Diodes DMP2104V User Manual
Features
• P-Channel MOSFET
• Very Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
SOT-563
Top View
DMP2104V
P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
D
D
Top View
Internal Schematic
S
D
G
D
Ordering Information (Note 3)
Part Number Case Packaging
DMP2104V-7 SOT-563 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012
Code T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMP2104V
Document number: DS30942 Rev. 7 - 2
DMV
YM
DMV = Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
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p
)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
T
Continuous Drain Current (Note 4) VGS = -4.5V
Continuous Drain Current (Note 4) VGS = -4.5V
Continuous Drain Current (Note 4) VGS = -2.5V
Pulsed Drain Current
Steady
State
t ≤ 5s
Steady
State
= 25°C
A
= 70°C
T
A
T
= 25°C
A
T
= 70°C
A
T
= 25°C
A
= 70°C
T
A
= 10μs IDM
t
Thermal Characteristics
Characteristic Symbol Value Units
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) R
Operating and Storage Temperature Range
V
V
P
T
J, TSTG
DSS
GSS
I
D
I
D
I
D
D
θJA
DMP2104V
-20 V
±12 V
-1.9
-1.5
-2.1
-1.65
-1.7
-1.3
A
A
A
-4.0 A
0.85 W
146 °C/W
-55 to +150 °C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
T
= 125°C
J
Gate-Source Leakage
-20
BV
DSS
I
DSS
I
⎯ ⎯
GSS
⎯ ⎯
⎯ ⎯
-1.0
-5.0
±100
V
VGS = 0V, ID = -250μA
μA
VDS = -20V, VGS = 0V
nA
V
= ±12V, VDS = 0V
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 5)
V
GS(th
R
DS (ON)
g
V
FS
SD
-0.45
⎯
⎯
⎯ ⎯
⎯
92
134
180
3.1
-1.0 V
150
200
240
⎯
-0.9 V
VDS = VGS, ID = -250μA
V
mΩ
VGS = -2.5V, ID = -670mA
VGS = -1.8V, ID = -200mA
S
VDS = -10V, ID = -810mA
VGS = 0V, IS = -360mA
= -4.5V, ID = -950mA
GS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 4. Device mounted on FR-4 PCB with 1 inch square pads.
5. Short duration pulse test used to minimize self-heating effect.
C
iss
C
oss
C
rss
DMP2104V
Document number: DS30942 Rev. 7 - 2
⎯
⎯
⎯
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320
80
60
⎯
⎯
⎯
pF
pF
pF
V
= -16V, VGS = 0V
DS
f = 1.0MHz
March 2011
© Diodes Incorporated
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