Diodes DMP2066UFDE User Manual

Product Summary

I

D

TA = +25°C

-6.2A

-5.0A

-4.2A

V

R

(BR)DSS

36mΩ @ V

-20V

56mΩ @ VGS = -2.5V
75mΩ @ VGS = -1.8V

Package

DS(ON)

= -4.5V

GS

U-DFN2020-6

Type E

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

• General Purpose Interfacing Switch

• Power Management Functions

• Analog Switch

Pin1

U-DFN2020-6

Type E

Bottom View

D

6

D

5

SSG34

Bottom View

Internal Schematic

DMP2066UFDE

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• 0.6mm profile – ideal for low profile applications

• PCB footprint of 4mm

• Low Gate Threshold Voltage

• Low On-Resistance

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

2

Mechanical Data

• Case: U-DFN2020-6 Type E

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Weight: 0.0065 grams (approximate)

DD1

2

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMP2066UFDE-7 U-DFN2020-6 Type E 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

PC

DMP2066UFDE

Document number: DS35496 Rev. 5 - 2

PC = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)

YM

M = Month (ex: 9 = September)
Dot Denotes Pin 1

1 of 6

www.diodes.com

July 2012

© Diodes Incorporated

θ

)

g

g

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -1.8V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 5)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

Steady

State

t<5s

Steady

State

t<5s

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

DMP2066UFDE

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

P

Steady state

t<5s 123 °C/W

Steady state

t<5s 40 °C/W

R

P
R
R

T

J, TSTG

D

JA

θ

D

JA

θ

Jc

-20 V

±12 V

-6.2

-4.9

-7.5

-5.9

-4.2

-3.4

-5.2

-4.1

A

A

A

A

-25 A

2.5 A

0.66 W
189 °C/W

2.03 W

61 °C/W

9.3 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

DSS
DSS
GSS

-20

⎯ ⎯
⎯ ⎯
⎯ ⎯

-1

±100

V

VGS = 0V, ID = -250µA

µA

V

= -20V, VGS = 0V

nA

DS

V

= ±12.0V, VDS = 0V

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y

V

SD

-0.4

⎯
⎯

⎯

|

fs

⎯
⎯

⎯

25 36
33 56
50 75

9

-0.7 -1.2 V

-1.1 V

VDS = VGS, ID = -250μA
V

mΩ

V
V

⎯

S

V
VGS = 0V, IS = -2.1A

= -4.5V, ID = -4.6A

GS

= -2.5V, ID = -3.8A

GS

= -1.8V, ID = -2.0A

GS

= -10V, ID = -4.5A

DS

DYNAMIC CHARACTERISTICS (Note 8)

2 of 6

1537

146
127

10.4

14.4

2.6

2.7

13.7

14.0

79.1

35.5

⎯
⎯
⎯
⎯ Ω

⎯

⎯

⎯

⎯

⎯

⎯

⎯

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.

6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C

iss

C

oss

C

rss

R
Q

Q

s

Q

d

t

D(on

t

⎯

t

D(off

t

⎯

f

DMP2066UFDE

Document number: DS35496 Rev. 5 - 2

⎯
⎯
⎯

⎯

⎯

⎯

⎯

⎯

⎯

www.diodes.com

pF

V

= -10V, VGS = 0V

pF
pF

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz

= -10V, VGS = -4.5V

V

nC

ns

DS

= -4.5A

I

D

V

= -10V, VGS = -4.5V, RG = 6Ω,

DD

R

= 10Ω, I

L

= -1A

D

July 2012

© Diodes Incorporated