Diodes DMP2066LSD User Manual

4

8

5

066

Y

W

4

8

5

Y

Product Summary

V

R

(BR)DSS

-20V

40mΩ @ V

70mΩ @ VGS = -2.5V

DS(on) max

= -4.5V

GS

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R

performance, making it ideal for high efficiency power management

applications.

Applications

NEW PRODUCT

• Backlighting

• Power Management Functions

• DC-DC Converters

SO-8

TOP VIEW

) and yet maintain superior switching

DS(ON)

S1

G1

S2

G2

TOP VIEW

Internal Schematic

I

D

TA = +25°C

-5.8A

-4.4A

D1

D1

D2

D2

DMP2066LSD

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Dual P-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections Indicator: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

• Weight: 0.072 grams (approximate)

D1

G1

G2

S1

P-Channel MOSFET

P-Channel MOSFET

e3

D2

S2

Ordering Information (Note 4)

Part Number Case Packaging

DMP2066LSD-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMP2066LSD

Document number: DS31453 Rev. 4 - 2

P2066LD

Y WW

1

Chengdu A/T Site

P2

LD

Y W

1

Shanghai A/T Site

1 of 5

www.diodes.com

= Manufacturer’s Marking
P2066LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

January 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 5) Steady
State

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

NEW PRODUCT

Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage (Note 7)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

SWITCHING CHARACTERISTICS

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Notes: 5. Device mounted on 2 oz. 1” x 1” Copper pads on 2” x 2” FR-4 PCB.

6. Pulse width ≤10μS, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.

DMP2066LSD

Document number: DS31453 Rev. 4 - 2

= +25°C

T

A

T

= +70°C

A

BV

DSS

I

⎯ ⎯

DSS

I

GSS

V

GS(th)

R

DS (ON)

g

fs

V

SD

C

iss

C

oss

C

⎯

rss

R

⎯

G

Q

⎯

G

Q

GS

Q

GD

t

d(on)

t

r

t

d(off)

t

⎯

f

-20

⎯ ⎯

-0.6 -0.94 -1.2 V

⎯

⎯

⎯

-0.5 -0.72 -1.4 V

⎯

⎯

⎯

⎯

⎯

⎯

⎯

2 of 5

www.diodes.com

V

DSS

V

GSS

I

D

I

DM

P

D

R

JA

θ

T

J, TSTG

⎯ ⎯

29
55

9

820

200

160

2.5

10.1

1.5

4.3

4.4

9.9

28.0

23.4

-20 V

±12

-5.8

-4.6

-20 A

2.0 W

62.5 °C/W

-55 to +150 °C

V

-1 µA

±100

40
70

⎯

⎯

⎯

⎯

nA

mΩ

S

pF

pF

pF

⎯ Ω

⎯

⎯

nC

⎯

⎯

⎯

⎯

ns

⎯

DMP2066LSD

V

A

V

= 0V, ID = -250µA

GS

V

= -20V, VGS = 0V

DS

VGS = ±12V, VDS = 0V

V

= VGS, ID = -250µA

DS

V

= -4.5V, ID = -4.6A

GS

= -2.5V, ID = -3.8A

V

GS

V

= -10V, ID = -4.6A

DS

VGS = 0V, IS = -2.1A

= -15V, VGS = 0V

V

DS

f = 1.0MHz

= 0V, VGS = 0V

V

DS

f = 1.0MHz

V

= -10V, VGS = -4.5V,

DS

= -5.9A

I

D

V

= -10V, VGS = -4.5V,

DS

= -1A, RG = 6.0Ω

I

D

January 2014

© Diodes Incorporated