Diodes DMP2038USS User Manual

DMP2038USS

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

R

(BR)DSS

-20V

38m @ V

56m @ VGS = -2.5V

DS(ON)

max

= -4.5V

GS

TA = +25°C

Description and Applications

This MOSFET has been designed to minimize the on-state

resistance (R

performance, making it ideal for high efficiency power management

NEW PRODUCT

applications.

• Backlighting

• Power Management Functions

• DC-DC Converters



) and yet maintain superior switching

DS(ON)

SO-8

S

S

G

Top View

I

max

D

-6.5A

-5.0A



Top View

Pin-Out

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

• Weight: 0.072g (approximate)





DS

D

D





D

D

G

Equivalent Circuit

S





Ordering Information (Note 4)

Part Number Case Packaging

DMP2038USS-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Chengdu A/T Site Shanghai A/T Site

DMP2038USS

Document number: DS36919 Rev. 2 - 2

www.diodes.com

= Manufacturer’s Marking
P2038US = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

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April 2014

© Diodes Incorporated

DMP2038USS

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 6) Steady
State

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

= +25°C

T

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

DM

-20 V

±8

-6.5

-5.2

V

A

-25 A

Maximum Continuous Body Diode Forward Current (Note 6) IS 2 A

Avalanche Current (Note 7) L=0.3mH IAS 13.2 A

Avalanche Energy (Note 7) L=0.3mH EAS 26 mJ

Thermal Characteristics

NEW PRODUCT

Characteristic Symbol Value Unit

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

P

R

T

J, TSTG

D

JA

θ

2.5 W

50 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

DSS

I

⎯ ⎯

DSS

I

GSS

-20

⎯ ⎯

⎯ ⎯

-1 µA

±100

V

V

GS

V

DS

nA

VGS = ±8V, VDS = 0V

= 0V, ID = -250µA

= -16V, VGS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

R

DS(ON)

V

GS(th)

SD

⎯

-0.4

⎯

⎯

⎯

24 38

33 56

-0.7 -1.2 V

-1.1 V

mΩ

V

V

V

VGS = 0V, IS = -2.1A

= VGS, ID = -250µA

DS

= -4.5V, ID = -5A

GS

= -2.5V, ID = -4.3A

GS

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

7. I

and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C

AS

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

C

⎯

iss

C

oss

C

⎯

rss

Q

⎯

g

Q

gs

Q

⎯

gd

t

⎯

D(on)

t

r

t

⎯

D(off)

t

⎯

f

⎯

⎯

⎯

1496

130

116

14.4

2.6

2.7

13.7

14.0

79.1

35.5

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

pF

pF

pF

nC

ns

= -15V, VGS = 0V

V

DS

f = 1.0MHz

V

= -10V, VGS = -4.5V

DS

= -4.5A

I

D

V

= -10V, VGS = -4.5V,

DD

= 6, RL = 10, ID = -1A

R

G

DMP2038USS

Document number: DS36919 Rev. 2 - 2

2 of 6

www.diodes.com

April 2014

© Diodes Incorporated