Diodes DMP2123L User Manual

Features

 Low R

 72 m @V

 108 m @V

 123 m @V

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

DS(ON)

= -4.5V

GS

= -2.7V

GS

= -2.5V

GS

TOP VIEW

DMP2123L

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Mechanical Data

 Case: SOT23

 Case Material - Molded Plastic, “Green” Molding Compound.

UL Flammability Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020D

 Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram Below

 Weight: 0.008 grams (approximate)

SOT23

Drain

D

Gate

G

Internal Schematic

Source

TOP VIEW

S

e3

Ordering Information (Note 4)

Part Number Case Packaging

DMP2123L-7 SOT-23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

M1P

Chengdu A/T Site

YM

M1P

Shanghai A/T Site

YM

DMP2123L

Document number: DS31440 Rev. 2 - 2

M1P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)

YM

Y or = Year (ex: A = 2013)

Y

M = Month (ex: 9 = September)

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October 2013

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 5) Continuous TA = +25°C
T

= +70°C

A

Pulsed Drain Current (Note 6)

Body-Diode Continuous Current (Note 5)

V

DSS

V

GSS

I

D

I

DM

I

S

Thermal Characteristics

NEW PRODUCT

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5); Steady-State

Operating and Storage Temperature Range

Notes: 5. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t 10s.

6. Repetitive Rating, pulse width limited by junction temperature.

Characteristic Symbol Value Unit

P

D

R

θJA

T

, T

J

STG

DMP2123L

-20 V

12

-3.0

-2.4

-15 A

2.0 A

1.4 W

90

-55 to +150

V

A

C/W

C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

STATIC PARAMETERS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Body Leakage Current

Gate Threshold Voltage

On State Drain Current (Note 7)

Static Drain-Source On-Resistance (Note 7)

Forward Transconductance (Note 7)

Diode Forward Voltage (Note 5)

Maximum Body-Diode Continuous Current (Note 5)

DYNAMIC PARAMETERS (Note 8)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Notes: 7. Test pulse width t = 300µs.

8. Guaranteed by design. Not subject to production testing.

DMP2123L

Document number: DS31440 Rev. 2 - 2

BV

I

V

GS(th)

I

D (ON)

R

DS(ON)

g

V

Q

Q

t

D(on)

t

D(off)

C

C

C

DSS

DSS

GSS

FS

SD

I

S

Q

gd

t

t

iss

oss

rss

gs

r

f

-20

 

 

-0.6

-15







 



g



















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 

V

-1 µA

100



-1.25 V

 

51
87
99

7.3

72
108
123



nA

A

m

S

0.79 -1.26 V

1.7 A

7.3

2.0

1.9

12

20

38

41

443

128

101





















nC

nC

nC

ns

ns

ns

ns

pF

pF

pF

ID = -250µA, VGS = 0V

V

= -20V, VGS = 0V

DS

V

= 0V, VGS = 12V

DS

V

= VGS, ID = -250µA

DS

V

= -4.5V, VDS = -5V

GS

= -4.5V, ID = -3.5A

V

GS

= -2.7V, ID = -3.0A

V

GS

V

= -2.5V, ID = -2.6A

GS

V

= -10V, ID = -3.0A

DS

IS = -1.7A, V

GS

= 0V



VGS = -4.5V, V

VGS = -4.5V, V

VGS = -4.5V, V

V

= -10V, V

DS

R

= 10, RG = 6

L

= -16V, VGS = 0V

V

DS

= -10V, ID = -3.0A

DS

= -10V, ID = -3.0A

DS

= -10V, ID = -3.0A

DS

= -4.5V,

GS

f = 1.0MHz

© Diodes Incorporated

October 2013