Diodes DMP2035U User Manual

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Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 3KV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 3kV

SOT23

Top View

DMP2035U

P-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.008 grams (approximate)

Drain

Gate

Gate

Protection

Diode

Internal Schematic To

Source



D

G

S

View

Ordering Information (Note 3)

Part Number Case Packaging

DMP2035U-7 SOT23 3000 / 7” Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

MP3

YM

MP3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)

DMP2035U

Document number: DS31830 Rev. 2 - 2

1 of 6

www.diodes.com

December 2011

© Diodes Incorporated

)

g

g

g

g

r

DMP2035U

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4)
Pulsed Drain Current (Note 5)

Steady

State

T

= 25°C

A

T

= 70°C

A

V
V

DSS
GSS

I

I

DM

D

-20 V
±8

-3.6

-2.9

V
A

-24 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4)

NEW PRODUCT

Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range

= 25°C R

A

P

D

θJA

T

, T

J

STG

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

-20 - - V

- - -1.0 μA

- - ±10 μA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

R

DS(ON)

|Y
V

GS(th

fs

SD

-0.4 -0.7 -1.0 V

-

30
41

23

|

- 14 - S

- -0.7 -1.0 V

35
45
62

DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB with 2 oz. Copper and test pulse width t أ10s.

6. Short duration pulse test used to minimize self-heating effect.

5. Repetitive rating, pulse width limited by junction temperature.

DMP2035U

Document number: DS31830 Rev. 2 - 2

C

iss

C

oss

C

rss

R
Q

Q

s

Q

d

t

D(on)

t

t

D(off)

t

f

www.diodes.com

- 1610 -

- 157 -

- 145 -

- 9.45 -

- 15.4 -

- 2.5 -

- 3.3 -

- 16.8 -

- 12.4 -

- 94.1 -

- 42.4 -

2 of 6

0.81 W

153.5 °C/W

-55 to +150 °C

VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V

VDS = VGS, ID = -250μA
V

= -4.5V, ID = -4.0A

mΩ

GS

VGS = -2.5V, ID = -4.0A
VGS = -1.8V, ID = -2.0A
VDS = -5V, ID = -4A
VGS = 0V, IS = -1A

pF

V

= -10V, VGS = 0V

pF
pF
Ω
nC
nC
nC

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

= -4.5V, VDS = -10V,

V

GS

I

= -4A

D

ns
ns
ns

= -10V, VGS = -4.5V,

V

DS

R

= 10Ω, RG = 6.0Ω, ID = -1A

L

ns

December 2011

© Diodes Incorporated