Diodes DMP2066LDM User Manual

Features

• Low R

• 40 mΩ @V

• 70 mΩ @V

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

DS(ON)

:

= -4.5V

GS

= -2.5V

GS

SOT26

Top View

DMP2066LDM

P-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT26

• Case Material – Molded Plastic. UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Solderable per MIL-STD-202,

Method 208

• Terminal Connections: See Diagram

• Weight: 0.008 grams (approximate)

D

D

D

Top View

Internal Schematic

S

D

G

Ordering Information (Note 3)

Part Number Case Packaging

DMP2066LDM-7 SOT26 3000/Tape & Reel

DMP2066LDMQ-7 SOT26 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP2066LDM

Document number: DS31464 Rev. 4 - 2

DMC

DMC = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)

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December 2011

© Diodes Incorporated

θ

)

)

)

r

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 4) Continuous TA = 25°C
T

= 70°C

A

Pulsed Drain Current (Note 5)
Body-Diode Continuous Current (Note 4)

V

DSS

V

GSS

I

D

I

DM

I

S

Thermal Characteristics

NEW PRODUCT

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4); Steady-State
Operating and Storage Temperature Range

Characteristic Symbol Value Unit

P

D

R

JA

T

, T

J

STG

DMP2066LDM

-20 V

±12

-4.6

-3.7

-18 A

2.0 A

1.25 W
100

-55 to +150

V
A

°C/W

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

STATIC PARAMETERS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 6)

Static Drain-Source On-Resistance (Note 6)

R

Forward Transconductance (Note 6)
Diode Forward Voltage (Note 6)
Maximum Body-Diode Continuous Current (Note 4)

BV

DSS

DSS

I

GSS

V

GS(th

I

D (ON

DS (ON)

g

FS

V

SD

I

S

-20
⎯ ⎯
⎯ ⎯

-0.6 -0.96 -1.2 V

-15

⎯
⎯

-0.5 -0.72 -1.4 V

⎯ ⎯

⎯ ⎯

-1

±100

⎯ ⎯

29
55

9

40
70

⎯

1.7 A

V

ID = -250μA, VGS = 0V
μA
nA

A

mΩ

S

= -20V, VGS = 0V

V

DS

V

= 0V, VGS = ±12V

DS

V

= VGS, ID = -250μA

DS

V

= -4.5V, VDS = -5V

GS

= -4.5V, ID = -4.6A

V

GS

= -2.5V, ID = -3.8A

V

GS

V

= -10V, ID = -4.6A

DS

IS = -2.1A, V

GS

= 0V

⎯

DYNAMIC PARAMETERS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Resistance

C

iss

C

oss

C

rss

R

⎯

G

⎯

⎯

⎯

820
200
160

2.5

⎯
⎯
⎯

⎯ Ω

pF
pF
pF

V

= -15V, VGS = 0V

DS

f = 1.0MHz

= 0V, VGS = 0V

V

DS

f = 1.0MHz

SWITCHING CHARACTERISTICS

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 4. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.

5. Repetitive Rating, pulse width limited by junction temperature.

6. Test pulse width t = 300μs.

7. Guaranteed by design. Not subject to production testing.

DMP2066LDM

Document number: DS31464 Rev. 4 - 2

Q

G

Q

GS

Q

GD

t

d(on

t

t

d(off

t

f

www.diodes.com

⎯

⎯

⎯

⎯

⎯

⎯

⎯

2 of 5

10.1

1.5

4.3

4.4

9.9

28.0

23.4

⎯

⎯

⎯

⎯

⎯

⎯

⎯

nC

ns

V

= -10V, VGS = -4.5V,

DS

I

= -4.5A

D

V

= -10V, VGS = -4.5V,

DS

I

= -1A, RG = 6.0Ω

D

December 2011

© Diodes Incorporated

RAIN C

U

R

REN

T

RAIN CUR

REN

T

R

RAIN-SOUR

CE O

N-R

TAN

C

R

RAIN

OUR

C

GAT

THR

H

O

O

T

G

NEW PRODUCT

30

V = 10V

GS

V = 4.5V

GS

24

(A)

18

12

D

I, D

6

V = 1.5V

GS

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN-SOURCE VOLT AGE (V)

DS

Fig. 1 Typical Output Characteristic

1

Ω

V = 3.0V

GS

V = 2.5V

GS

V = 2.0V

GS

20

V = 5.0V

DS

16

(A)

12

8

D

I, D

4

0

T = 150°C

A

T = 125°C

A

T = 25°C

T = -55°C

A

0 0.5 1 1.5 2 2.5 3 3.5 4

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 T ypical Transfer Characteristic

0.08

Ω

E ( )

V = 4.5V

GS

DMP2066LDM

T = 85°C

A

A

E

-S

, D

0.1

V = 2.5V

GS

V = 4.5V

GS

V = 10V

GS

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0.01
0 6 12 18 24 30

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 T ypical On-Resistance

vs. Drain Current and Gate Voltage

1.6

1.4

V = 10V

GS

I = 10A

D

1.2

1.0

DS(ON)

V = 4.5V

GS

I = 5A

D

0.06

ESIS

0.04

0.02

, D

DS(ON)

0

0 6 12 18 24 30

-I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

2.4

E (V)

2.0

A
L

1.6

LD V

ES

E

1.2

0.8

I = 1mA

D

I = 250µA

D

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 Normalized On-Resistance vs. Ambient T emperature

0.4

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 6 Gat e Threshol d Variation vs. Ambient Temperature

DMP2066LDM

Document number: DS31464 Rev. 4 - 2

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OUR

CE CUR

REN

T

C, TOT

CAPACITANC

F

T

R

T T

HER

R

TANC

20

T = 25°C

A

16

(A)

12

8

S

I, S

4

NEW PRODUCT

0

0 0.2 0.4 0.6 0.8 1 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 7 Diode Forward Voltag e vs . C ur r e nt

1

D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

Package Outline Dimensions

K

J

DMP2066LDM

10,000

)
E (p

1,000

AL

T

C

C

oss

C

rss

100

0 5 10 15 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 8 Typical Total Capacitance

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 120°C/W

θ

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

t , PULSE DURATION TIME (s)

1

Fig. 9 Transient Therm al Respo nse

A

SOT26

Dim Min Max Typ

B C

A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D

⎯ ⎯

H

H 2.90 3.10 3.00

J 0.013 0.10 0.05

0.95

K 1.00 1.30 1.10

M

L 0.35 0.55 0.40

M 0.10 0.20 0.15

0° 8°

D

L

α

All Dimensions in mm

⎯

f = 1MHz

iss

DMP2066LDM

Document number: DS31464 Rev. 4 - 2

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December 2011

© Diodes Incorporated

DMP2066LDM

Suggested Pad Layout

NEW PRODUCT

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

G

Z

Y

X

EE

C

IMPORTANT NOTICE

LIFE SUPPORT

Dimensions Value (in mm)

Z
G
X
Y
C 2.40

E

3.20

1.60

0.55

0.80

0.95

DMP2066LDM

Document number: DS31464 Rev. 4 - 2

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December 2011

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