Diodes DMP2035UTS User Manual

Features

• Dual P-Channel MOSFET

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• ESD Protected up to 3kV

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 3kV

TOP VIEW

BOTTOM VIEW

DMP2035UTS

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: TSSOP-8L

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.039 grams (approximate)

D1 D2

1

D
S1

2

S1

3

G1

4

Top View

Pin Configuration

G1

8

D
S2

7

S2

G2

6
5

S1 S2

G2

Internal Schematic

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current (Note 3)

Steady

State

= 25°C

A

T

= 85°C

A

Pulsed Drain Current (Note 4)

Thermal Characteristics

Power Dissipation (Note 3)

Thermal Resistance, Junction to Ambient @TA = 25°C R
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 substrate PC board with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

DMP2035UTS

Document number: DS31940 Rev. 3 - 2

Characteristic Symbol Value Unit

T

1 of 6

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V

DSS

V

GSS

I

D

I

DM

P

D

JA

, T

J

STG

-20 V
±8 V

6.04

3.96

A

22 A

0.89 W

142.7 °C/W

-55 to +150 °C

January 2010

© Diodes Incorporated

)

g

g

g

g

r

R

N CUR

R

N

T

R

C

URR

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diodes Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance

NEW PRODUCT

Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effects.

6. Guaranteed by design. Not subject to production testing.

30

V = 8.0V

GS

25

(A)

20

E

V = 4.5V

GS

V = 3.0V

GS

V = 2.5V

GS

V = 2.0V

GS

BV

I

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y
V

C
C
C

R

Q
Q
Q

t

D(on)

t

D(off)

DSS

fs

SD

iss

oss

rss

t

t

f

-20 - - V

- - -1.0 A

- - ±10

-0.4 -0.7 -1.0 V
23

-

30
41

|

s
d

- 14 - S

- -0.7 -1.0 V

-

1610

-

157

-

145

-

9.45

-

15.4

-

2.5

-

3.3

- 16.8 - ns

- 12.4 - ns

- 94.1 - ns

- 42.4 - ns

20

V = 5V

DS

16

(A)
EN

12

35
45
62

DMP2035UTS

VGS = 0V, ID = -250A
VDS = -20V, VGS = 0V

μA

VGS = ±8V, VDS = 0V

VDS = VGS, ID = -250A
V

= -4.5V, ID = -4.0A

m

-

-

-

-

-

-

-

pF
pF
pF



nC
nC
nC

GS

VGS = -2.5V, ID = -4.0A
VGS = -1.8V, ID = -2.0A
VDS = -5V, ID = -4A
Is = -1A, VGS = 0V

= -10V, VGS = 0V,

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

V

= -4.5V, VDS = -10V,

GS

I

= -4A

D

V

= -10V, VGS = -4.5V,

DS

= 10, RG = 6.0, ID = -1A

R

L

15

8

AI

D

I, D

10

V = 1.5V

GS

5

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN-SOURCE VOLT AGE (V)

DS

Fig. 1 Typical Output Ch ar acteristic s

AIN

D

I, D

4

0

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0 0.5 1 1.5 2 2.5 3

V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

DMP2035UTS

Document number: DS31940 Rev. 3 - 2

2 of 6

www.diodes.com

January 2010

© Diodes Incorporated