Diodes DMP2039UFDE User Manual

Product Summary

I

D

TA = +25°C

-6.7A

-5.4A

V

R

(BR)DSS

-25V

Package

DS(ON) max

27mΩ @ V

40mΩ @ VGS = -1.8V

= -4.5V

GS

U-DFN2020-6

Type E

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

• Load Switching

• Battery Management Application

• Power Management Functions

ESD PROTECTED

Pin1

U-DFN2020-6

Type E

Bottom View



Green

DMP2039UFDE

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low R

• 0.6mm Profile – Ideal for Low Profile Applications

• PCB Footprint of 4mm

• ESD Protected Gate

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

– Ensures on State Losses are Minimized

DS(ON)

2

Mechanical Data

• Case: U-DFN2020-6 Type E

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Bottom View

Internal Schematic

e3

Gate

Gate
Protection
Diode

Equivalent Circuit

Drain

Source

Ordering Information (Note 4)

Part Number Case Packaging

DMP2039UFDE-7 U-DFN2020-6 Type E 3,000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

P9

YM

DMP2039UFDE

Document number: DS35420 Rev. 5 - 2

P9 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

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© Diodes Incorporated

July 2012

θ

)

g

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -1.8V

Steady

State

t<5s

Steady

State

t<5s

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current

Thermal Characteristics

Characteristic Symbol Value Units

T

= +25°C

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6) Steady state

Operating and Storage Temperature Range

A

TA = +70°C

Steady state

t<5s 104

= +25°C

T

A

TA = +70°C

Steady state

t<5s 42

DMP2039UFDE

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

P

D

R

JA

θ

P

D

R

JA

θ

R

JC

T

J, TSTG

-25 V
±8 V

-6.7

-5.3

-8.3

-6.6

-5.4

-4.3

-6.6

-5.2

A

A

A

A

-60 A

-2.0 A

0.8

1.2

160

2.0

2.9
63

W

°C/W

W

°C/W

10.8 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

DSS
DSS
GSS

-25

⎯ ⎯

⎯ ⎯

⎯ ⎯

-1 µA

±10

V

VGS = 0V, ID = -250µA
VDS = -25V, VGS = 0V

µA

V

= ±8.0V, VDS = 0V

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

| ⎯

fs

⎯

-0.4

⎯
⎯
⎯

⎯

⎯

20 27
24 34
28 40
33 70
16

-0.7 -1.0 V

-1.0 V

VDS = VGS, ID = -250µA
V
V

mΩ

V
V

⎯

S

V
VGS = 0V, IS = -1A

= -4.5V, ID = -6.4A

GS

= -2.5V, ID = -4.8A

GS

= -1.8V, ID = -2.5A

GS

= -1.5V, ID = -1.5A

GS

= -5V, ID = -4A

DS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

⎯

iss

C

⎯

oss

C

⎯

rss

R

⎯
Total Gate Charge (VGS = -4.5V) Qg ⎯
Total Gate Charge (VGS = -8V Qg ⎯
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

8. Guaranteed by design. Not subject to production testing.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect

DMP2039UFDE

Document number: DS35420 Rev. 5 - 2

Q

⎯

s

Q

⎯

d

t

⎯

D(on

t

⎯

t

⎯

D(off

t

⎯

f

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2530

203
177

9.1

28.2

48.7

3.2

5.0

15.1

23.5

137.6

80.5

⎯
⎯
⎯

pF
pF
pF

= -15V, VGS = 0V

V

DS

f = 1.0MHz

⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

nC
nC

VDS = -15V, ID = -4.0A

nC
nC

ns
ns

V

= -15V, VGS = -4.5V, RG = 1Ω,

DD

ns

= -4.0A

I

D

ns

July 2012

© Diodes Incorporated