Product Summary
V
R
(BR)DSS
-20V
45mΩ @ V
65mΩ @ VGS = -2.5V
DS(ON)
max
= -4.5V
GS
TA = +25°C
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
Applications
NEW PRODUCT
• General Purpose Interfacing Switch
• Power Management Functions
) and yet maintain superior switching
DS(on)
TSOT26
Top View
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
I
max
D
-4.5A
-3.8A
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: TSOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.015 grams (approximate)
1
DD
2
DD
GS
3
Top View
Pin-Out
6
5
4
D
G
S
Equivalent Circuit
DMP2066LVT
e3
Ordering Information (Note 4)
Part Number Case Packaging
DMP2066LVT-7 TSOT26 3,000/Tape & Reel
DMP2066LVT-13 TSOT26 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds4. For packaging details, go to our website at http://www.diodes.com.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Shanghai A/T Site
26P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
DMP2066LVT
Document number: DS36578 Rev. 3 - 2
1 of 6
www.diodes.com
March 2014
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Continuous TA = +25°C
T
= +70°C
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Body-Diode Continuous Current (Note 5)
V
DSS
V
GSS
I
D
I
DM
I
S
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
NEW PRODUCT
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
t<10s 74
R
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady State
t<10s 46
R
T
J, TSTG
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
STATIC PARAMETERS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ T
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Static Drain-Source On-Resistance @ T
Forward Transconductance
Diode Forward Voltage
= +55°C(Note 8)
J
= +125°C (Note 8)
J
BV
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
R
DS (ON)
g
V
DSS
FS
SD
⎯
-20
⎯ ⎯
⎯ ⎯
-0.4
⎯ ⎯
⎯
25
33
⎯ ⎯
⎯
-0.5 -0.72 -1.4 V
9
DYNAMIC PARAMETERS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
C
⎯
iss
C
⎯
oss
C
rss
Q
⎯
G
Q
⎯
GS
Q
GD
t
⎯
d(on)
t
⎯
r
t
d(off)
t
⎯
f
⎯
⎯
⎯
1496
130
116
14.4
2.6
2.7
8.5 30
11 60
61 130
25 100
DMP2066LVT
Document number: DS36578 Rev. 3 - 2
2 of 6
www.diodes.com
-20 V
±8
-4.5
-3.7
-20 A
-2.0 A
P
D
θJA
P
D
θJA
-55 to +150 °C
V
-1
-10
±100
μA
nA
-1.5 V
45
65
mΩ
72 mΩ
⎯
⎯
⎯
⎯
S
pF
pF
pF
⎯
⎯
nC
⎯
ns
DMP2066LVT
V
A
1.2 W
100
1.8 W
70
ID = -250µA, VGS = 0V
V
= -16V, VGS = 0V
DS
= -16V, VGS = 0V
V
DS
V
= 0V, VGS = ±8V
DS
V
= VGS, ID = -250µA
DS
= -4.5V, ID = -4.5A
V
GS
V
= -2.5V, ID = -3.8A
GS
V
= -4.5V, ID = -4.5A
GS
V
= -10V, ID = -4.5A
DS
IS = -2.1A, V
VDS = -15V, VGS = 0V
f = 1.0MHz
V
= -10V, VGS = -4.5V,
DS
= -4.5A
I
D
V
= -5V, VGS = -4.5V,
DS
= -1A, RG = 6.0Ω
I
D
°C/W
°C/W
= 0V
GS
March 2014
© Diodes Incorporated
R
CUR
RENT
R
CUR
RENT
R
R
OUR
ON-R
R
R
OUR
ON-R
5
NEW PRODUCT
DMP2066LVT
20
15
(A)
10
AIN
D
5
I, D
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN -SOURCE VOLTAGE(V)
DS
Figure 1 Typical Output Characteristics
0.08
Ω
20
15
(A)
10
AIN
D
5
I, D
0
0 0.5 1 1.5 2 2.5 3
V , GATE SOURCE VOLTAGE(V)
GS
Figure 2 Typical Transfer Characteristics
0.0
Ω
V = 10V
GS
T =85°C
A
T =125°C
A
T =150°C
A
0.04
0.06
ESISTANCE( )
V = 1.8V
GS
V = 2.5V
GS
ESISTANCE( )
0.03
0.04
CE
AIN-S
0.02
, D
DS(ON)
0
0 5 10 15 20
I , DRAIN SOURCE CURRENT
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.7
1.5
1.3
1.1
(Normalized)
0.9
V= 4.5V
GS
CE
0.02
AIN-S
0.01
, D
DS(ON)
0
0 5 10 15 20
I , DRAIN CURRENT (A)
D
T =25°C
A
T =-55°C
A
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
0.06
Ω
0.05
0.04
0.03
0.02
0.7
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE
0.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Figure 5 On-Resistance Variation with Temperature
°
0.01
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Figure 6 On-Resistance Variation with Temperature
°
DMP2066LVT
Document number: DS36578 Rev. 3 - 2
3 of 6
www.diodes.com
March 2014
© Diodes Incorporated
GATE T
H
RESH
O
O
TAG
2
GE CUR
RENT
C
UNC
TION CAPACITANC
F
NEW PRODUCT
1.
1
E (V)
L
0.8
LD V
0.6
I = -250µA
D
0.4
0.2
GS(th)
V,
0
-50-25 0255075100125150
T , JUNCTION TEMPERATURE ( C)
J
Figure 7 Gate Threshold Variation vs. Ambient Temperatur e
100000
10000
(nA)
1000
I= 1mA
D
°
T = 150 CA°
DMP2066LVT
20
16
12
8
S
I , SOURCE CURRENT (A)
4
0
0.2 0.4 0.6 0.8 1 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
10000
f = 1MHz
)
E (p
T= 25CA°
C
ISS
100
DSS
I, LEAKA
10
1
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
T = A85 C
T = A25 C
°
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
5
4
3
2
1
GS
V , GATE SOURCE VOLTAGE (V)
1000
, J
T
°
C
OSS
100
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
RSS
-20-16-12-8-40
0
024681012141618
Q , TOTAL GATE CHARGE (nC)
G
Figure 11 Gate Charge Characteristics
DMP2066LVT
Document number: DS36578 Rev. 3 - 2
4 of 6
www.diodes.com
March 2014
© Diodes Incorporated
θ
DMP2066LVT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
TSOT26
Dim Min Max Typ
A
A1 0.01 0.10
A2 0.84 0.90
D
E
E1
b 0.30 0.45
c 0.12 0.20
e
e1
L 0.30 0.50
L2
θ 0° 8° 4°
θ1 4° 12°
All Dimensions in mm
1.00
−
− −
− −
− −
− −
− −
− −
−
−
−
2.90
2.80
1.60
−
−
0.95
1.90
0.25
−
NEW PRODUCT
E1
A2
A
A1
D
e1
E
c
L
4x 1
e
6x b
θ
L2
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y1
DMP2066LVT
Document number: DS36578 Rev. 3 - 2
C C
X (6x)
Y (6x)
Dimensions Value (in mm)
5 of 6
www.diodes.com
C 0.950
X 0.700
Y 1.000
Y1 3.199
March 2014
© Diodes Incorporated
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
NEW PRODUCT
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
DMP2066LVT
DMP2066LVT
Document number: DS36578 Rev. 3 - 2
6 of 6
www.diodes.com
March 2014
© Diodes Incorporated
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