Diodes DMP2066LDM User Manual

Features

• Low R

• 40 mΩ @V

• 70 mΩ @V

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

DS(ON)

:

= -4.5V

GS

= -2.5V

GS

SOT26

Top View

DMP2066LDM

P-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT26

• Case Material – Molded Plastic. UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Solderable per MIL-STD-202,

Method 208

• Terminal Connections: See Diagram

• Weight: 0.008 grams (approximate)

D

D

D

Top View

Internal Schematic

S

D

G

Ordering Information (Note 3)

Part Number Case Packaging

DMP2066LDM-7 SOT26 3000/Tape & Reel

DMP2066LDMQ-7 SOT26 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP2066LDM

Document number: DS31464 Rev. 4 - 2

DMC

DMC = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)

1 of 5

www.diodes.com

December 2011

© Diodes Incorporated

θ

)

)

)

r

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 4) Continuous TA = 25°C
T

= 70°C

A

Pulsed Drain Current (Note 5)
Body-Diode Continuous Current (Note 4)

V

DSS

V

GSS

I

D

I

DM

I

S

Thermal Characteristics

NEW PRODUCT

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4); Steady-State
Operating and Storage Temperature Range

Characteristic Symbol Value Unit

P

D

R

JA

T

, T

J

STG

DMP2066LDM

-20 V

±12

-4.6

-3.7

-18 A

2.0 A

1.25 W
100

-55 to +150

V
A

°C/W

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

STATIC PARAMETERS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 6)

Static Drain-Source On-Resistance (Note 6)

R

Forward Transconductance (Note 6)
Diode Forward Voltage (Note 6)
Maximum Body-Diode Continuous Current (Note 4)

BV

DSS

DSS

I

GSS

V

GS(th

I

D (ON

DS (ON)

g

FS

V

SD

I

S

-20
⎯ ⎯
⎯ ⎯

-0.6 -0.96 -1.2 V

-15

⎯
⎯

-0.5 -0.72 -1.4 V

⎯ ⎯

⎯ ⎯

-1

±100

⎯ ⎯

29
55

9

40
70

⎯

1.7 A

V

ID = -250μA, VGS = 0V
μA
nA

A

mΩ

S

= -20V, VGS = 0V

V

DS

V

= 0V, VGS = ±12V

DS

V

= VGS, ID = -250μA

DS

V

= -4.5V, VDS = -5V

GS

= -4.5V, ID = -4.6A

V

GS

= -2.5V, ID = -3.8A

V

GS

V

= -10V, ID = -4.6A

DS

IS = -2.1A, V

GS

= 0V

⎯

DYNAMIC PARAMETERS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Resistance

C

iss

C

oss

C

rss

R

⎯

G

⎯

⎯

⎯

820
200
160

2.5

⎯
⎯
⎯

⎯ Ω

pF
pF
pF

V

= -15V, VGS = 0V

DS

f = 1.0MHz

= 0V, VGS = 0V

V

DS

f = 1.0MHz

SWITCHING CHARACTERISTICS

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 4. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.

5. Repetitive Rating, pulse width limited by junction temperature.

6. Test pulse width t = 300μs.

7. Guaranteed by design. Not subject to production testing.

DMP2066LDM

Document number: DS31464 Rev. 4 - 2

Q

G

Q

GS

Q

GD

t

d(on

t

t

d(off

t

f

www.diodes.com

⎯

⎯

⎯

⎯

⎯

⎯

⎯

2 of 5

10.1

1.5

4.3

4.4

9.9

28.0

23.4

⎯

⎯

⎯

⎯

⎯

⎯

⎯

nC

ns

V

= -10V, VGS = -4.5V,

DS

I

= -4.5A

D

V

= -10V, VGS = -4.5V,

DS

I

= -1A, RG = 6.0Ω

D

December 2011

© Diodes Incorporated