Diodes DMP2038USS User Manual

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DMP2038USS

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

-20V

38m @ V

56m @ VGS = -2.5V

DS(ON)

max

= -4.5V

TA = +25°C

Description and Applications

This MOSFET has been designed to minimize the on-state

resistance (R

performance, making it ideal for high efficiency power management

NEW PRODUCT

applications.

• Backlighting

• Power Management Functions

• DC-DC Converters



) and yet maintain superior switching

DS(ON)

SO-8

Top View

max

-6.5A

-5.0A



Top View

Pin-Out

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

• Weight: 0.072g (approximate)



Equivalent Circuit



Ordering Information (Note 4)

Part Number Case Packaging

DMP2038USS-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Chengdu A/T Site Shanghai A/T Site

DMP2038USS

Document number: DS36919 Rev. 2 - 2

www.diodes.com

= Manufacturer’s Marking P2038US = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

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DMP2038USS

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 6) Steady State

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

= +25°C

= +70°C

DSS

GSS

-20 V

±8

-6.5

-5.2

-25 A

Maximum Continuous Body Diode Forward Current (Note 6) IS 2 A

Avalanche Current (Note 7) L=0.3mH IAS 13.2 A

Avalanche Energy (Note 7) L=0.3mH EAS 26 mJ

Thermal Characteristics

NEW PRODUCT

Characteristic Symbol Value Unit

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

J, TSTG

2.5 W

50 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

DSS

⎯ ⎯

DSS

GSS

-20

⎯ ⎯

-1 µA

±100

VGS = ±8V, VDS = 0V

= 0V, ID = -250µA

= -16V, VGS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

DS(ON)

GS(th)

⎯

-0.4

⎯

24 38

33 56

-0.7 -1.2 V

-1.1 V

mΩ

VGS = 0V, IS = -2.1A

= VGS, ID = -250µA

= -4.5V, ID = -5A

= -2.5V, ID = -4.3A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

7. I

and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

⎯

iss

oss

⎯

rss

⎯

D(on)

⎯

D(off)

⎯

1496

130

116

14.4

2.6

2.7

13.7

14.0

79.1

35.5

⎯

= -15V, VGS = 0V

f = 1.0MHz

= -10V, VGS = -4.5V

= -4.5A

= -10V, VGS = -4.5V,

= 6, RL = 10, ID = -1A

DMP2038USS

Document number: DS36919 Rev. 2 - 2

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RAIN CUR

CUR

RENT

OUR

ON-R

OUR

ON-R

OUR

N-SOUR

CE O

NEW PRODUCT

DMP2038USS

V = -4.5V

V = -3.5V

V = -3.0V

(A)

V = -2.5V

V = -1.5V

-I , D

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-V , DRAIN -SOURCE VOLTAGE (V)

Figure 1 Typical Output Char acteristics

0.08

V = -2.0V

V = -1.8V

V = -1.2V

V= -5.0V

(A)

AIN

-I , D

0.05

T = 150CA°

T = 125CA°

T = 85CA°

T = 25CA°

T = -55CA°

0.5 1 1.5 2 2.5 3

-V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

V= -10V

T = 125 CA°

T = 150 CA°

0.04

0.06

ESISTANCE ( )

0.04

V = -1.8V

V = -2.5V

V = -4.5V

ESISTANCE ( )

0.03

0.02

T = 25CA°

T = 85CA°

T = -55CA°

AIN-S

0.02

, D

DS(ON)

-I , DRAIN SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.7

V = -4.5V

I = -5A

1.5

1.3

AIN-S

1.1

, D

0.9

DS(ON)

ON-RESISTANCE (NORMALIZED)

0.7

0.5

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J°

Figure 5 On-Resistance Variation with Temperature

V = -10V

I = -10A

AIN-S

0.01

, D

DS(ON)

0 5 10 15 20

-I , DRAIN SOURCE CURRENT (A)

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.06

E ( )

0.05

V=5V

-4.

I= A

ESIS

0.04

0.03

-5

V= -10V

I= A

-10

0.02

, D

0.01

DS(on)

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J°

Figure 6 On-Resistance Variation with Temperature

DMP2038USS

Document number: DS36919 Rev. 2 - 2

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GATE THRESH

OLTAG

OUR

CE CUR

UNC

TION CAPACITANC

GAT

OUR

OLTAG

RAN

SIS

NEW PRODUCT

1.2

E (V)

0.8

-I = 1mAD

LD V

-I = 250µA

0.6

0.4

0.2

GS(TH)

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

10000

)

E (p

f = 1MHz

DMP2038USS

(A)

-I , S 4

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

E (V)

T= 25CA°

, J

1000

100

iss

rss

-V , DRAIN-SOURCE VOLTAGE (V)

oss

Figure 9 Typical Junction Capacitance

D = 0.9

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

MAL

D = 0.05

T T

D = 0.02

0.01

D = 0.01

E V

V = -10V

I = -4.5A

E-S

-V ,

-20-16-12-8-40

0 2 4 6 8 10 12 14 16 18

Q , TOTAL GATE CHARGE (nC)

Figure 10 Gate-Charge Characteristics

D = 0.005

r(t), T

Single Pulse

R (t) = r(t) * R

θθ

JA JA

R = 216°C/W

Duty Cycle, D = t1/ t2

0.001

t1, PULSE DURATION TIMES (sec)

Figure 11 Transient Thermal Resistance

DMP2038USS

Document number: DS36919 Rev. 2 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

NEW PRODUCT

Detail ‘A’

0.254 Gauge Plane

Seating Plane

7°~9

Suggested Pad Layout

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

DMP2038USS

Document number: DS36919 Rev. 2 - 2

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www.diodes.com

Detail ‘A’

Dimensions Value (in mm)

X 0.60

Y 1.55 C1 5.4 C2 1.27

DMP2038USS

Dim Min Max

SO-8

A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25

b 0.3 0.5 D 4.85 4.95 E 5.90 6.10

E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

0° 8°

All Dimensions in mm

April 2014

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

NEW PRODUCT

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMP2038USS

Document number: DS36919 Rev. 2 - 2

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Diodes DMP2038USS User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual