Diodes DMP2100UCB9 User Manual

NEW PRODUCT

Product Summary

I

BV

R

D1D2

-20V

100m @ V

D1D2(ON)

GS

= -4.5V

D1D2

TC = +25°C

-4.0 A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

D1D2(ON)

Applications

 Battery Management
 Load Switch
 Battery Protection

ESD PROTECTED TO 3kV

DMP2100UCB9

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low Qg & Qgd
 Dual PMOS in Common-Source Configuration
 Small Footprint 1.5-mm × 1.5-mm
 Gate ESD Protection to 3kV
 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: U-WLB1515-9
 Terminal Connections: See Diagram Below
 Weight: 0.0018 grams (approximate)

G1 D1 D1

SS D2 D1

G2 D2 D2

Top View

Ordering Information (Note 4)

Part Number Case Packaging

DMP2100UCB9-7 U-WLB1515-9 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMP2100UCB9

Document number: DS35725 Rev. 3 - 2

6W
YM

6W = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

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V

DMP2100UCB9

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 6) VGS = -4.5V

Steady

State

Steady

State

T

C

T

C

T

C

T

C

Continuous Source Pin Current (Note 6)
Continuous Gate Clamp Current (Note 6)
Pulsed Source Pin Current (Pulse duration 10s, duty cycle  1%)
Pulsed Drain Current (Pulse duration 10s, duty cycle  1%)
Pulsed Gate Clamp Current (Pulse duration 10s, duty cycle  1%)

= +25°C
= +70°C
= +25°C
= +70°C

V

V

I

D1D2

I

D1D2

D1D2

GS

I

S

I

G

I

SM

I

DM

I

GM

-20 V

-6 V

-3.0

-2.1

-4.0

-3.0

A

A

-2.0 A

-0.4 A

-15 A

-28 A

-6 A

NEW PRODUCT

Thermal Characteristics (@T

Characteristic Symbol

Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

T

J, TSTG

alue Units

P

D

P

D

R

JA

R

JA

0.8 W

1.6 W

152 °C/W

65 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Source Leakage

BV

BV

I

D1D2

GSS
DDS
GSS

-20 — — V

-6.1
— —
— —

— —

-1 A

-100 nA

VGS = 0V, I

V

IGS = -250A, V
V

D1D2

VGS = -6V, VDS = 0V

= -250A

D1D2

= 0V

D1D2

= -16V, VGS = 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

V

GS(th)

R

D1D2(ON)

|Y

fs

-0.4 -0.7 -0.9 V
—

—
—

|

— 5.3 — S

80 100
105 130
140 175

m

V

= VGS, IDS = -250A

D1D2

V

= -4.5V, I
V
V
V

GS
GS
GS
D1D2

= -2.5V, I

= -1.8V, I

D1D2
D1D2
D1D2

= -10V, I

D1D2

=- 1A
= -1A
= -1A

= -1A
DIODE CHARACTERISTICS
Diode Forward Voltage (Note 6)

Reverse Recovery Charge
Reverse Recovery Time

—

V

SD

Q

rr

t

rr

—
—

-0.7 -1 V
18
34

—
—

nC

ns

VGS = 0V, I
V

di/dt = 200A/s

= -1A

D1D2

= -9.5V, IF = -1A,

dd

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge

Gate Charge at Vth Q
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Device mounted on FR4 material with 1-inch

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

2

(6.45-cm2), 2-oz. (0.071-mm thick) Cu

DMP2100UCB9

Document number: DS35725 Rev. 3 - 2

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

g(th)

t

D(on)

t

r

t

D(off)

t

f

www.diodes.com

—
— 107
— 43.5
— 3.3
— 0.3 —
— 0.6 —
— 0.2 —
— 8.5 —
— 7.0 —
— 47 —
— 28 —

2 of 6

232 310 pF

150 pF

55 pF

V
f = 1.0MHz

4.2 nC
nC

V

nC

I

nC

ns
ns

V

ns

I

ns

= -10V, VGS = 0V,

D1D2

= -4.5V, V

GS

= -1A

D1D2

= -10V, VGS = -4.5V,

D1D2

= -1A, RG = 30,

D1D2

D1D2

© Diodes Incorporated

= -10V,

July 2013

R

CUR

R

T

R

CUR

RENT

R

RAIN-SOUR

C

R

R

OUR

CE ON-R

TANC

G

TE THR

H

O

OLT

G

O

URCE C

URR

N

T

NEW PRODUCT

5

4

V = -4.5V

GS

V = -2.5V

GS

V = -1.8V

GS

(A)
EN

3

2

AIN

D

-I , D
1

0

0 0.5 1.0 1.5 2.0 2.5 3.0

-V , DRAIN -SOURCE VOLTAGE(V)

DS

Fig. 1 Typical Output Characteristics

1.7

1.5

E

1.3

V= -1.5V

GS

V = -1.2V

GS

V= -5.0V

DS

(A)

AIN

D

-I , D

T = 150 C

A

T = 125 C

A





0 0.5 1.0 1.5 2.0

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

0.20



0.18

E ( )

0.16

0.14

ESIS

DMP2100UCB9

T = 85C



A

T = 25C



A

T = -55C



A

0.12

1.1

, D

0.9

DS(ON)

0.7

ON-RESISTANCE (NORMALIZED)

0.5

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 3 On-Resistance Variation with Temperature

1.2



0.10

0.08

0.06

AIN-S

0.04

, D

0.02

DS(ON)

0

0123456

-V , GATE SOURCE VOLTAGE (V)

GS

Fig. 4 Typical On-Resistance vs.
Drain Curr ent and

Gate Voltag e

10

9

1.0

E(V)
A

0.8

LD V

0.6

8

(A)

7

E

6
5

ES

4

0.4

A

0.2

GS(TH)

-V ,
0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 Gate Threshold Variation vs. Ambient Temperature

3

S

-I , S
2

1
0

0.4 0.6 0.8 1.0 1.2 1.4

-V , SOURCE-DRAIN VOLT AGE (V)

SD

Fig. 6 Diode Forward Voltage vs. Current

DMP2100UCB9

Document number: DS35725 Rev. 3 - 2

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C

UNC

TIO

N CAPACITAN

C

F

GAT

OUR

C

O

TAG

R

CUR

RENT

T

R

T T

H

R

R

TANC

NEW PRODUCT

DMP2100UCB9

6

)

E (p

C

iss

C

, J

T

oss

C

rss

0 5 10 15 20

-V , DRAIN-SOURCE VOL TAGE (V)

DS

Fig. 7 Typical Junction Capacitance

100

f = 1MHz

5

E (V)

4

L
E V

3

E-S

2

GS

1

-V ,

0

01234

Q , TOTAL GATE CHARGE (nC)

g

Fig. 8 Gate-Charg e C haracter i s t ics

P = 10sWµ

10

R

DS(on)

Limited

(A)

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

T = 150°C

J(max)

T = 25°C

A

Single Pulse DUT
on 1 * MRP Board
V = -6V

GS

W

P = 1ms

W

P = 100µs

W

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DS

AIN

D

-I , D

0.01

1

0.1

Fig. 9 SOA, Safe Operat ion Area

1

D = 0.7

E

D = 0.5
D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

E

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.0001 0.001 0.01 0.1 1 10 100 1,000

D = 0.9

R (t) = r(t) * R



JA JA

R = 70°C/W



JA

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIMES (sec)

Fig. 10 Transient Thermal Resistance

DMP2100UCB9

Document number: DS35725 Rev. 3 - 2

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NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

D

6X-Ø b

PIN ID

E

e

e

e

e

A3

A2

A

SEATING PLANE

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DMP2100UCB9

U-WLB1515-9

Dim Min Max Typ

A - 0.62 ­A2 - 0.36 0.36
A3 0.020 0.030 0.025

b 0.27 0.37 0.32

D 1.47 1.51 1.49

E 1.47 1.51 1.49

e - - 0.50

All Dimensions in mm

C1

C

DMP2100UCB9

Document number: DS35725 Rev. 3 - 2

D

Dimensions

C 0.50

C

C1 1.00
C2 1.00

D 0.25

Value

(in mm)

C2

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NEW PRODUCT

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

DMP2100UCB9

DMP2100UCB9

Document number: DS35725 Rev. 3 - 2

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