Diodes DMP2100U User Manual

Product Summary
I
D
TA = +25°C
-4.3A
-4.0A
-2.8A
V
(BR)DSS
-20V
R
DS(ON) MAX
38m @ V 43m @ VGS = -4.5V 75m @ VGS = -2.5V
GS
= -10V
Package
SOT23
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(on)
Applications
Load Switch
Power Management Functions
ESD PROTECTED TO 3kV
SOT23
Top View
DMP2100U
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
D
Gate
G
Top View
Internal Schematic
S
Equivalent Circuit
Gate Protection Diode
Drain
Source
Ordering Information (Note 4 & 5)
Part Number Compliance Case Packaging
DMP2100U-7 Standard SOT23 3,000/Tape & Reel
DMP2100UQ-7 Automotive SOT23 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/
.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018
Code V W X Y Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMP2100U
Document number: DS35718 Rev. 6 - 2
35P
www.diodes.com
35P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008)
YM
M = Month (ex: 9 = September)
1 of 6
April 2013
© Diodes Incorporated
)
g
g
g
g
)
r
)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage Gate-Source Voltage (Note 6)
Steady
Continuous Drain Current (Note 8) VGS = -10V
State
t<5s
Maximum Continuous Body Diodes Forward Current (Note 8) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Total Power Dissipation (Note 8)
Thermal Resistance, Junction to Ambient (Note 8)
Thermal Resistance, Junction to Case (Note 8) Operating and Storage Temperature Range
T
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
DMP2100U
JA
JA
JC
D
D
STG
-20
±10
-4.3
-3.4
-5.5
-4.3
-2
-30
0.8
0.5
161
1.3
0.8 99
15
-55 to +150 °C
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
= +25°C
T
A
TA = +70°C
Steady State
t<5s 96
= +25°C
T
A
TA = +70°C
Steady State
t<5s 60
P
R
P
R
R
T
, T
J
V V
A
A
A A
W
°C/W
W
°C/W
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
-20 — — V — — — —
-1 µA
±10 µA
VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
V
GS(th
R
DS (ON)
|Y
fs
-0.3 — -1.4 V — — — —
|
25 38 29 43 37 75 47
3
— —
VDS = VGS, ID = -250µA
= -10V, ID = -3.5A
V
GS
V
= -4.5V, ID = -3A
m
GS
V
GS
V
GS
S
VDS = -5V, ID = -4A
= -2.5V, ID = -1A = -1.8V, ID = -0.5A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistnace
C
iss
C
oss
C
rss
R
— — — —
216
90 24
250
— — — —
pF pF pF
= -15V, VGS = 0V
V
DS
f = 1.0MHz
V
= 0V, VGS = 0V, f = 1.0MHz
DS
SWITCHING CHARACTERISTICS (Note 10)
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes: 6. AEC-Q101 VGS maximum is ±9.6V
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
Q Q Q
t
D(on
t
D(off
s
d
t
t
f
DMP2100U
Document number: DS35718 Rev. 6 - 2
— — — — — — —
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www.diodes.com
9.1
1.6
2.0 80
155 688 423
— — — — — — —
nC nC nC ns ns ns ns
= -4.5V, VDS = -10V
V
GS
= -4A
I
D
= -10V, VGS = -4.5V,
V
DS
R
= 2.5, RG = 3.0
D
April 2013
© Diodes Incorporated
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