Diodes DMP2160UW User Manual

Features

 Low On-Resistance

 100m @ V

 120m @ V

 160m @ V

 Very Low Gate Threshold Voltage V

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

= -4.5V

GS

= -2.5V

GS

= -1.8V

GS

GS(th)

≤ 1V

NEW PRODUCT

SOT323

TOP VIEW TOP VIEW Internal Schematic

Gate

DMP2160UW

P-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

 Case: SOT323

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020D

 Terminals Connections: See Diagram Below

 Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

 Weight: 0.006 grams (approximate)

Drain

D

GS

Source

e3

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMP2160UW-7 Standard SOT323 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMF

DMP2160UW

Document number: DS31521 Rev. 5 - 2

DMF = Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)

YM

M = Month (ex: 9 = September)

1 of 5

www.diodes.com

February 2013

© Diodes Incorporated

Maximum Ratings (@T

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 5)

Pulsed Drain Current

Thermal Characteristics

NEW PRODUCT

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Characteristic Symbol Value Units

= +25°C, unless otherwise specified.)

A

T

= +25°C

A

T

= +70°C

A

V

V

I

P

R

T

J, TSTG

DSS

GSS

I

D

DM

D

θJA

DMP2160UW

-20 V

±12 V

-1.5

-1.2

A

-10 A

350 mW

360 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Source Leakage

BV

DSS

I

GSS

DSS

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage (Note 6)

V

R

DS(ON)

V

GS(th)

g

FS

SD

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Notes: 5. Device mounted on 1in2 FR-4 PCB with 2 oz. Copper. t ≤ 10 sec.

6. Short duration pulse test used to minimize self-heating effect.

C

iss

C

oss

C

rss

DMP2160UW

Document number: DS31521 Rev. 5 - 2

www.diodes.com

-20 — — V

— — -1.0 µA

—
—

—
—

±100
±800

-0.4 -0.6 -0.9 V

—

75
90

120

100
120
160

— 4 — S

— — -1.0 V

— 627 — pF

— 64 — pF

— 53 — pF

2 of 5

VGS = 0V, ID = -250µA

VDS = -20V, VGS = 0V

V

= ±8V, VDS = 0V

nA

GS

= ±12V, VDS = 0V

V

GS

VDS = VGS, ID = -250µA

V

= -4.5V, ID = -1.5A

GS

mΩ

VGS = -2.5V, ID = -1.2A

VGS = -1.8V, ID = -1A

VDS = -10V, ID = -1.5A

VGS = 0V, IS = -1.0A

= -10V, VGS = 0V

V

DS

f = 1.0MHz

February 2013

© Diodes Incorporated