Diodes DMP2160U User Manual

Product Summary

max

I

D

V

R

(BR)DSS

75mΩ @ V

-20V

140mΩ @ VGS = -1.8V

DS(ON)

max

= -4.5V

GS

TA = +25°C

-3.3A

-2.4A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

 Battery Charging
 Power Management Functions
 DC-DC Converters
 Portable Power Adaptors

SOT23

Top View

Gate

Internal Schematic

DMP2160U

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance
 Very Low Gate Threshold Voltage V
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q 101 Standards for High Reliability

GS(th)

≤ 1V

Mechanical Data

 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals Connections: See Diagram Below
 Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

Drain

D

Source

G

Top View

S

Ordering Information (Note 4)

Part Number Case Packaging

DMP2160U-7 SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Chengdu A/T Site

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMF

Shanghai A/T Site

YM

DMP2160U

Document number: DS31586 Rev. 8 - 2

DMF = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 5

www.diodes.com

February 2014

© Diodes Incorporated

)

g

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Pulsed Drain Current

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range

= +25C

T

A

= +70C

T

A

V
V

I

P

R

R

T

J, TSTG

DSS

GSS

I

D

DM

D

θJA

θJC

DMP2160U

-20 V

±12 V

-3.3

-2.6

A

-13 A

1.4 W
90 °C/W
22 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25C I

Gate-Source Leakage

BV

I

DSS

DSS

GSS

-20

 

 







-1.0 μA

100
800

nA

V

VGS = 0V, ID = -250μA
VDS = -16V, VGS = 0V

= 8V, VDS = 0V

V

GS

= 12V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage (Note 5)

V

R

DS (ON)

V

GS(th

g

FS

SD

-0.4 -0.6 -0.9 V

60



73
92



 

7

75
96

140



-1.0 V

VDS = VGS, ID = -250μA

= -4.5V, ID = -1.5A

V

mΩ

GS

VGS = -2.5V, ID = -1.2A
VGS = -1.8V, ID = -1.2A

S

VDS = -10V, ID = -1.5A
VGS = 0V, IS = -1.0A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on 1in2 FR-4 PCB with 2 oz. Copper. t ≤ 10 sec.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

C



iss

C



oss

C



rss

R



G

Q



Q



s

Q



d

t



D(on

t



t



D(off

t



f

627

64
53

44.9

6.5

0.9

1.5

12.5

10.3

46.5

22.2














pF
pF
pF

Ω

nC
nC
nC
ns
ns
ns
ns

V

= -10V, VGS = 0V

DS

f = 1.0MHz

VGS = 0V, V

= -4.5V, V

V

GS

V

= -10V, V

DS

= 10Ω, RG = 1.0Ω, ID = -1A

R

L

= 0V, f = 1.0MHz

DS

= -10V, ID = -3A

DS

= -4.5V,

GS

DMP2160U

Document number: DS31586 Rev. 8 - 2

2 of 5

www.diodes.com

February 2014

© Diodes Incorporated