Diodes DMP2100UCB9 User Manual
NEW PRODUCT
Product Summary
I
BV
R
D1D2
-20V
100m @ V
D1D2(ON)
GS
= -4.5V
D1D2
TC = +25°C
-4.0 A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
D1D2(ON)
Applications
Battery Management
Load Switch
Battery Protection
ESD PROTECTED TO 3kV
DMP2100UCB9
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low Qg & Qgd
Dual PMOS in Common-Source Configuration
Small Footprint 1.5-mm × 1.5-mm
Gate ESD Protection to 3kV
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-WLB1515-9
Terminal Connections: See Diagram Below
Weight: 0.0018 grams (approximate)
G1 D1 D1
SS D2 D1
G2 D2 D2
Top View
Ordering Information (Note 4)
Part Number Case Packaging
DMP2100UCB9-7 U-WLB1515-9 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMP2100UCB9
Document number: DS35725 Rev. 3 - 2
6W
YM
6W = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
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July 2013
© Diodes Incorporated
V
DMP2100UCB9
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
Steady
State
T
C
T
C
T
C
T
C
Continuous Source Pin Current (Note 6)
Continuous Gate Clamp Current (Note 6)
Pulsed Source Pin Current (Pulse duration 10s, duty cycle 1%)
Pulsed Drain Current (Pulse duration 10s, duty cycle 1%)
Pulsed Gate Clamp Current (Pulse duration 10s, duty cycle 1%)
= +25°C
= +70°C
= +25°C
= +70°C
V
V
I
D1D2
I
D1D2
D1D2
GS
I
S
I
G
I
SM
I
DM
I
GM
-20 V
-6 V
-3.0
-2.1
-4.0
-3.0
A
A
-2.0 A
-0.4 A
-15 A
-28 A
-6 A
NEW PRODUCT
Thermal Characteristics (@T
Characteristic Symbol
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
= +25°C, unless otherwise specified.)
A
T
J, TSTG
alue Units
P
D
P
D
R
JA
R
JA
0.8 W
1.6 W
152 °C/W
65 °C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Source Leakage
BV
BV
I
D1D2
GSS
DDS
GSS
-20 — — V
-6.1
— —
— —
— —
-1 A
-100 nA
VGS = 0V, I
V
IGS = -250A, V
V
D1D2
VGS = -6V, VDS = 0V
= -250A
D1D2
= 0V
D1D2
= -16V, VGS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
V
GS(th)
R
D1D2(ON)
|Y
fs
-0.4 -0.7 -0.9 V
—
—
—
|
— 5.3 — S
80 100
105 130
140 175
m
V
= VGS, IDS = -250A
D1D2
V
= -4.5V, I
V
V
V
GS
GS
GS
D1D2
= -2.5V, I
= -1.8V, I
D1D2
D1D2
D1D2
= -10V, I
D1D2
=- 1A
= -1A
= -1A
= -1A
DIODE CHARACTERISTICS
Diode Forward Voltage (Note 6)
Reverse Recovery Charge
Reverse Recovery Time
—
V
SD
Q
rr
t
rr
—
—
-0.7 -1 V
18
34
—
—
nC
ns
VGS = 0V, I
V
di/dt = 200A/s
= -1A
D1D2
= -9.5V, IF = -1A,
dd
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Gate Charge at Vth Q
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2
(6.45-cm2), 2-oz. (0.071-mm thick) Cu
DMP2100UCB9
Document number: DS35725 Rev. 3 - 2
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
g(th)
t
D(on)
t
r
t
D(off)
t
f
www.diodes.com
—
— 107
— 43.5
— 3.3
— 0.3 —
— 0.6 —
— 0.2 —
— 8.5 —
— 7.0 —
— 47 —
— 28 —
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232 310 pF
150 pF
55 pF
V
f = 1.0MHz
4.2 nC
nC
V
nC
I
nC
ns
ns
V
ns
I
ns
= -10V, VGS = 0V,
D1D2
= -4.5V, V
GS
= -1A
D1D2
= -10V, VGS = -4.5V,
D1D2
= -1A, RG = 30,
D1D2
D1D2
© Diodes Incorporated
= -10V,
July 2013
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