Diodes DMP2070UCB6 User Manual

NEW PRODUCT

Product Summary

I

V

R

(BR)DSS

-20V

70m @ V
90m @ VGS = -2.5V

DS(ON)

GS

= -4.5V

D

TA = 25°C

3.5 A

3.0 A

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management

applications.

• Battery Management

• Load Switch

• Battery Protection

) and yet maintain superior switching

DS(on)

U-WLB1510-6

DD

SS

SG

Top View

DMP2070UCB6

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low Qg & Qgd

• Small Footprint

• Low Profile 0.62mm height

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device Halogen and Antimony Free (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-WLB1510-6

• Terminal Connections: See Diagram Below

• Weight: 0.0018 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMP2070UCB6-7 U-WLB1510-6 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

2W

2W = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)

YM

M = Month (ex: 9 = September)

DMP2070UCB6

Document number: DS35553 Rev. 2 - 2

1 of 6

www.diodes.com

October 2011

© Diodes Incorporated

θ

θ

)

g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings @T

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -4.5V
Pulsed Drain Current (Note 6)

Maximum Continuous Body Diode Forward Current (Note 5)

Thermal Characteristics @T

Total Power Dissipation (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Steady

State

Steady

State

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

P

P
R
R

T

J, TSTG

DMP2070UCB6

V

DSS

V

GSS

I

D

I

D

I

DM

I

S

D
D
JA
JA

-55 to +150 °C

-20 V
±8 V

-2.5

-2.0

-3.5

-2.8

A

A

-12 A

-1.8 A

0.92 W

1.47 W
136 °C/W

84 °C/W

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = 25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

-20 - - V

- - -1 A

- - ±100 nA

VGS = 0V, ID = -250A
VDS = -16V, VGS = 0V

VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 5)

V

GS(th

R

DS (ON)

|Y
V

SD

-0.4 -0.6 -1.0 V
55 70

90 110

70 90

­110 150

|

fs

- 12 - S

- -0.7 -1 V

VDS = VGS, ID = -250A

= -4.5V, ID = - 1A

V

GS

V

= -2.5V, ID = -1A

mΩ

GS

V

= -1.8V, ID = -1A

GS

V

= -1.5V, ID = -1A

GS

VDS = -10V, ID = -1A

VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance

Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.

5. Device mounted on FR4 material with 1-inch
6 300ms pulse, pulse duty cycle  2%

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

2

(6.45-cm2), 2-oz. (0.071-mm thick) Cu

C
C
C

Q

Q

t

D(on

t

D(off

iss
oss
rss

R

G

Q

t

t

f

s
d

- 210 - pF

- 92 - pF

- 38 - pF

5.3 -

- 2.9 - nC

- 0.3 - nC

- 0.5 - nC

- 7.3 - ns

- 14.0 - ns

- 42.6 - ns

- 32 - ns

= -10V, VGS = 0V,

V

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz
V

= -4.5V, VDS = -10V,

GS

I

= -1A ,

D

V

= -10V, VGS = -4.5V,

DD

= -1A, RG = 20,

I

DS

DMP2070UCB6

Document number: DS35553 Rev. 2 - 2

2 of 6

www.diodes.com

October 2011

© Diodes Incorporated