Diodes DMP2160UFDB User Manual

g

Features

• Low On-Resistance

• 70mΩ @V

• 85mΩ @V

• 86mΩ (typ) @V

• Low Gate Threshold Voltage, -0.9V Max

• Fast Switching Speed

• Low Input/Output Leakage

• Low Profile, 0.5mm Max Height

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

= -4.5V

GS

= -2.5V

GS

= -1.8V

GS

U-DFN2020-6

Type B

Bottom View

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: U-DFN2020-6 Type B

• Case Material: Molded Plastic, “Green” Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu annealed over Copper leadframe.

• Weight: 0.0065 grams (approximate)

SGD

123

456

SGD

Top View

Internal Schematic

DMP2160UFDB

UL Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

SGD

DD

S

GD

Bottom View

Pin Confi

uration

e4

Ordering Information (Note 4)

Part Number Case Packaging

DMP2160UFDB-7 U-DFN2020-6 Type B 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018

Code V W X Y Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP2160UFDB

Document number: DS31643 Rev. 6 - 2

P2

YM

P2 = Marking Code
YM = Date Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Dot denotes Pin 1

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© Diodes Incorporated

θ

)

g

g

g

g

r

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 6)

Thermal Characteristics (@T

Characteristic Symbol Value Unit

Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

T

J

DMP2160UFDB

V

DSS

V

GSS

I

D

I

DM

P

D

R

JA

, T

STG

-20 V

±12 V

-3.8 A

-13 A

1.4 W
89

-55 to +150

°C/W

°C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I
I

DSS

GSS

DSS

-20

⎯ ⎯

⎯ ⎯ ⎯

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS(th

-0.45

⎯

Static Drain-Source On-Resistance

R

DS (ON)

⎯

⎯

Forward Transfer Admittance
Diode Forward Voltage (Note 7)

|Y

| ⎯

fs

V

SD

⎯

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

C

C

oss

C

rss

R

Q
Q
Q

t

D(on)

t

t

D(off)

t

⎯

iss

⎯
⎯

- 8.72 -

- 6.5 -

- 0.8 -

s

- 1.4 -

d

-

-

-

-

f

-1

70
85

⎯
⎯

V

μA
nA

mΩ

S

⎯ ⎯

±100
±800

⎯

-0.9 V

⎯
54

68
86

8

0.7 -1.2 V

536

68
59

⎯
⎯
⎯

pF
pF
pF

Ω
nC
nC
nC

11.51

12.09

55.34

27.54

- ns

- ns

- ns

- ns

VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V

= ±8V, VDS = 0V

V

GS

V

= ±12V, VDS = 0V

GS

VDS = VGS, ID = -250μA
V

= -4.5V, ID = -2.8A

GS

VGS = -2.5V, ID = -2.0A
VGS = -1.8V, ID = -1.0A
VDS = -5V, ID = -2.8A

VGS = 0V, IS = -1.6A

V

= -10V, VGS = 0V

DS

f = 1.0MHz

= 0V, VGS = 0V, f = 1MHz

V

DS

= -4.5V, VDD = -10V,

V

GS

I

= -1.5A

D

V

= -4.5V, VDD = -10V,

GEN

= 10Ω, RG = 6Ω

R

L

DMP2160UFDB

Document number: DS31643 Rev. 6 - 2

2 of 6

www.diodes.com

November 2012

© Diodes Incorporated