Diodes DMP2035UTS User Manual

Features

• Dual P-Channel MOSFET

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• ESD Protected up to 3kV

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 3kV

TOP VIEW

BOTTOM VIEW

DMP2035UTS

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: TSSOP-8L

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.039 grams (approximate)

D1 D2

1

D S1

2

S1

3

G1

4

Top View

Pin Configuration

G1

8

D S2

7

S2

G2

6 5

S1 S2

G2

Internal Schematic

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit Drain-Source Voltage Gate-Source Voltage

T

Continuous Drain Current (Note 3)

Steady

State

= 25°C

A

T

= 85°C

A

Pulsed Drain Current (Note 4)

Thermal Characteristics

Power Dissipation (Note 3)

Thermal Resistance, Junction to Ambient @TA = 25°C R Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 substrate PC board with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

DMP2035UTS

Document number: DS31940 Rev. 3 - 2

Characteristic Symbol Value Unit

T

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V

DSS

V

GSS

I

D

I

DM

P

D

JA

, T

J

STG

-20 V ±8 V

6.04

3.96

A

22 A

0.89 W

142.7 °C/W

-55 to +150 °C

January 2010

)

g

r

R

N CUR

R

N

T

R

C

URR

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diodes Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance

NEW PRODUCT

Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effects.

6. Guaranteed by design. Not subject to production testing.

30

V = 8.0V

GS

25

(A)

20

E

V = 4.5V

GS

V = 3.0V

GS

V = 2.5V

GS

V = 2.0V

GS

BV

I

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y V

C C C

R

Q Q Q

t

D(on)

t

D(off)

DSS

fs

SD

iss

oss

rss

t

f

-20 - - V

- - -1.0 A

- - ±10

-0.4 -0.7 -1.0 V 23

-

30 41

|

s d

- 14 - S

- -0.7 -1.0 V

-

1610

-

157

-

145

-

9.45

-

15.4

-

2.5

-

3.3

- 16.8 - ns

- 12.4 - ns

- 94.1 - ns

- 42.4 - ns

20

V = 5V

DS

16

(A) EN

12

35 45 62

DMP2035UTS

VGS = 0V, ID = -250A VDS = -20V, VGS = 0V

μA

VGS = ±8V, VDS = 0V

VDS = VGS, ID = -250A V

= -4.5V, ID = -4.0A

m

-

pF pF pF



nC nC nC

GS

VGS = -2.5V, ID = -4.0A VGS = -1.8V, ID = -2.0A VDS = -5V, ID = -4A Is = -1A, VGS = 0V

= -10V, VGS = 0V,

V

DS

f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz

V

= -4.5V, VDS = -10V,

GS

I

= -4A

D

V

= -10V, VGS = -4.5V,

DS

= 10, RG = 6.0, ID = -1A

R

L

15

8

AI

D

I, D

10

V = 1.5V

GS

5

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN-SOURCE VOLT AGE (V)

DS

Fig. 1 Typical Output Ch ar acteristic s

AIN

D

I, D

4

0

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0 0.5 1 1.5 2 2.5 3

V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

DMP2035UTS

Document number: DS31940 Rev. 3 - 2

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January 2010

R

OUR

CE ON-R

TANC

R

RAIN-SO

URCE O

N-R

TAN

C

R

OUR

CE ON-R

TANC

G

T

THR

H

O

OLTAG

OUR

C

CUR

RENT

NEW PRODUCT

DMP2035UTS

Ω

E ( )

ESIS

0.10

0.08

0.06

Ω

E ( )

0.05

0.04

ESIS

V= 4.5V

GS

T = 125°C

A

T = 150°C

A

0.03

T = 85°C

0.04

AIN-S

0.02

, D

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)

D

V= 1.8V

GS

V = 2.5V

GS

V = 4.5V

GS

Fig. 3 Typical On-Resistance

vs. Drain C urrent an d G at e Vol tage

1.6

0.02

0.01

, D

DS(ON)

0

048121620

I , DRAIN CURRENT (A)

D

Fig. 4 Typical Drain-Source On- R esistanc e

0.06

Ω

vs. Drain Current and Temperature

A

T = 25°C

A

T = -55°C

A

E ( )

1.4

0.05

ESIS

1.2

V = 4.5V

GS

I = 10A

1.0

D

DS(ON)

R , DRAIN-SOURCE

0.8

ON-RESISTANCE (NORMALIZED)

V = 2.5V

GS

I = 5A

D

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Fig. 5 On-Resistance Variation with Temperature

1.2

E (V)

1.0

0.8

I = 1mA

LD V

ES

0.6

I = 250µA

D

0.04

0.03

0.02

AIN-S , D

0.01

DS(ON)

0

-50 -25 0 25 50 75 100 125 150

Fig. 6 On- Resistance Variati on with Tempera t ur e

20

16

(A)

12

E

V = 2.5V

GS

I = 5A

D

V = 4.5V

GS

I = 10A

D

T , JUNCTION TEMPERA TURE (°C)

J

T = 25°C

A

8

E

0.4

A

S

I, S

0.2

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gat e Threshold V a r ia ti on vs. Ambient Temper at ur e

4

0

0.2

0 0.4 0.6 0.8 1.0 1.2 1.4

V , SOURCE-DRAIN VOLT AGE (V)

SD

Fig. 8 Dio de Forwar d Voltag e vs. Curre nt

DMP2035UTS

Document number: DS31940 Rev. 3 - 2

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January 2010

R

OUR

C

G

CUR

RENT

GE CUR

R

T

GE CUR

REN

T

P, P

T

RAN

N

T P

OWER

T

R

T

HER

R

TANC

NEW PRODUCT

DMP2035UTS

100,000

10,000

(nA )

10,000

E

E LEAKA

AIN-S

DSS

I, D

10,000

1,000

(nA)

T = 150°C

A

T = 125°C

1,000

100

10

1

0 2 4 6 8 101214161820

V , DRAIN-SOURCE VOLT AGE (V)

DS

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 9 Typical Drain-Source Leakage Current

vs. Drain-S ource Voltag e

T = 150°C

A

T = 125°C

A

1,000

(nA) EN

100

10

GSS

I , LEAKA

1

12345678

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 10 Leakage Current vs. Gate-Source Voltage

100

90

(W)

80 70

T = 125°C

A

T = 150°C

A

T = -55°C

A

T = 85°C

A

T = 25°C

A

Single Pulse

R = 143°C/W

θθJA

R (t) = r(t) *

θ

JA

T - T = P * R (t)

JA JA

R

θ

JA

60

GSS

I , LEAKA

100

10

T = 25°C

T = -55°C

A

T = 85°C

A

50

SIE

40 30

EAK

20

(PK)

10

1

12345678

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 11 Leakage Current vs. G at e-Source Volta ge

0

0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURA TION TIME (s)

Fig. 12 Single Pulse Maximum Power Dissipation

1

E

ESIS

MAL

ANSIEN

r(t),

D = 0.7 D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.05

D = 0.02

0.01

D = 0.01

D = 0.005

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

D = 0.9

t , PULSE DURA TION TIME (s)

1

R (t) = r(t) *

θ

JA

R = 143°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

Fig. 13 Transient Thermal Response

DMP2035UTS

Document number: DS31940 Rev. 3 - 2

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January 2010

Ordering Information (Note 7)

Part Number Case Packaging

DMP2035UTS-13 TSSOP-8L 2500 / Tape & Reel

Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

8

5

NEW PRODUCT

P2035U

YY WW

1

Top View

4

Package Outline Dimensions

D

E

E1

See Detail C

e

A

b

A2

D

A1

c

Gauge plane

a

L

Detail C

Suggested Pad Layout

Y

X

C3 C1

C2

G

DMP2035UTS

Document number: DS31940 Rev. 3 - 2

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Logo

Part no

Xth week: 01~52

Year: “09” = 2009

TSSOP-8L

Dim Min Max Typ

a 0.09 A

−

A1 0.05 0.15 A2 0.825 1.025 0.925

b 0.19 0.30 c 0.09 0.20 D 2.90 3.10 3.025 e

− −

E

− −

E1 4.30 4.50 4.425

L 0.45 0.75 0.60 All Dimensions in mm

Dimensions Value (in mm)

X 0.45

Y 1.78 C1 7.72 C2 0.65 C3 4.16

G 0.20

− −

1.20

−

0.65

6.40

DMP2035UTS

January 2010

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

NEW PRODUCT

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMP2035UTS

Document number: DS31940 Rev. 3 - 2

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January 2010