Diodes DMP2033UCB9 User Manual

A

NEW PRODUCT

Product Summary

I

V

R

(BR)DSS

-20V

33m @ V

DS(ON)

GS

= -4.5V

D

TA = 25°C

-5.8A

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• Battery Management

• Load Switch

• Battery Protection

ESD PROTECTED TO 3kV

) and yet maintain superior switching

DS(on)

GDS

DDS

DSS

Top-View

Pin Configuration

DMP2033UCB9

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low Qg & Qgd

• Small Footprint 1.5-mm × 1.5-mm

• Gate ESD Protection 3kV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-WLB1515-9

• Terminal Connections: See Diagram Below

• Weight: 0.0018 grams (approximate)

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMP2033UCB9-7 U-WLB1515-9 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP2033UCB9

Document number: DS35904 Rev. 3 - 2

AW
YM

www.diodes.com

W = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

1 of 6

June 2012

© Diodes Incorporated

θ

θ

)

r

r

g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 6) VGS = -4.5V
Pulsed Drain Current

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range

Steady

State

Steady

State

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

P

P
R
R

T

J, TSTG

DMP2033UCB9

V

DSS

V

GSS

I

D

I

D

I

DM

D
D
JA
JA

-55 to +150 °C

-20 V

-6 V

-4.2A

-3.3A

-5.8A

-4.5A

A

A

-30 A

1.0 W

1.8 W

126.8 °C/W
69 °C/W

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current @Tc = 25°C I
Gate-Source Leakage

BV
BV

I

DSS

GSS
DSS
GSS

-20 - - V

-6.1 - - V

- - -1 A

- - -100 nA

VGS = 0V, ID = -250A
IGS = -250A, VDS = 0V
VDS = -16V, VGS = 0V

VGS = -6V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 6)
Reverse Recovery Charge
Reverse Recovery Time

V

GS(th

R

DS (ON)

|Y
V

Q

fs

SD

r

t

r

-0.4 -0.6 -1.1 V
28 33

-

35 45
45 65

|

- 10.8 - S

- -0.7 -1 V

-

-

15
25

VDS = VGS, ID = -250A
V

mΩ

GS

V

GS

V

GS

VDS = -10V, ID = -2A
VGS = 0V, IS = -2A

- nC

- ns

V

dd

di/dt = 200A/s

= -4.5V, ID = -2A
= -2.5V, ID = -2A
= -1.8V, ID = -2A

= -9.5V, IF = -2A,

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Device mounted on FR4 material with 1-inch

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

2

(6.45-cm2), 2-oz. (0.071-mm thick) Cu

DMP2033UCB9

Document number: DS35904 Rev. 3 - 2

C

iss

C

oss

C

rss

R

G

Q

Q

s

Q

d

t

D(on

t

t

D(off

t

f

www.diodes.com

- 382 500 pF

- 204 270 pF

- 86 115 pF

26.1 35

- 5.4 7.0 nC

- 0.7 - nC

- 1.5 - nC

- 8.5 - ns

- 11.8 - ns

- 47 - ns

- 56 - ns

2 of 6

V

= -10V, VGS = 0V,

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz
V

= -4.5V, VDS = -10V,

GS

I

= -2A

D

V

= -10V, VGS = -4.5V,

DD

I

= -2A, RG = 2,

DS

June 2012

© Diodes Incorporated

R

C

URR

T

R

C

URR

T

R

R

OUR

ON-R

R

R

OUR

ON-R

R

RAIN

OUR

C

R

RAIN

O

URCE O

N

R

T

N

C

NEW PRODUCT

20

15

(A)

V= -6.0V

GS

V= -4.5V

GS

V= -2.5V

GS

V= -2.0V

GS

V= -1.8V

GS

EN

(A)
EN

10

8

6

DMP2033UCB9

10

AIN

AIN

D

5

-I , D

V= -1.0V

GS

V= -1.5V

GS

V= -1.2V

GS

0

-V , DRAIN -SOURCE VOLTAGE ( V)

DS

Fig. 1 Typical Output Characteristics

0.10

Ω

0.08

4

D

-I , D
2

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

-V , GATE-SOURCE VOLT A GE (V)

GS

T = 150 C

A

T = 125 C

A

°

°

T = 25C

A

T = -55C

A

Fig. 2 Typical Transfer Characteristics

0.06

Ω

V= -4.5V

0.05

GS

T = 85C

°

A

°

°

ESISTANCE ( )

0.06

V = -1.5V

GS

CE

0.04

AIN-S

0.02

, D

DS(ON)

0

0 5 10 15 20

-I , DRAIN SOURCE CURRENT (A)

D

V = -2.5V

V = -4.5V

Fig. 3 Typical On-Resistance vs.

Drain Curr ent and G at e Vol t age

1.6

1.4

E

1.2

-S

V = -4.5V

1.0

GS

I = -5.0A

D

, D

DS(ON)

T = 150C

°

ESISTANCE ( )

0.04

0.03

CE

GS

GS

0.02

AIN-S
, D

0.01

DS(ON)

0

0 5 10 15 20

-I , DRAIN SOURCE CURRENT (A)

D

A

T = 125C

°

A

T = 85C

°

A

T = 25C

°

A

T = -55C

°

A

Fig. 4 Typical On-Resistance vs.

Drain Curr ent and Tempera tu r e

0.06

Ω

E ( )

0.05

A

ESIS

0.04

-

0.03

-S

0.02

V=5V

-2.

GS

I= A

-1.0

D

V = -4.5V
I= A

GS

-5.0

D

0.8

ON-RESISTA NCE (NORMALIZED)

0.6

V = -2.5V

GS

I = -1.0A

D

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 5 On- R esistan ce Variation with Temperatur e

, D

0.01

DS(on)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 6 On-Resistance Variation with Temperature

°

DMP2033UCB9

Document number: DS35904 Rev. 3 - 2

3 of 6

www.diodes.com

June 2012

© Diodes Incorporated

GATE THRESH

O

OLTAG

OUR

C

C

URR

N

T

C

UNC

TION CAPACITANC

F

GAT

OUR

C

OLTAG

R

CUR

R

T

NEW PRODUCT

DMP2033UCB9

1.2

1.0

E (V)

0.8

20

15

(A)
E

LD V

0.6

0.4

-I = 250µA

D

-I =1mAD

0.2

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

10,000

f = 1MHz

)

E (p

1,000

C

iss

10

E

S

5

-I , S

0

0 0.3 0.6 0.9 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

6

5

E (V)

4

E V

T= 150C

A

T= 125C

°

A

°

V = -10V

DS

I= -2.0A

D

T= 85C

T= 25C

A

T= -55C

°

A

°

A

°

3

C

100

, J

T

10

02468101214161820

-V , DRAIN-SOURCE VOLTAGE (V)

DS

oss

C

rss

Fig. 9 Typica l Junction Ca pacita nce

100

R

DS(on)

Limited

P = 10sWµ

E-S

2

GS

1

-V ,

0

0123456

Q , TOT AL GATE CHARGE (nC)

g

Fig. 10 Gate-Charge Characteristics

10

(A)
EN

DC

1

P = 10s

W

P = 1s

AIN

D

-I , D

0.1

T = 150°C
T = 25°C
Single Pulse

0.01

0.1 1 10 100

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

J(max)
A

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 11 SOA, Safe Operation Area

DMP2033UCB9

Document number: DS35904 Rev. 3 - 2

4 of 6

www.diodes.com

June 2012

© Diodes Incorporated

T

R

T T

H

R

R

TANC

NEW PRODUCT

1

D = 0.7

E

D = 0.5
D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

E

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

Package Outline Dimensions

PIN ID

D

SEATING PLANE

Suggested Pad Layout

DMP2033UCB9

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 140°C/W

θ

JA

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIMES (sec)

Fig. 12 Transi ent Therm al Resis t ance

6X-Ø b

E

e

e

e

e

U-WLB1515-9

Dim Min Max Typ

A - 0.62 ­A2 - 0.36 0.36
A3 0.020 0.030 0.025

b 0.27 0.37 0.32
D 1.47 1.51 1.49
E 1.47 1.51 1.49

e - - 0.50

All Dimensions in mm

A3

A2

A

D

Value

(in mm)

C1

Dimensions

C

C 0.50
C1 1.00
C2 1.00

D 0.25

C

C2

DMP2033UCB9

Document number: DS35904 Rev. 3 - 2

5 of 6

www.diodes.com

June 2012

© Diodes Incorporated

NEW PRODUCT

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

DMP2033UCB9

DMP2033UCB9

Document number: DS35904 Rev. 3 - 2

6 of 6

www.diodes.com

June 2012

© Diodes Incorporated