Diodes DMP2035UVT User Manual

Product Summary

I

V

R

(BR)DSS

-20V

35mΩ @ V
45mΩ @ VGS = -2.5V

DS(on) max

= -4.5V

GS

D

TA = 25°C

-6.0A

-5.2A

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• DC-DC Converters

• Motor Control

• Power management functions

• Analog Switch

ESD PROTECTED TO 3kV

) and yet maintain superior switching

DS(on)

Top View Top View

TSOT26

DMP2035UVT

-20V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low Input Capacitance

• Low On-Resistance

• Fast Switching Speed

• ESD protected Up To 3KV

• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TSOT26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – MatteTin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.0013 grams (approximate)

Drain

1

DD

2

DD

GS

3

Pin-Out

6

5

4

Gate

Gate
Protection
Diode

Equivalent Circuit

Source

Ordering Information (Note 3)

Part Number Case Packaging

DMP2035UVT-7 TSOT26 3,000/Tape & Reel

DMP2035UVT-13 TSOT26 10,000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP2035UVT

Document number: DS35190 Rev. 5 - 2

20P = Product Type Marking Code

20P

YM = Date Code Marking
Y = Year (ex: Y = 2011)

YM

M = Month (ex: 9 = September)

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www.diodes.com

March 2012

© Diodes Incorporated

θ

)

g

g

g

)

r

)

r

r

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Steady

Continuous Drain Current (Note 5) VGS = -4.5V

State

t<10s

Steady

Continuous Drain Current (Note 5) VGS = -2.5V

State
t<10s

Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

DMP2035UVT

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

S

I

DM

P

Steady State

t<10s 74

Steady State

t<10s 46

Steady State

R

P
R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

-20 V

±12 V

-6.0

-4.8

-7.2

-5.7

-5.2

-4.1

-6.2

-4.9

A

A

A

A

-2.0 A

-24 A

1.2 W

106

°C/W

2.0 W
65

°C/W

11.8

-55 to 150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-20

⎯ ⎯
⎯ ⎯
⎯ ⎯

-1 µA

±10

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage
Gate Threshold Voltage Temperature Coefficient

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 5)

△V

V

GS(th)

R

GS(th

DS (ON)

|Y

| ⎯

fs

V

SD

-0.4 -0.7 -1.5 V

/△T

⎯

J

⎯
⎯

⎯

⎯

2.5

⎯
23 35
30 45
41 62
18

⎯

-0.7 -1.0 V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

C

⎯

iss

C

⎯

oss

C

⎯

rss

R

⎯

G

Q

⎯

Q

⎯

s

Q

⎯

d

t

⎯

D(on

t

⎯

t

⎯

D(off

t

⎯

f

t

⎯

r

Q

⎯

r

1610 2400

157 210
145 200

9.4 14.1

15.4 23.1

2.5

3.3

⎯

⎯

17 33
12 19
94 150
42 64
14 25 ns

4 8 nC

V

VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V

µA

V

= ±8V, VDS = 0V

GS

VDS = VGS, ID = -250μA

mV/°C

mΩ

ID = -250μA , Referenced to 25°C
V

= -4.5V, ID = -4.0A

GS

= -2.5V, ID = -4.0A

V

GS

= -1.8V, ID = -2.0A

V

S

GS

V

= -5V, ID = -5.5A

DS

VGS = 0V, IS = -1A

= -10V, VGS = 0V

V

pF

DS

f = 1.0MHz

Ω VDS = 0V, VGS = 0V, f = 1.0MHz

= -10V, VGS = -4.5V

V

nC

ns

DS

I

= -4A

D

= -4.5V, VDS = -10V, RG = 6Ω,

V

GS

= -1A, RL = 10Ω

I

D

I

=-4.5A, di/dt=100A/µS

F

DMP2035UVT

Document number: DS35190 Rev. 5 - 2

2 of 6

www.diodes.com

March 2012

© Diodes Incorporated