Diodes DMP2033UVT User Manual

Y

Product Summary

I

V

R

(BR)DSS

-20V

65m @V

100m @VGS = -2.5V -3.4A

DS(ON) max

= -4.5V -4.2A

GS

D

TA = +25°C

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(ON)

ideal for high efficiency power management applications.

Applications

• Backlighting

• Power Management Functions

• DC-DC Converters

• Motor Control

DMP2033UVT

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: TSOT26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – MatteTin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.0013 grams (approximate)

e3

ADVANCED INFORMATION

TSOT26

Top View

1

DD

2

DD

GS

3

Top View

Pin-Out

6

5

4

Internal Schematic

Ordering Information (Note 4)

Part Number Case Packaging

DMP2033UVT-7 TSOT26 3000/Tape & Reel

DMP2033UVT -13 TSOT26 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

Shanghai A/T Site

DMP2033UVT

Document number: DS36617 Rev. 2 - 2

20X = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)

YM

Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)

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March 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6)

Steady

State

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

ADVANCED INFORMATION

= +25°C

T

A

T

= +70°C

A

Steady State

Steady State

DMP2033UVT

V

DSS

V

GSS

I

D

I

DM

P

D

R

JA

θ

P

D

R

JA

θ

T

J, TSTG

-20 V

±8 V

-4.2

-3.4

A

-10 A

1.2 W

100 °C/W

1.7 W

74 °C/W

-55 to 150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Source Leakage

BV

DSS

I

GSS

DSS

-20

⎯ ⎯

⎯ ⎯

⎯ ⎯

-1.0 µA

±100 nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS(th)

-0.5 — -0.9 V

45 65

Static Drain-Source On-Resistance

R

DS(ON)

⎯

57 100

80 200

Forward Transfer Admittance

|Y

| ⎯

fs

9

⎯

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

iss

C

⎯

oss

C

⎯

rss

⎯

845

72

63

⎯

⎯

⎯

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

DMP2033UVT

Document number: DS36617 Rev. 2 - 2

Q

⎯

g

Q

⎯

gs

Q

gd

t

D(on)

t

⎯

r

t

D(off)

t

f

⎯

⎯

⎯

⎯

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10.4

1.5

1.9

6.5

13.4

51.5

21.8

⎯

⎯

⎯

⎯

⎯

⎯

⎯

V

VGS = 0V, ID = -250µA

VDS = -20V, VGS = 0V

VGS = ±8V, VDS = 0V

VDS = VGS, ID = -250µA

= -4.5V, ID = -4.2A

V

GS

m

V

= -2.5V, ID = -3.4A

GS

V

= -1.8V, ID = -2A

GS

S

VDS = -5V, ID = -4A

pF

= -15V, VGS = 0V

V

pF

pF

nC

nC

nC

DS

f = 1.0MHz

V

= -4.5V, V

GS

= -3.5A

I

D

ns

ns

ns

= -4V, V

V

DS

R

= 6Ω, ID = -1A

G

ns

= -4V,

DS

= -4.5V,

GS

© Diodes Incorporated

March 2014