Diodes DMP2066LSN User Manual
θ
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low R
• 40 mΩ @V
• 70 mΩ @V
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Note 4)
NEW PRODUCT
Maximum Ratings @T
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous TA = 25°C
T
Pulsed Drain Current (Note 2)
Body-Diode Continuous Current (Note 1)
DS(ON)
:
= -4.5V
GS
= -2.5V
GS
TOP VIEW
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
= 70°C
A
Mechanical Data
• Case: SC-59
• Case Material – Molded Plastic. UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
• Terminal Connections: See Diagram
• Marking Information: See Page 4
• Ordering Information: See page 4
• Weight: 0.014 grams (approximate)
SC-59
Drain
Gate
Source
Internal Schematic
V
V
Method 208
DSS
GSS
I
D
I
DM
I
S
G
Pin Configuration
DMP2066LSN
D
S
-20 V
±12
-4.6
-3.7
-18 A
2.0 A
V
A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1); Steady-State
Operating and Storage Temperature Range
Notes: 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
P
D
R
JA
T
, T
J
STG
DMP2066LSN
Document number: DS31467 Rev. 4 - 2
1 of 5
www.diodes.com
1.25 W
100
-55 to +150
°C/W
°C
August 2011
© Diodes Incorporated
)
)
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r
)
R
N
C
URR
N
T
R
N
C
U
R
REN
T
Electrical Characteristics @T
A
Characteristic Symbol Min Typ Max Unit Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 5)
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Note 5)
Diode Forward Voltage (Note 5)
Maximum Body-Diode Continuous Current (Note 1)
DYNAMIC PARAMETERS (Note 6)
Input Capacitance
Output Capacitance
NEW PRODUCT
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes: 5. Test pulse width t = 300μs.
6. Guaranteed by design. Not subject to production testing.
30
V = 10V
GS
V = 4.5V
GS
= 25°C unless otherwise specified
BV
I
V
GS(th
I
D (ON
R
DS (ON)
g
V
C
C
C
Q
Q
t
d(on
t
d(off
DSS
DSS
GSS
FS
SD
I
S
iss
oss
rss
R
Q
GS
GD
t
t
G
G
f
-20
⎯ ⎯
⎯ ⎯
-0.6 -0.96 -1.2 V
-15
⎯
⎯
-0.5 -0.72 -1.4 V
⎯ ⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯ ⎯
⎯ ⎯
29
55
9
820
200
160
2.5
10.1
1.5
4.3
4.4
9.9
28.0
23.4
20
V = 5.0V
DS
V
-1
±100
μA
nA
A
40
70
⎯
mΩ
S
1.7 A
⎯
⎯
⎯
pF
pF
pF
⎯ Ω
⎯
⎯
nC
⎯
⎯
⎯
⎯
ns
⎯
DMP2066LSN
ID = -250μA, VGS = 0V
= -20V, VGS = 0V
V
DS
V
= 0V, VGS = ±12V
DS
V
= VGS, ID = -250μA
DS
V
= -4.5V, VDS = -5V
GS
= -4.5V, ID = -4.6A
V
GS
= -2.5V, ID = -3.8A
V
GS
V
= -10V, ID = -4.5A
DS
IS = -2.1A, V
V
= -15V, VGS = 0V
DS
f = 1.0MHz
= 0V, VGS = 0V
V
DS
f = 1.0MHz
= -10V, VGS = -4.5V,
V
DS
= -4.5A
I
D
V
= -10V, VGS = -4.5V,
DS
I
= -1A, RG = 6.0Ω
D
GS
= 0V
⎯
24
(A)
V = 3.0V
E
18
GS
12
AI
D
I, D
V = 2.5V
6
V = 2.0V
V = 1.5V
GS
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristic
GS
GS
16
(A)
12
8
AI
D
I, D
4
0
T = 150°C
A
T = 125°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
0 0.5 1 1.5 2 2.5 3 3.5 4
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristic
DMP2066LSN
Document number: DS31467 Rev. 4 - 2
2 of 5
www.diodes.com
August 2011
© Diodes Incorporated
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