Diodes DMP2039UFDE4 User Manual

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Page 1

Product Summary

(BR)DSS

-25V

26mΩ @ V 40mΩ @ VGS = -1.8V

DS(on) max

= -4.5V

TA = 25°C

-7.3

-6.0

Description and Applications

This new generation MOSFET has been designed to minimize the onstate resistance (R performance, making it ideal for high efficiency power management applications.

• Load Switching

• Battery Management Application

• Power Management Functions

) and yet maintain superior switching

DS(on)

X2-DFN2020-6

ESD PROTECTED

Bottom View Equivalent Circuit

Top View

DMP2039UFDE4

25V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low R

• 0.4mm profile – ideal for low profile applications

• PCB footprint of 4mm

• Low Input Capacitance

• ESD Protected Gate

• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Mechanical Data

• Case: X2-DFN2020-6

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Drain

Gate

Gate Protection Diode

Bottom View

Internal Schematic

Source

Ordering Information (Note 3)

Part Number Case Packaging

DMP2039UFDE4-7 X2-DFN2020-6 3,000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP2039UFDE4

Document number: DS35675 Rev. 3 - 2

PD = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September) Dot Denotes Pin 1

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Page 2

)

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -1.8V

Steady

State

t<5s

Steady

State

t<5s

Pulsed Drain Current (10µs pulse, duty cycle = 1%) Continuous Source-Drain Diode Current

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

= 25°C

Total Power Dissipation (Note 4)

Thermal Resistance, Junction to Ambient (Note 4)

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

TA = 70°C

Steady state

t<5s 113

= 25°C

TA = 70°C

Steady state

t<5s 33 Thermal Resistance, Junction to Case (Note 5) Steady state Operating and Storage Temperature Range

DMP2039UFDE4

DSS

GSS

J, TSTG

-25 V ±8 V

-7.3

-5.8

-9.2

-7.3

-6.0

-4.7

-7.6

-6.0

-60 A

-2.0 A

0.69

0.44 182

2.4

1.5 52

°C/W

9.1 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

DSS

GSS

DSS

-25

⎯ ⎯

⎯ ⎯ ⎯ ⎯

-1

±10

VGS = 0V, ID = -250μA

µA

= -25V, VGS = 0V

= ±8.0V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage (Note 5)

DS (ON)

|Y V

GS(th

-0.4

⎯

| ⎯

⎯

-1.0 V 19 26 24 33 29 40

mΩ

35 70 14

⎯

-0.7 -1.0 V

VDS = VGS, ID = -250μA

= -4.5V, ID = -6.4A

VGS = -2.5V, ID = -4.8A VGS = -1.8V, ID = -2.5A VGS = -1.5V, ID = -1.5A V

= -5V, ID = -4A

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Guaranteed by design. Not subject to production testing.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

6. Short duration pulse test used to minimize self-heating effect

DMP2039UFDE4

Document number: DS35675 Rev. 3 - 2

⎯

iss

⎯

oss

rss

R Q

D(on

D(off

⎯

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2530

203 177

9.1

28.2

48.7

3.2

5.0

15.1

23.5

137.6

⎯

⎯ ⎯

pF pF pF

⎯ Ω

⎯

= -15V, VGS = 0V

f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz

= -15V, ID = -4.0A

= -15V, VGS = -4.5V, RG = 1Ω,

= -4.0A

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CUR

RENT

RAIN CUR

REN

R,DR

OUR

ON-R

OUR

ON-R

OUR

CE ON-R

TANC

V = 2.5VGS

V = 8.0VGS

V = 4.5VGS

V = -5.0V

DMP2039UFDE4

(A)

V = 2.0VGS

V = 1.8VGS

V = 1.5VGS

(A)

AIN

-I , D 4

0123 45

-V , DRAIN -SOURCE VOLTAGE(V)

V = 1.2VGS

Fig. 1 Typical Output Ch ar acteristics

0.06

0.05

ESISTANCE( )

0.04

0.03

-I , D

T = 150C

T = 125C

T = 85C

T = 25C

T = -55C

0 0.5 1.0 1.5 2.0 2.5 3.0

-V , GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

0.04

V= -4.5V

T = 150C

T = 125C

T = 85C

T = 25C

ESISTANCE( )

0.03

0.02

T = -55C

0.02

AIN-S

0.01

DS(ON)

12345678910

-I , DRAIN SOURCE CURRENT

Fig. 3 Typical On-Resistance vs.

Drain Curr ent and G at e Vol tage

1.7

AIN-S

0.01

, D

DS(ON)

048121620

-I , DRAIN SOURCE CURRENT (A)

Fig. 4 Typical On-Resistance vs.

Drain Curr ent and Tempera tu r e

0.06

1.5

E ( )

0.05

1.3

1.1

AIN-S

0.04

ESIS

V=5V

-2.

I= A

-5

0.03

, D

V= -4.5V

0.9

DS(ON)

ON-RESISTA N CE (Normalized)

0.7

0.5

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Fig. 5 On-Resistance Variation with Temperature

DMP2039UFDE4

Document number: DS35675 Rev. 3 - 2

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0.02

AIN-S , D

0.01

DS(on)

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Fig. 6 On-Resistance Variation with Temperature

I= A

-10

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RESH

OUR

CE CUR

RENT

UNC

TION CAPACITANC

GE CUR

RENT

OUR

OLT

1.4

1.2

E(V)

LTA

1.0

LD V

0.8

20 18

(A)

14 12

DMP2039UFDE4

0.6

0.4

ATE T

0.2

GS(TH)

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Fig. 7 Gat e Threshold Variation vs. Ambient Temperatur e

8 6

-I , S

4 2

0.4 0.6 0.8 1.0 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Dio de Forwar d Voltag e vs . C ur r e nt

100,000

f = 1MHz

)

E (p

iss

(nA)

10,000

T = 150°C

T = 125°C

P = 100µs

T = 85°C

T = 25°C

P = 10sWµ

March 2012

1,000

100

oss

, J

0 5 10 15 20

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Junction Capacitance

E (V)

E V

E-S A

-V ,

0 5 10 15 20 25 30 35 40 45 50

Q , TOTAL GATE CHARGE (nC)

Fig. 11 Gate-Ch ar ge Charac t eristics

DMP2039UFDE4

Document number: DS35675 Rev. 3 - 2

rss

DSS

-I , LEAKA

0 5 10 15 20 25

-V , DRAIN-SOURCE VOLTAGE(V)

Fig. 10 Typical Drain-Source Leakage Current vs. Voltage

100

DS(on)

Limited

(A) EN

AIN

T = 150°C

0.1

-I , D

J(max)

T = 25°C

V = -8V

Single Pulse DUT on 1 * MRP Board

0.01

0.01 0.1 1 10 100

P = 10s

P = 1s

P = 100ms

P = 10ms

P = 1ms

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 12 SOA, Safe Operation Area

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T T

HER

TANC

D = 0.7

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

Package Outline Dimensions

Z(3X)

DMP2039UFDE4

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 178°C/W

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIMES (sec)

Fig. 13 Transi ent Therm al Resist ance

X2-DFN2020-6

b(6X)

Dim Min Max Typ

0.40

−

A1 0 0.05 0.03 A3

− −

0.13

b 0.25 0.35 0.30

D 1.95 2.05 2.00

D2 0.85 1.05 0.95

E 1.95 2.05 2.00

E2 1.40 1.60 1.50

− −

0.65

L 0.25 0.35 0.30

L1 1.35 1.45 1.40

− −

0.20

All Dimensions in mm

DMP2039UFDE4

Document number: DS35675 Rev. 3 - 2

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DMP2039UFDE4

Suggested Pad Layout

Dimensions

Value

(in mm)

C 0.650 X 0.400

X1 1.050

X2 1.700

Y 0.500 Y1 1.600 Y2 1.600 Y3 2.300

X (6x)

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

DMP2039UFDE4

Document number: DS35675 Rev. 3 - 2

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