Product Summary
V
R
(BR)DSS
40mΩ @ V
-30V
70mΩ @ VGS = -2.5V
DS(ON)
max
= -4.5V
GS
TA = +25°C
Description
This MOSFET has been designed to minimize the on-state
resistance (R
performance, making it ideal for high efficiency power management
applications.
NEW PRODUCT
) and yet maintain superior switching
DS(on)
Applications
• Backlighting
• Power Management Functions
• DC-DC Converters
SO-8
Top View
I
max
D
-6.5A
-5.0A
S
S
G
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
Top View
Internal Schematic
DMP2066LSS
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Weight: 0.074g (approximate)
D
DS
D
G
D
D
Equivalent circuit
S
Ordering Information (Note 4)
Part Number Case Packaging
DMP2066LSS-13 SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8 5
P2066LS
WW
YY
1 4
Chengdu A/T Site Shanghai A/T Site
DMP2066LSS
Document number: DS31522 Rev. 3 - 2
8 5
P2066LS
YY
WW
1 4
= Manufacturer’s Marking
P2066LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 of 5
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November 2013
© Diodes Incorporated
DMP2066LSS
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Steady
State
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
T
= +25°C
A
= +70°C
T
A
V
DSS
V
GSS
I
D
I
DM
-20 V
±12
-6.5
-5.2
V
A
-26 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
NEW PRODUCT
P
R
T
J, TSTG
D
JA
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
DSS
I
⎯ ⎯
DSS
I
⎯ ⎯
GSS
-20
⎯ ⎯
-1 μA
±100
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
GS(th
R
DS (ON)
V
g
fs
SD
-0.6
⎯ ⎯
⎯ ⎯
⎯
⎯
9
-1.2 V
40
70
⎯
-0.5 -0.72 -1.4 V
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
C
iss
C
oss
C
rss
R
⎯
g
Q
Q
s
Q
d
t
D(on
t
t
D(off
t
f
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
820
200
160
10.4
14.4
2.6
2.7
13.7
14.0
79.1
35.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
DMP2066LSS
Document number: DS31522 Rev. 3 - 2
2 of 5
www.diodes.com
2.5 W
50 °C/W
-55 to +150 °C
V
V
= 0V, ID = -250μA
GS
V
= -20V, VGS = 0V
nA
mΩ
S
DS
VGS = ±12V, VDS = 0V
V
= VGS, ID = -250μA
DS
= -4.5V, ID = -5.8A
V
GS
V
= -2.5V, ID = -3.8A
GS
V
= -10V, ID = -4.6A
DS
VGS = 0V, IS = -2.1A
pF
pF
pF
Ω
nC
ns
= -15V, VGS = 0V
V
DS
f = 1.0MHz
= 0V, VGS = 0V,
V
DS
f = 1.0MHz
= -10V, VGS = -4.5V
V
DS
I
= -4.5A
D
= -10V, VGS = -4.5V,
V
DD
= 6Ω, RL = 10Ω, ID = -1A
R
G
November 2013
© Diodes Incorporated