1 Single Pulse Maximum Power Dissipation
1
D = 0.7
E
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
E
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Single Pulse
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
DMP21D0UFB
D
atasheet Number: DS35277 Rev. 3 - 2
t , PULSE DURA TION TIME (s)
1
Fig. 2 Transient Therm al Response
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2 of 7
D = 0.9
R (t) = r(t) *
θ
JA
R = 120°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
February 2012
© Diodes Incorporated
A
f
)
g
g
g
g
g
)
r
)
R
C
U
R
R
T
RAIN
C
U
R
R
N
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
20 - - V
- - -1
- - ±10
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
SD
|
fs
- -0.7 - V
- -
50 - - mS
- - -1.2 V
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
C
C
C
R
Q
Q
Q
Q
t
D(on
t
D(off
iss
oss
rss
t
t
s
d
f
- 76.5 - pF
- 13.7 - pF
- 10.7 - pF
- 195 - Ω
1.5 - nC
- 1.0 - nC
- 0.2 - nC
- 0.3 - nC
- 7.1 - ns
- 8.0 - ns
- 31.7 - ns
- 18.5 - ns
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Diodes Incorporated
VGS = 0V, ID = -250μA
495
690
960
μA
μA
mΩ
= -20V, VGS = 0V
V
DS
= ±8V, VDS = 0V
V
GS
VDS = VGS, ID = -250μA
= -4.5V, ID = -400mA
V
GS
V
= -2.5V, ID = -300mA
GS
V
= -1.8V, ID = -100mA
GS
VDS = -3V, ID = -300mA
VGS = 0V, IS = -300mA
V
= -10V, VGS = 0V,
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -8V, VDS = -15V, ID = -1A
V
= -4.5V, VDS = -15V,
GS
= -1A
I
D
V
= -10V, -I
DS
V
= -4.5V, RG = 6Ω
GS
DMP21D0UFB
= 1A
D
Typical Characteristics
2.0
1.5
(A)
V = -4.5V
GS
V = -4.0V
GS
V = -3.0V
GS
V = -2.5V
GS
V = -2.0V
GS
EN
V = -1.8V
1.0
GS
AIN
D
-I , D
0.5
0
V = -1.5V
GS
V = -1.2V
GS
01 2 345
-V , DRAIN-SOURCE VOLTA GE (V)
DS
Fig. 3 Typical Output Char acteristic
DMP21D0UFB
D
atasheet Number: DS35277 Rev. 3 - 2
3 of 7
www.diodes.com
2.0
V = -5V
1.5
(A)
DS
E
1.0
D
-I , D
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
T = 150°C
A
T = 125°C
A
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 4 Typical Transfer Characteristic
T = 85°C
A
T = 25°C
A
T = -55°C
A
February 2012
© Diodes Incorporated
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