Diodes DMP2066LVT User Manual

Product Summary

V

R

(BR)DSS

-20V

45mΩ @ V
65mΩ @ VGS = -2.5V

DS(ON)

max

= -4.5V

GS

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

Applications

NEW PRODUCT

• General Purpose Interfacing Switch

• Power Management Functions

) and yet maintain superior switching

DS(on)

TSOT26

Top View

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

I

max

D

-4.5A

-3.8A

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TSOT26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.015 grams (approximate)

1

DD

2

DD

GS

3

Top View

Pin-Out

6

5

4

D

G

S

Equivalent Circuit

DMP2066LVT

e3

Ordering Information (Note 4)

Part Number Case Packaging

DMP2066LVT-7 TSOT26 3,000/Tape & Reel

DMP2066LVT-13 TSOT26 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds4. For packaging details, go to our website at http://www.diodes.com.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Shanghai A/T Site

26P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

DMP2066LVT

Document number: DS36578 Rev. 3 - 2

1 of 6

www.diodes.com

March 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 5) Continuous TA = +25°C
T

= +70°C

A

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Body-Diode Continuous Current (Note 5)

V

DSS

V

GSS

I

D

I

DM

I

S

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

t<10s 74

R

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

Steady State

t<10s 46

R

T

J, TSTG

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

STATIC PARAMETERS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

@ T

Gate-Body Leakage Current

Gate Threshold Voltage

Static Drain-Source On-Resistance

Static Drain-Source On-Resistance @ T

Forward Transconductance

Diode Forward Voltage

= +55°C(Note 8)

J

= +125°C (Note 8)

J

BV

I

DSS

I

GSS

V

GS(th)

R

DS (ON)

R

DS (ON)

g

V

DSS

FS

SD

⎯

-20

⎯ ⎯

⎯ ⎯

-0.4

⎯ ⎯

⎯

25
33

⎯ ⎯

⎯

-0.5 -0.72 -1.4 V

9

DYNAMIC PARAMETERS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

C

⎯

iss

C

⎯

oss

C

rss

Q

⎯

G

Q

⎯

GS

Q

GD

t

⎯

d(on)

t

⎯

r

t

d(off)

t

⎯

f

⎯

⎯

⎯

1496

130

116

14.4

2.6

2.7

8.5 30

11 60

61 130

25 100

DMP2066LVT

Document number: DS36578 Rev. 3 - 2

2 of 6

www.diodes.com

-20 V

±8

-4.5

-3.7

-20 A

-2.0 A

P

D

θJA

P

D

θJA

-55 to +150 °C

V

-1

-10

±100

μA

nA

-1.5 V

45
65

mΩ

72 mΩ

⎯

⎯

⎯

⎯

S

pF

pF

pF

⎯

⎯

nC

⎯

ns

DMP2066LVT

V

A

1.2 W

100

1.8 W

70

ID = -250µA, VGS = 0V

V

= -16V, VGS = 0V

DS

= -16V, VGS = 0V

V

DS

V

= 0V, VGS = ±8V

DS

V

= VGS, ID = -250µA

DS

= -4.5V, ID = -4.5A

V

GS

V

= -2.5V, ID = -3.8A

GS

V

= -4.5V, ID = -4.5A

GS

V

= -10V, ID = -4.5A

DS

IS = -2.1A, V

VDS = -15V, VGS = 0V
f = 1.0MHz

V

= -10V, VGS = -4.5V,

DS

= -4.5A

I

D

V

= -5V, VGS = -4.5V,

DS

= -1A, RG = 6.0Ω

I

D

°C/W

°C/W

= 0V

GS

March 2014

© Diodes Incorporated