Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 5)
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Note 5)
Diode Forward Voltage (Note 5)
Maximum Body-Diode Continuous Current (Note 1)
DYNAMIC PARAMETERS (Note 6)
Total Gate Charge
Gate-Source Charge
NEW PRODUCT
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 5. Test pulse width t = 300μs.
6. Guaranteed by design. Not subject to production testing.
Characteristic SymbolMin Typ Max Unit Test Condition
= 25°C unless otherwise specified
A
BV
I
I
V
GS(th)
I
D (ON)
R
DS (ON)
g
V
Q
Q
t
D(on)
t
D(off)
DSS
DSS
GSS
FS
SD
I
S
Q
gd
t
gs
r
-20
⎯⎯⎯⎯
-0.6
-15
⎯
⎯
⎯
⎯⎯
⎯
g
⎯⎯
⎯
⎯
⎯
tf ⎯
C
⎯
iss
C
⎯
oss
C
⎯
rss
⎯ ⎯
±100
⎯
-1.25 V
⎯⎯
51
82
94
6.3
80
110
130
⎯
-1
V
μA
nA
A
mΩ
S
0.79 -1.26 V
1.7 A
7.3
2.0
1.9
12
20
38
41
443
125
98
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
DMP2130LDM
ID = -250μA, VGS = 0V
= -20V, VGS = 0V Zero Gate Voltage Drain Current TJ = 25°C
Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year200720082009201020112012
NEW PRODUCT
Code U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
MP1
MP1 = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year ex: U = 2007
M = Month ex: 9 = September
Package Outline Dimensions
K
J
A
SOT-26
B C
H
M
D
L
DimMin Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
⎯ ⎯
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
0° 8°
α
All Dimensions in mm
0.95
⎯
Suggested Pad Layout
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