Diodes DMP2047UCB4 User Manual
Product Summary
I
V
R
(BR)DSS
-20V
47m @ V
60m @ VGS = -2.5V
DS(ON)
GS
= -4.5V
D
TA = +25°C
-4.1A
-3.6A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
Battery Management
Load Switch
Battery Protection
ESD PROTECTED TO 3kV
U-WLB1010-4
DMP2047UCB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low Qg & Qgd
Small Footprint
Low Profile 0.62mm height
ESD Protected Up To -3KV
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-WLB1010-4
Terminal Connections: See Diagram Below
Weight: 0.0018 grams (approximate)
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMP2047UCB4-7 U-WLB1010-4 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMP2047UCB4
Document number: DS36154 Rev. 5 - 2
DW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
1 of 6
www.diodes.com
October 2013
© Diodes Incorporated
V
V
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -2.5V
Pulsed Drain Current (Note 6)
Thermal Characteristics
Characteristic Symbol
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient @ T
Thermal Resistance, Junction to Case @ T
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @ T
Operating and Storage Temperature Range
C
= +25°C
Steady
State
Steady
State
= +25°C (Note 7) R
A
= +25°C (Note 7) R
= +25°C (Note 5) R
A
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
T
DMP2047UCB4
alue Unit
V
DSS
V
GSS
I
D
I
D
I
DM
P
D
JA
JC
P
D
JA
, T
J
STG
-20 V
-6 V
-4.1
-3.2
-3.6
-2.8
A
A
16 A
alue Unit
1.0 W
127 °C/W
25.8 °C/W
1.66 W
77 °C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
BV
DSS
I
GSS
DSS
GSS
-20
-6.0
— —
— —
—
—
— V
— V
-1 A
-100 nA
VGS = 0V, ID = -250A
VDS = 0V, IG = -250A
VDS = -16V, VGS = 0V
VGS = -6V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Reverse Recovery Charge
Reverse Recovery Time
V
R
DS(ON)
|Y
V
GS(th)
SD
Q
t
rr
-0.4 -0.8 -1.2 V
— —
— —
—
|
fs
—
— 3.07 —
rr
— 13.14 —
3.7 — S
-0.7 -1.0 V
47
60
VDS = VGS, ID = -250A
= -4.5V, ID =-1A
V
m
GS
V
= -2.5V, ID = -1A
GS
VDS = -10V, ID = -1A
= 0V, IS = -1A
V
GS
nC
V
= –10V, IF = –1A,
DD
di/dt =100A/s
ns
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Charge at Vth
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR4 material with 1-inch2 (6.45-cm
6. Repetitive rating, pulse width limited by junction temperature.
7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
2
), 2-oz. (0.071-mm thick) Cu.
C
C
C
Q
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
g
gs
gd
g(th)
t
r
t
f
—
— 116 —
— 11 —
— 2.3 —
— 0.2 —
— 0.4 —
— 0.2 —
— 7.9 —
— 10.7 —
— 48 —
— 38 —
218
—
pF
nC
ns
= -10V, VGS = 0V,
V
DS
f = 1.0MHz
= -4.5V, VDS = -10V,
V
GS
= -1A
I
D
= -10V, VGS = -2.5V,
V
DS
= 20, ID = -1A
R
G
DMP2047UCB4
Document number: DS36154 Rev. 5 - 2
2 of 6
www.diodes.com
October 2013
© Diodes Incorporated
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