Features
• P-Channel MOSFET
• Very Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Maximum Ratings @T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
TOP VIEW
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
DMP2104LP
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Mechanical Data
• Case: DFN1411-3
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish - NiPdAu over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.003 grams (approximate)
DFN1411-3
S
D
G
BOTTOM VIEW
TA = 25°C
T
= 70°C
A
V
DSS
V
GSS
I
D
TOP VIEW
Internal Schematic
-20 V
±12 V
-1.5
-1.2
A
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
T
= 125°C
J
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
R
Forward Transconductance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 1. Device mounted on FR-4 PCB with 1 inch square pads.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMP2104LP
Document number: DS31091 Rev. 6 - 2
BV
DSS
I
DSS
I
GSS
V
GS(th)
DS (ON)
g
V
C
C
C
-0.45
FS
SD
iss
oss
rss
www.diodes.com
T
-20
⎯ ⎯
⎯ ⎯
⎯
134
180
⎯
⎯ ⎯
⎯
320
⎯
⎯
1 of 4
P
D
R
JA
θ
j, TSTG
⎯ ⎯
-1.0
-5.0
±100
⎯
92
-1.0 V
150
200
240
3.1
-0.9 V
80
60
⎯
⎯
⎯
⎯
500 mW
250 °C/W
-55 to +150 °C
V
V
= 0V, ID = -250μA
GS
μA
V
= -20V, VGS = 0V
DS
nA
V
= ±12V, VDS = 0V
GS
V
= VGS, ID = -250μA
DS
VGS = -4.5V, ID = -950mA
mΩ
VGS = -2.5V, ID = -670mA
V
= -1.8V, ID = -200mA
GS
S
V
= -10V, ID = -810mA
DS
V
= 0V, IS = -360mA
GS
pF
pF
pF
= -16V, VGS = 0V
V
DS
f = 1.0MHz
November 2007
© Diodes Incorporated
NEW PRODUCT
DMP2104LP
V = -10V
DS
T = 125°C
A
T = 25°C
-V , DRAIN-SOURCE VOLTAGE(V)
DS
Fig.1 Typical Out put Characteristics
I = 1.0A
D
V = -2.5V
GS
V = -4.5V
GS
A
T = -55°C
A
0.30
0.20
0.10
V = -4.5V
GS
T = 150°C
A
T = 125°C
A
T = 25°C
A
T = -55°C
A
V = -1.8V
GS
600
500
400
300
200
100
0.00
012 34
DMP2104LP
Document number: DS31091 Rev. 6 - 2
5
2 of 4
www.diodes.com
0
024 6810121416182
November 2007
© Diodes Incorporated
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