Diodes DMP2130LDM User Manual

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Features

• Low R

• 80 mΩ @V

• 110 mΩ @V

• 130 mΩ @V

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• "Green" Device (Note 4)

DS(ON)

:

= -4.5V

GS

= -2.7V

GS

= -2.5V

GS

NEW PRODUCT

Maximum Ratings @T

= 25°C unless otherwise specified

A

DMP2130LDM

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Mechanical Data

• Case: SOT-26

• Case Material – Molded Plastic. UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish - Matte Tin Solderable per MIL-STD-202,

Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 2

• Ordering Information: See page 2

• Weight: 0.008 grams (approximate)

SOT-26

TOP VIEW

D

D

D

TOP VIEW

Internal Schematic

S

D

G

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous TA = 25°C

T
Pulsed Drain Current (Note 2)

Body-Diode Continuous Current (Note 1)

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1); Steady-State
Operating and Storage Temperature Range

Notes: 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.

2. Repetitive Rating, pulse width limited by junction temperature.

3. No purposefully added lead.

4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DMP2130LDM

Document number: DS31118 Rev. 6 - 2

= 70°C

A

www.diodes.com

1 of 4

V

DSS

V

GSS

I

D

I

DM

I

S

P

D

R

JA

θ

T

, T

J

STG

-20 V

±12

-3.4

-2.7

-12 A

2.0 A

1.25 W
100

-55 to +150

V
A

°C/W

°C

May 2008

© Diodes Incorporated

Electrical Characteristics @T

STATIC PARAMETERS

Drain-Source Breakdown Voltage

Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 5)

Static Drain-Source On-Resistance (Note 5)

Forward Transconductance (Note 5)
Diode Forward Voltage (Note 5)
Maximum Body-Diode Continuous Current (Note 1)

DYNAMIC PARAMETERS (Note 6)

Total Gate Charge
Gate-Source Charge

NEW PRODUCT

Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 5. Test pulse width t = 300μs.

6. Guaranteed by design. Not subject to production testing.

Characteristic Symbol Min Typ Max Unit Test Condition

= 25°C unless otherwise specified

A

BV

I
I

V

GS(th)

I

D (ON)

R

DS (ON)

g

V

Q
Q

t

D(on)

t

D(off)

DSS
DSS
GSS

FS
SD

I

S

Q

gd

t

gs

r

-20
⎯ ⎯
⎯ ⎯

-0.6

-15

⎯

⎯

⎯

⎯ ⎯

⎯

g

⎯
⎯

⎯

⎯

⎯

tf ⎯

C

⎯

iss

C

⎯

oss

C

⎯

rss

⎯ ⎯

±100

⎯

-1.25 V
⎯ ⎯
51

82
94

6.3

80
110
130

⎯

-1

V
μA
nA

A

mΩ

S

0.79 -1.26 V

1.7 A

7.3

2.0

1.9
12
20
38
41

443
125

98

⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯

nC
nC
nC

ns
ns
ns

ns
pF
pF
pF

DMP2130LDM

ID = -250μA, VGS = 0V

= -20V, VGS = 0V Zero Gate Voltage Drain Current TJ = 25°C

V

DS

V

= 0V, VGS = ±12V

DS

V

= VGS, ID = -250μA

DS

V

= -4.5V, VDS = -5V

GS

V

= -4.5V, ID = -4.5A

GS

V

= -2.7V, ID = -3.8A

GS

= -2.5V, ID = -3.7A

V

GS

V

= -10V, ID = -4.5A

DS

IS = -1.7A, V

VGS = -4.5V, V
VGS = -4.5V, V
VGS = -4.5V, V

V

= -10V, V

DS

= 10Ω, RG = 6Ω

R

L

= -16V, VGS = 0V

V

DS

f = 1.0MHz

= 0V

GS

⎯

= -10V, ID = 4.5A

DS

= -10V, ID = 4.5A

DS

= -10V, ID = 4.5A

DS

= -4.5V,

GS

V = -5V

DS

Pulsed

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer C haracteris ti cs

DMP2130LDM

Document number: DS31118 Rev. 6 - 2

2 of 4

www.diodes.com

May 2008

© Diodes Incorporated