Diodes DMP210DUDJ User Manual

Product Summary

I

V

(BR)DSS

-20V

R

5.5Ω @ V

DS(ON)

= -4.5V -200mA

GS

7.5Ω @ VGS = -2.5V -170mA

D

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

) and yet maintain superior switching

DS(on)

performance, making it ideal for high efficiency power management

applications.

Applications

 DC-DC Converters

 Power Management Functions

ESD protected

Top View

DMP210DUDJ

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Dual P-Channel MOSFET

 Low On-Resistance

 5.5Ω @ -4.5V

 7.5Ω @ -2.5V

 11.5Ω @ -1.8V

 17.5Ω @ -1.5V

 Very Low Gate Threshold Voltage V

GS(TH)

<1.15V

 Low Input Capacitance

 Fast Switching Speed

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT963

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

 Weight: 0.0027 grams (approximate)

SOT963

D

2

S

2

Internal Schematic

S

G

1

1

G

D

1

2

Ordering Information (Note 4)

Part Number Case Packaging

DMP210DUDJ-7 SOT963 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information (Note 5)

P1

P1 = Product Type Marking Code

Note: 5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).

DMP210DUDJ

Document number: DS31494 Rev. 9 - 2

1 of 6

www.diodes.com

November 2013

© Diodes Incorporated

)

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -4.5V

Continuous Drain Current (Note 6) VGS = -2.5V

Pulsed Drain Current

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

T

= 10μs IDM

P

V
V

P

R

T

J, TSTG

DSS

GSS

I

D

I

D

D

θJA

DMP210DUDJ

-20 V
±8 V

-200

-150

-170

-130

mA

mA

-600 mA

330 mW

377.16 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-20




 




 

-100

-50

100

1

V

VGS = 0V, ID = -250µA

= -16V, VGS = 0V

V

nA
nA

nA
µA

DS

= -5.0V, VGS = 0V

V

DS

= 5.0V, VDS = 0V

V

GS

V

= 8.0V, VDS = 0V

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 7)

V

R

DS(ON)

|Y
V

GS(th

fs

SD

-0.45

 
 
 
 


150 200

|

-0.5



20



-1.15 V

5.5

7.5

11.5

17.5

 V


-1.2 V

VDS = VGS, ID = -250µA

= -4.5V, ID = -100mA

V

GS

VGS = -2.5V, ID = -50mA

Ω

VGS = -1.8V, ID = -20mA
VGS = -1.5V, ID = -10mA

= -1.2V, ID = -1mA

mS

GS

V

= -10V, ID = -0.2A

DS

VGS = 0V, IS = -115mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

iss

C

oss

C

rss





13.72 27.44 pF

4.01 8.02 pF

2.34 4.68 pF

= -15V, VGS = 0V

V

DS

f = 1.0MHz

SWITCHING CHARACTERISTICS (Note 8)

Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 6. Device mounted on 1”x1” FR-4 substrate PC board, with minimum recommended pad layout, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

t

d(on

t

d(off

t

t

f

DMP210DUDJ

Document number: DS31494 Rev. 9 - 2







www.diodes.com

2 of 6

7.7

19.3

25.9

31.5







ns

= -4.5V, VDD = -15V

V

GS

I

= -180mA, RG = 2.0Ω

D

November 2013

© Diodes Incorporated