Diodes DMP210DUDJ User Manual

Product Summary

I

V

(BR)DSS

-20V

R

5.5Ω @ V

DS(ON)

= -4.5V -200mA

GS

7.5Ω @ VGS = -2.5V -170mA

D

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

) and yet maintain superior switching

DS(on)

performance, making it ideal for high efficiency power management

applications.

Applications

 DC-DC Converters

 Power Management Functions

ESD protected

Top View

DMP210DUDJ

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Dual P-Channel MOSFET

 Low On-Resistance

 5.5Ω @ -4.5V

 7.5Ω @ -2.5V

 11.5Ω @ -1.8V

 17.5Ω @ -1.5V

 Very Low Gate Threshold Voltage V

GS(TH)

<1.15V

 Low Input Capacitance

 Fast Switching Speed

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT963

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

 Weight: 0.0027 grams (approximate)

SOT963

D

2

S

2

Internal Schematic

S

G

1

1

G

D

1

2

Ordering Information (Note 4)

Part Number Case Packaging

DMP210DUDJ-7 SOT963 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information (Note 5)

P1

P1 = Product Type Marking Code

Note: 5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).

DMP210DUDJ

Document number: DS31494 Rev. 9 - 2

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)

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -4.5V

Continuous Drain Current (Note 6) VGS = -2.5V

Pulsed Drain Current

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

T

= 10μs IDM

P

V
V

P

R

T

J, TSTG

DSS

GSS

I

D

I

D

D

θJA

DMP210DUDJ

-20 V
±8 V

-200

-150

-170

-130

mA

mA

-600 mA

330 mW

377.16 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-20




 




 

-100

-50

100

1

V

VGS = 0V, ID = -250µA

= -16V, VGS = 0V

V

nA
nA

nA
µA

DS

= -5.0V, VGS = 0V

V

DS

= 5.0V, VDS = 0V

V

GS

V

= 8.0V, VDS = 0V

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 7)

V

R

DS(ON)

|Y
V

GS(th

fs

SD

-0.45

 
 
 
 


150 200

|

-0.5



20



-1.15 V

5.5

7.5

11.5

17.5

 V


-1.2 V

VDS = VGS, ID = -250µA

= -4.5V, ID = -100mA

V

GS

VGS = -2.5V, ID = -50mA

Ω

VGS = -1.8V, ID = -20mA
VGS = -1.5V, ID = -10mA

= -1.2V, ID = -1mA

mS

GS

V

= -10V, ID = -0.2A

DS

VGS = 0V, IS = -115mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

iss

C

oss

C

rss





13.72 27.44 pF

4.01 8.02 pF

2.34 4.68 pF

= -15V, VGS = 0V

V

DS

f = 1.0MHz

SWITCHING CHARACTERISTICS (Note 8)

Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 6. Device mounted on 1”x1” FR-4 substrate PC board, with minimum recommended pad layout, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

t

d(on

t

d(off

t

t

f

DMP210DUDJ

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


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7.7

19.3

25.9

31.5







ns

= -4.5V, VDD = -15V

V

GS

I

= -180mA, RG = 2.0Ω

D

November 2013

© Diodes Incorporated

D

RAIN CUR

REN

T

R

R

OUR

ON-R

R

R

OUR

CE ON-R

TANC

0.6

0.5

(A)

0.4

0.3

0.2

D

I,

0.1

0

0 0.5 1 1.5 2 2.5 3 3.5 4

V , DRAIN-SOURCE VOLTAGE(V)

DS

Fig. 1 Typical Output Characteristics

100



0.6

0.5

0.4

0.3

0.2

D

I , DRAIN CURRENT (A)

0.1

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

10



V =4.5V

GS

9

Ave R (R) @ 150 C

8

DS(ON)

DMP210DUDJ

V =5.0V

DS



R ( ) Ave @ V =1.5V



ESISTANCE ( )

CE

AIN-S

, D

DS(ON)

DS(ON) GS

10

1

R ( ) Ave @ V =1.8V



DS(ON) GS

R ( ) Ave @ V =2.5V



DS(ON) GS

R ( ) Ave @ V =4.5V



DS(ON) GS

0.001 0.01 0.1 1
I , DRAIN-SOURCE CURRENT

D

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.6

E

R()



DS(ON)

@V =4.5V, I =200mA

GS D

1.4

7

Ave R (R) @ 125 C

DS(ON)

6



5

4

Ave R (R) @ 85 C

DS(ON)

3

Ave R (R) @ 25 C

DS(ON)

2

Ave R (R) @ -55 C

DS(ON)

1

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

0 0.1 0.2 0.3 0.4 0.5







I , DRAIN CURRENT (A)

D

Fig. 4 Typical On- Resistance vs.

Drain Current and Temperature

12

10

ESIS

AIN-S

, D

8

1.2

R()



DS(ON)

@V =2.5V, I =50mA

GS D

1.0

(Normalized)

6

(Normalized)

4

0.8

DS(ON)

0.6

-50

-25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J



Fig. 5 On-Resisitance Variation with Temperature

2

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE

0

-50 -25 0 25 50
T , JUNCTION TEMPERATURE ( C)

J

Fig. 6 On-Resisitance vs.Temperature

R()



DS(ON)

@V =2.5V, I =50mA

GS D

R()
@V =4.5V, I =200mA

75 100 125 150

DS(ON)

GS D





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GATE THRESH

O

OLTAG

OUR

CE CUR

R

N

T

C

UNC

TION CAPACITANC

F

GE CUR

RENT

DMP210DUDJ

1.4

1.2

E (V)

1

V (V) @ I = 1mA

LD V

0.8

(th) D

0.6

V (V) @ V =0V

SD GS



T=25C

0.5

A

(A)

0.4

E

0.3

0.6

V (V) @ I = 250 A

(th) D

0.4

0.2

GS(th)

V,

0

-50

-25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

100

)

E (p





f=1MHz

0.2

S

I, S

0.1

0

0 0.2 0.4 0.6 0.8 1 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

10000

I (nA) Ave @ 150 C

DSS

1000

(nA)



C Ave(pF)

ISS

10

C Ave(pF)

OSS

C Ave(pF)

, J

T

RSS

1

048121620

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Junction Capacitance

100

I (nA) Ave @ 85 C

DSS



10

DSS

I , LEAKA

I (nA) Ave @ 25 C

1

DSS

I (nA) Ave @ -55C

DSS





0.1
02468101214161820

V , DRAIN-SOURCE VOLTAGE(V)

Fig. 10 Typical Drain-Source Leakage Current vs. Voltage

DS

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

E1

A1

D

e1

L

E

e

b (6 places)

A

c

Dim Min Max Typ

A1 0 0.05 -

E1 0.75 0.85 0.80

e1 0.70 Typ

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y1

Y (6X)

X (6X)

CC

Dimensions Value (in mm)

C 0.350
X 0.200
Y 0.200

Y1 1.100

DMP210DUDJ

SOT963

A 0.40 0.50 0.45

c 0.120 0.180 0.150
D 0.95 1.05 1.00
E 0.95 1.05 1.00

L 0.05 0.15 0.10
b 0.10 0.20 0.15
e 0.35 Typ

All Dimensions in mm

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

DMP210DUDJ

DMP210DUDJ

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