Diodes DMP2039UFDE4 User Manual

Product Summary

I

V

(BR)DSS

-25V

R

26mΩ @ V
40mΩ @ VGS = -1.8V

DS(on) max

= -4.5V

GS

D

TA = 25°C

-7.3

-6.0

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• Load Switching

• Battery Management Application

• Power Management Functions

) and yet maintain superior switching

DS(on)

X2-DFN2020-6

ESD PROTECTED

Bottom View Equivalent Circuit

Top View

DMP2039UFDE4

25V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low R

• 0.4mm profile – ideal for low profile applications

• PCB footprint of 4mm

• Low Input Capacitance

• ESD Protected Gate

• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

– ensures on state losses are minimized

DS(ON)

2

Mechanical Data

• Case: X2-DFN2020-6

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Drain

Gate

Gate
Protection
Diode

Bottom View

Internal Schematic

Source

Ordering Information (Note 3)

Part Number Case Packaging

DMP2039UFDE4-7 X2-DFN2020-6 3,000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

PD

DMP2039UFDE4

Document number: DS35675 Rev. 3 - 2

PD = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)

YM

M = Month (ex: 9 = September)
Dot Denotes Pin 1

1 of 6

www.diodes.com

March 2012

© Diodes Incorporated

θ

)

g

g

g

g

)

r

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -1.8V

Steady

State

t<5s

Steady

State

t<5s

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

T

= 25°C

Total Power Dissipation (Note 4)

Thermal Resistance, Junction to Ambient (Note 4)

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

A

TA = 70°C

Steady state

t<5s 113

T

= 25°C

A

TA = 70°C

Steady state

t<5s 33
Thermal Resistance, Junction to Case (Note 5) Steady state
Operating and Storage Temperature Range

DMP2039UFDE4

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

P

D

R

JA

θ

P

D

R

JA

θ

R

JC

T

J, TSTG

-25 V
±8 V

-7.3

-5.8

-9.2

-7.3

-6.0

-4.7

-7.6

-6.0

A

A

A

A

-60 A

-2.0 A

0.69

0.44
182

2.4

1.5
52

W

°C/W

W

°C/W

9.1 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-25

⎯ ⎯

⎯ ⎯
⎯ ⎯

-1

±10

V

VGS = 0V, ID = -250μA

µA

µA

= -25V, VGS = 0V

V

DS

V

= ±8.0V, VDS = 0V

GS

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 5)

V

R

DS (ON)

|Y
V

GS(th

fs

SD

-0.4

⎯

⎯

⎯

⎯

| ⎯

⎯

⎯

-1.0 V
19 26
24 33
29 40

mΩ

35 70
14

⎯

mS

-0.7 -1.0 V

VDS = VGS, ID = -250μA

= -4.5V, ID = -6.4A

V

GS

VGS = -2.5V, ID = -4.8A
VGS = -1.8V, ID = -2.5A
VGS = -1.5V, ID = -1.5A
V

= -5V, ID = -4A

DS

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Guaranteed by design. Not subject to production testing.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

6. Short duration pulse test used to minimize self-heating effect

DMP2039UFDE4

Document number: DS35675 Rev. 3 - 2

C

⎯

iss

C

⎯

oss

C

rss

R
Q

Q

s

Q

d

t

D(on

t

t

D(off

t

f

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

www.diodes.com

2 of 6

2530

203
177

9.1

28.2

48.7

3.2

5.0

15.1

23.5

137.6

⎯

⎯
⎯

pF
pF
pF

⎯ Ω

⎯

⎯

nC

⎯

⎯

⎯

⎯

nS

⎯

V

= -15V, VGS = 0V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz

= -15V, ID = -4.0A

V

DS

V

= -15V, VGS = -4.5V, RG = 1Ω,

DD

= -4.0A

I

D

March 2012

© Diodes Incorporated